KSMD7N60 kersmi electronic co.,ltd. www.kersemi.com 1 description this n-channel mosfets use advanced trench technology and design to provide excellent rds(on) with low gate charge. it can be used in a wide variety of applications. features 1) low gate charge. 2) green device available. 3) advanced high cell denity trench technology for ultra rds(on) 4) excellent package for good heat dissipation. to - 252 absolute maximum ratings t c =25 ,unless otherwise noted symbol parameter ratings units vds drain - source voltage 600 v vgs gate - source voltage 20 v id continuous drain current - 1 7 a continuous drain current - t=100 mj pd power dissipation4 80 w tj, tstg operating and storage junction temperature range - 55 to +150 thermal characteristics bvdss rdson id 600 v 1. 2 7 a 600v n-channel mosfet
ksm d 7n60 kersmi electronic co.,ltd. www.kersemi.com 2 package marking and ordering information part no. marking package ksmd 7 n60 ksmd 7 n60 to - 252 electrical characteristics t c =25 unless otherwise noted s ymbol parameter conditions min typ max units off characteristics bv dss drain - sourtce breakdown voltage v ds =0v,i d =250a a =250a =3.3 drain miller charge =7a,di/dt=100a/s ? ?
ksm d 7n60 kersmi electronic co.,ltd. www.kersemi.com 3 notes: 1. the data tested by surface mounted on a 1 inch fr - 4 board 2oz copper. 2. the data tested by pulse width300us,duty cycle2%
ksm d 7n60 kersmi electronic co.,ltd. www.kersemi.com 4 figure 5 . gate charge characteristics figure 6 . body diode forward voltage variation vs. source current and temperature figure 7. breakdown voltage variation f igure 8 .maximum safe operating area vs. temperature figure 9 . transient thermal response curve
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