2015. 4. 23 1/8 semiconductor technical data KGF75N60KDB revision no : 1 general description kec field stop trench igbts offer low switching losses, high energy efficiency and short circuit ruggedness. it is designed for applications such as motor control, uninterrupted power supplies(ups), general inverters. features h high speed switching h high ruggedness, temperature stable behavior h short circuit withstand times ! 10us h extremely enhanced avalanche capability maximum rating (ta=25 ? ) *repetitive rating : pulse width limited by max. junction temperature characteristic symbol rating unit collector-emitter voltage v ces 600 v gate-emitter voltage v ges ? 20 v collector current @tc=25 ? i c 100 a @tc=100 ? 75 a pulsed collector current i cm * 225 a diode continuous forward current @tc=100 ? i f 75 a diode maximum forward current i fm 150 a maximum power dissipation @tc=25 ? p d 357 w @tc=100 ? 143 w maximum junction temperature t j 150 ? storage temperature range t stg -55 to + 150 ? characteristic symbol max. unit thermal resistance, junction to case (igbt) r thjc 0.35 ? /w thermal resistance, junction to case (diode) r thjc 0.85 ? /w thermal resistance, junction to ambient r t h ja 40 ? /w thermal characteristic e c g
2015. 4. 23 2/8 KGF75N60KDB revision no : 1 electrical characteristics (ta=25 ? ) marking note 1 : energy loss include tail current and diode reverse recovery. characteristic symbol test condition min. typ. max. unit static collector-emitter breakdown voltage bv ces v ge =0v , i c =250 a 600 - - v collector cut-off current i ces v ge =0v, v ce =600v - - 250 a gate leakage current i ges v ce =0v, v ge = ? 20v - - ? 100 na gate threshold voltage v ge(th) v ge =v ce, i c =7.5ma 5.0 6.0 7.5 v collector-emitter saturation voltage v ce(sat) v ge =15v, i c =75a - 1.55 1.8 v v ge =15v, i c =150a - 2.2 - v v ge =15v, i c =75a, t c = 125 ? - 1.7 - v dynamic total gate charge q g v cc =300v, v ge =15v, i c = 75a - 250 - nc gate-emitter charge q ge - 50 - nc gate-collector charge q gc - 140 - nc turn-on delay time t d(on) v cc =300v, i c =75a, v ge =15v,r g =10 ? inductive load, t c = 25 ? (note 1) - 100 - ns rise time t r - 50 - ns turn-off delay time t d(off) - 230 - ns fall time t f - 45 - ns turn-on switching loss e on - 2.9 3.7 mj turn-off switching loss e off - 2.4 3.2 mj total switching loss e ts - 5.3 6.9 mj turn-on delay time t d(on) v cc =300v, i c =75a, v ge =15v, r g =10 ? inductive load, t c = 125 ? (note 1) - 100 - ns rise time t r - 60 - ns turn-off delay time t d(off) - 240 - ns fall time t f - 50 - ns turn-on switching loss e on - 3.0 - mj turn-off switching loss e off - 2.6 - mj total switching loss e ts - 5.6 - mj input capacitance c ies v ce =30v, v ge =0v, f=1mhz - 5850 7600 pf ouput capacitance c oes - 250 - pf reverse transfer capacitance c res - 80 - pf short circuit withstand time t sc v cc =300v, v ge =15v, t c =100 ? 10 - - s
2015. 4. 23 3/8 KGF75N60KDB revision no : 1 electrical characteristic of diode characteristic symbol test condition min. typ. max. unit diode forward voltage v f i f = 75a t c =25 ? - 1.5 2.1 v t c =125 ? - 1.6 - diode reverse recovery time t rr i f = 75a di/dt = 600a/ s t c =25 ? - 170 - ns t c =125 ? - 230 - diode peak reverse recovery current i rr t c =25 ? - 20 - a t c =125 ? - 21 - diode reverse recovery charge q rr t c =25 ? - 2.0 - c t c =125 ? - 3.0 -
2015. 4. 23 4/8 KGF75N60KDB revision no : 1
2015. 4. 23 5/8 KGF75N60KDB revision no : 1
2015. 4. 23 6/8 KGF75N60KDB revision no : 1
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2015. 4. 23 8/8 KGF75N60KDB revision no : 1
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