http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST2623J -3.0a , -30v , r ds(on) 130 m ? p-channel enhancement mode mosfet 09-sep-2015 rev. a page 1 of 3 b l f h c j d g k a e rohs compliant product a suffix of -c specifies halogen and lead-free description SST2623J utilized advanced processing techniques to achieve the lowest possible on-resistance, extremel y efficient and cost-effectiveness device. the sot-26 package is universally used for all commercial-indu strial applications. features simple drive requirement smaller outline package surface mount package marking package information package mpq leader size sot-26 3k 7 inch absolute maximum ratings ( t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current i d -3 a pulsed drain current 1 i dm -20 a power dissipation 2 p d 0.35 w operating junction and storage temperature range t j , t stg 150, -55~150 c thermal resistance rating maximum junction to ambient r ja 357 c / w sot-26 millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d 1.30 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 2623
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST2623J -3.0a , -30v , r ds(on) 130 m ? p-channel enhancement mode mosfet 09-sep-2015 rev. a page 2 of 3 electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss -30 - - v v gs = 0v, i d = -250 a drain-source leakage current i dss - - -1 a v ds = -30v, v gs = 0v gate-body leakage current i gss - - 100 na v ds = 0v, v gs = 20v gate-threshold voltage v gs(th) -1 - -3 v v ds =v gs , i d = -250 a - - 130 v gs = -10v, i d = -3a drain-source on-resistance 3 r ds(on) - - 180 m v gs = -4.5v, i d = -2a forward transconductance g fs - 2 - s v ds = -5v, i d = -2a diode forward voltage 3 v sd - - -1.2 v i s = -1a, v gs = 0v dynamic 4 input capacitance c iss - 240 - output capacitance c oss - 42 - reverse transfer capacitance c rss - 32 - pf v gs = 0v v ds = -25v, f=1.0mhz source-drain diode 3, 4 turn-on delay time t d(on) - 5 - rise time t r - 6 - turn-off delay time t d(off) - 15 - fall time t f - 3 - ns v dd = -15v, v gs = -10v, r g =3.3 , r d =15 , i d = -1a total gate charge q g - 4.5 - gate-source charge q gs - 0.5 - gate-drain charge q gd - 1.4 - nc v ds = -24v, v gs = -4.5v, i d = -2a notes: 1. pulse width limited by max. junction temperatur e. 2. per element must be exceeded. 3. pulse test : pulse width 300 Q s, duty cycle 2% Q 4. guaranteed by design, not subject to production testing.
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST2623J -3.0a , -30v , r ds(on) 130 m ? p-channel enhancement mode mosfet 09-sep-2015 rev. a page 3 of 3 characteristic curves
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