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insulated gate bipolar transistor with ultrafast soft recovery diode 04/27/04 www.irf.com 1 IRGIB7B60KDPBF e g n-channel c v ces = 600v i c = 8.0a, t c =100c t sc > 10s, t j =150c v ce(on) typ. = 1.8v features ? low vce (on) non punch through igbt technology. ? 10s short circuit capability. ? square rbsoa. ? positive vce (on) temperature coefficient. ? maximum junction temperature rated at 175c. ? lead-free benefits ? benchmark efficiency for motor control. ? rugged transient performance. ? low emi. ? excellent current sharing in parallel operation. to-220ab fullpak absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 12 i c @ t c = 100c continuous collector current 8.0 a i cm pulse collector current (ref.fig.c.t.5) 24 i lm clamped inductive load current 24 i f @ t c = 25c diode continuous forward current 9.0 i f @ t c = 100c diode continuous forward current 6.0 i fm diode maximum forward current 18 v isol rms isolation voltage, terminal to case, t=1 min. 2500 v v ge gate-to-emitter voltage 20 p d @ t c = 25c maximum power dissipation 39 w p d @ t c = 100c maximum power dissipation 20 t j operating junction and -55 to +175 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal / mechanical characteristics parameter min. typ. max. units r jc junction-to-case- igbt ??? ??? 3.8 r jc junction-to-case- diode ??? ??? 6.0 c/w r cs case-to-sink, flat, greased surface ??? 0.50 ??? r ja junction-to-ambient, typical socket mount ??? ??? 62 wt weight ??? 2.0 ??? g pd - 95195
IRGIB7B60KDPBF 2 www.irf.com note to are on page 12 electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig. v (br)ces collector-to-emitter breakdown voltage 600??v v ge = 0v, i c = 500a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ?0.57?v/c v ge = 0v, i c = 1ma (25c-150c) ?1.82.2 i c = 8.0a, v ge = 15v, t j = 25c 5,6,7 v ce(on) collector-to-emitter voltage ? 2.2 2.5 v i c = 8.0a, v ge = 15v, t j = 150c 9,10,11 ?2.32.5 i c = 8.0a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 3.5 4.5 5.5 v v ce = v ge , i c = 250a 9,10,11 ? v ge(th) / ? t j threshold voltage temp. coefficient ? -9.5 ? mv/ c v ce = v ge , i c = 1ma (25c-150c) 12 gfe forward transconductance ? 3.7 ? s v ce = 50v, i c = 8.0a, pw = 80s ?1.0150 v ge = 0v, v ce = 600v i ces zero gate voltage collector current ? 200 500 a v ge = 0v, v ce = 600v, t j = 150c ? 720 1100 v ge = 0v, v ce = 600v, t j = 175c v fm diode forward voltage drop ? 1.25 1.45 v i f = 5.0a, v ge = 0v 8 ? 1.20 1.40 i f = 5.0a, t j = 150c, v ge = 0v ? 1.20 1.30 i f = 5.0a, t j = 175c, v ge = 0v i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v, v ce = 0v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig. q g total gate charge (turn-on) ? 29 44 i c = 8.0a 23 q ge gate-to-emitter charge (turn-on) ? 3.7 5.6 nc v cc = 400v ct1 q gc gate-to-collector charge (turn-on) ? 14 21 v ge = 15v e on turn-on switching loss ? 160 268 i c = 8.0a, v cc = 400v ct4 e off turn-off switching loss ? 160 268 j v ge = 15v, r g = 50 ? , l = 1.1mh e tot total switching loss ? 320 433 t j = 25c t d(on) turn-on delay time ? 23 27 i c = 8.0a, v cc = 400v t r rise time ? 22 26 ns v ge = 15v, r g = 50 ? , l = 1.1mh ct4 t d(off) turn-off delay time ? 140 150 t j = 25c t f fall time ? 32 42 e on turn-on switching loss ? 220 330 i c = 8.0a, v cc = 400v ct4 e off turn-off switching loss ? 270 381 j v ge = 15v, r g = 50 ? , l = 1.1mh 13,15 e tot total switching loss ? 490 711 t j = 150c wf1,wf2 t d(on) turn-on delay time ? 22 27 i c = 8.0a, v cc = 400v 14,16 t r rise time ? 21 25 ns v ge = 15v, r g = 50 ? , l = 1.1mh ct4 t d(off) turn-off delay time ? 180 198 t j = 150c wf1 t f fall time ? 40 56 wf2 l e internal emitter inductance ? 7.5 ? nh measured 5mm from package c ies input capacitance ? 440 660 v ge = 0v c oes output capacitance ? 38 57 pf v cc = 30v 22 c res reverse transfer capacitance ? 16 24 f = 1.0mhz rbsoa reverse bias safe operating area full square t j = 150c, i c = 54a, vp = 600v 4 v cc =500v,v ge = +15v to 0v,r g = 50 ? ct2 scsoa short circuit safe operating area 10 ? ? s t j = 150c, vp = 600v, r g = 100 ? ct3 v cc =360v,v ge = +15v to 0v wf4 i sc (peak) peak short circuit collector current ? 70 ? a wf4 e rec reverse recovery energy of the diode ? 100 133 j t j = 150c 17,18,19 t rr diode reverse recovery time ? 95 120 ns v cc = 400v, i f = 8.0a, l = 1.07mh 20,21 i rr peak reverse recovery current ? 13 17 a v ge = 15v, r g = 50 ? ct4,wf3 q rr diode reverse recovery charge ? 620 800 nc di/dt = 500a/s
IRGIB7B60KDPBF www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c; t j 150c fig. 4 - reverse bias soa t j = 150c; v ge =15v
p tot (w)
i c a)
i c (a)
i c (a)
IRGIB7B60KDPBF 4 www.irf.com fig. 8 - typ. diode forward characteristics tp = 80s fig. 7 - typ. igbt output characteristics t j = 150c; tp = 80s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80s fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80s
i ce (a)
i ce (a)
i ce (a)
i f (a)
IRGIB7B60KDPBF www.irf.com 5 fig. 10 - typical v ce vs. v ge t j = 25c fig. 9 - typical v ce vs. v ge t j = -40c fig. 12 - typ. transfer characteristics v ce = 360v; tp = 10s fig. 11 - typical v ce vs. v ge t j = 150c
i ce (a)
v ce (v)
v ce (v)
v ce (v)
IRGIB7B60KDPBF 6 www.irf.com fig. 14 - typ. switching time vs. i c t j = 150c; l=1.1mh; v ce = 400v r g = 50 ? ; v ge = 15v fig. 13 - typ. energy loss vs. i c t j = 150c; l=1.1mh; v ce = 400v, r g = 50 ? ; v ge = 15v
energy (j) fig. 16 - typ. switching time vs. r g t j = 150c; l=1.1mh; v ce = 400v i ce = 8.0a; v ge = 15v
? swiching time (ns) ! ! fig. 15 - typ. energy loss vs. r g t j = 150c; l=1.1mh; v ce = 400v i ce = 8.0a; v ge = 15v
? " energy (j)
swiching time (ns) ! !
IRGIB7B60KDPBF www.irf.com 7 fig. 17 - typical diode i rr vs. i f t j = 150c fig. 18 - typical diode i rr vs. r g t j = 150c; i f = 8.0a fig. 20 - typical diode q rr v cc = 400v; v ge = 15v;t j = 150c fig. 19 - typical diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 8.0a; t j = 150c
i rr (a) 50 ? ? " ? " ?
?) i rr (a) !# $!
$ i rr (a) " !# $!
$ q rr (nc) 50? 150? " ? 270?
IRGIB7B60KDPBF 8 www.irf.com fig. 21 - typical diode e rr vs. i f t j = 150c fig. 22 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 23 - typical gate charge vs. v ge i ce = 8.0a; l = 600h % &' ()( * +(, - *
. v ge (v)
energy (j) 270? 470? 150 ? ?
capacitance (pf) #* '* ,*
IRGIB7B60KDPBF www.irf.com 9 fig 25. maximum transient thermal impedance, junction-to-case (diode) fig 24. maximum transient thermal impedance, junction-to-case (igbt) &*/ (. - 0)(,10)*0,( #'.
*/ thermal response ( z thjc ) 231432
563212 ' * 7 0 8(/ ', $ 1*(9:1!;< +:/=/ ri (c/w) i (sec) 2.530 0.001 1.354 0.068689 2.114 2.758 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / i / ri = = &*/ (. - 0)(,10)*0,( #'.
*/ thermal response ( z thjc ) 231432
563212 ' *7 0 8(/ ', $ 1*(9:1!;< +:/=/ j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.367 0.000164 0.425 0.000652 1.070 0.081521 1.928 2.124500
IRGIB7B60KDPBF 10 www.irf.com
IRGIB7B60KDPBF www.irf.com 11 -600 -500 -400 -300 -200 -100 0 100 -0.15 -0.05 0.05 0.15 0.25 time (s) v f (v) -20 -15 -10 -5 0 5 10 15 i f (a) peak i rr t rr q rr 10% peak irr fig. wf3- typ. diode recovery waveform @ t j = 150c using fig. ct.4 fig. wf4- typ. s.c waveform @ t c = 150c using fig. ct.3 fig. wf1- typ. turn-off loss waveform @ t j = 150c using fig. ct.4 fig. wf2- typ. turn-on loss waveform @ t j = 150c using fig. ct.4 -200 -100 0 100 200 300 400 500 600 0 0.2 0.4 0.6 0.8 1 time (us) vce (v) -4 -2 0 2 4 6 8 10 12 ice (a) tf eoff loss 90% ice 5% vce 5% ice vce ic e -100 0 100 200 300 400 500 600 0.3 0.5 0.7 0.9 time (us) vc e (v) -4 0 4 8 12 16 20 24 ice (a) eo n loss tr 90% ice 10% ice 5% vce vce ic e 0 50 100 150 200 250 300 350 400 0.00 10.00 20.00 30.00 40.00 50.00 time ( us ) vce (v) 0 20 40 60 80 ice (a)
IRGIB7B60KDPBF 12 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/04 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site. to-220ab fullpak package is not recommended for surface mount application. notes: v cc = 80% (v ces ), v ge = 15v, l = 100h, r g = 50 ?. energy losses include "tail" and diode reverse recovery. to-220 full-pak package outline dimensions are shown in millimeters (inches) to-220 full-pak part marking information with assembly example: t his is an irf i840g lot code 3432 as s emble d on ww 24 1999 in the assembly line "k" part number lot code as s e mb l y international rectifier logo 34 32 924k irfi840g dat e code year 9 = 1999 we e k 24 line k note: "p" in assembly line position indicates "lead-free"
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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