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zxgd3109n8 document number ds 37178 rev. 1 - 2 1 of 13 www.diodes.com december 2015 ? diodes incorporated zxgd3109n8 synchronous mosfet controller in so - 8 description the zxgd 3109 n8 is intended to drive a mosfet configured as an ideal diode replacement. the device is comprised of a high - voltage detector stage and gate driver. the detector monitors the voltage between the drain and the source of the mosfet , and if this voltage is less than the turn - on threshold voltage of the controller , a positive voltage is applied to the mosfets g ate p in. as the load current decays to zero , and the voltage between the drain and source of the mosfet increases beyond the turn - off threshold value , the mosfet is rapidly turned off. intelligent features of this ic are the minimum off - time (t off ) and minimum on - time (t on ) . t hese features blank et the noise generated during the turn - on and turn - off instances of the power fet . also light load detection (lld) for improved efficiency at light and no load, where synchronous rectification is no more beneficia l. other features include, under v oltage lock o ut (uvlo) and low turn - off threshold voltage for improved efficiency. applications flyback converters in: ? power adaptors ? auxiliary power supplies ? poe power devices resonant converters in : ? high power adaptors ? 85+/90+ compliant atx and server power supplies features ? frequency of operation up to 5 00khz ? suitable for discontinuous conduction mode ( d cm) and critical conduction mode (crcm) ? minimum o n - time and off - time to reduce t urn - on /off o scillations ? intelligent light load detection and sleep mode ? tu rn - o ff propagation delay time of 3 0 n s typically ? drain voltage rating of 200v ? recommended operating voltage from 4.5v up to 12 v ? source and sink current of 2a and 4 a re spectively ? low component count ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3 ) mechanical data ? case: so - 8 ? case m aterial: m olded p lastic . green m olding c ompound . ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish C matte tin plated leads, solderable per mil - std - 202, method 208 ? weight: 0.07 4 grams ( a pproximate) ordering information (note 4 ) product marking reel s ize (inches) tape w idth (mm) quantity per r eel zxgd3109 n8tc zxgd3109 13 12 2 , 500 note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http : //www.diodes.com/products/packages.html . top view pin - out so - 8 top view v cc gnd t on v s v d pgate t off/ e n gate
zxgd3109n8 document number ds 37178 rev. 1 - 2 2 of 13 www.diodes.com december 2015 ? diodes incorporated zxgd3109n8 marking information functional block diagram zxgd = product type marking code, line 1 3109 = product type marking code, line 2 yy = year (ex: 1 5 = 201 5 ) ww = week (01 - 53) zxgd 3109 yy ww
zxgd3109n8 document number ds 37178 rev. 1 - 2 3 of 13 www.diodes.com december 2015 ? diodes incorporated zxgd3109n8 pin descriptions pin number pin name function 1 t on minimum on - time minimum on - time setting pin. connect this pin to g round via r ton resistor. 2 t off/en minimum off - t ime / enable pin this pin combines the functions of setting the programmable minimum off - time as well as acting as the e nable p in. the device enters under v oltage lock o ut (uvlo) mode when v cc falls below the uvlo threshold. at this point , the t off/en p in is internally shorted to g round through a resistor. the internal current source (used for setting t off ) is powered down. once the uvlo threshold is exceeded , the internal resistor is removed a nd the current source is activated. if the voltage applied to the t off/en p in exceeds the v en - on threshold then the device is in active mode. if the voltage drops below the v en - off threshold then the device is in sleep mode. 3 v s source voltage connect this pin to the sou rce of the synchronous mosfet 4 v d drain voltage the pin needs to be connected as closely as possible to the transformer used in the application to minimize the effects of parasitic inductance on the performance of the device. the device requires that v d has a voltage greater than 1.5v , and that the t off timer has expired before the mosfet is able to be activated. once these conditions ar e met , an d the voltage sensed on the v d p in is 150mv lower than the v s p in, the g ate output to the synchronous mosfet will go high and the t on ( minimum on - time ) period is started. the mosfet will remain on for at least the length of the minimum on - time. after the t on period, the mosfet will remain on until the v d to v s voltage has reached the v thoff threshold, at which point the g ate output will go low. i f the v thoff threshold is reached before the t on period has expired, the device will enter the light load mode. under this mode, the mosfet will not be turned on the next switching cycle. the device will come out of light load once the on - time of the synchronous mosfet exceeds the set minimum on - time. 5 pgate protection mosfet gate a 100nf capacitor should be connected between this pin and gnd. 6 gate gate connect gate to the gate of the synchronous mosfet through a small - series resistor using short pc board tracks to achieve optimal switching performance. the g ate output can source > 2a peak source current while turning on the sync mosfet , and can sink > 4a peak current while turning on the sy nc mosfet. 7 gnd ground this is the reference potential for all internal comparators and thresholds. a 10 f decoupling capacitor is required to be place d as close as possible between v cc and g nd p ins . 8 v cc power s upply pin v cc supplies all the internal circuitry of the device. a dc supply is required to be connected to this pin . a 10 f or larger capacitor must be connected between this pin and gnd p in as close as possible. the device will not function until the v cc has risen above the uvlo threshold. the device can safely be turned off by bringing v cc below the uvlo threshold (minus the uvlo threshold hysteresis). if v cc drops below the uvlo threshold (minus uvlo threshold hysteresis), the mosfet is turned off and t he t off/en p in is internally connected to gnd.
zxgd3109n8 document number ds 37178 rev. 1 - 2 4 of 13 www.diodes.com december 2015 ? diodes incorporated zxgd3109n8 absolute maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit supply voltage , r elative to gnd v c c - 0.3 to 15 v drain pin voltage v d - 1 to + 200 v gate output voltage v g 12 v minimum on - time (t off ) pin voltage v toff - 0.3 to 6 v minimum off - time (t on ) pin voltage v ton - 0.3 to 6 v gate driver peak source current i source 5 a gate driver peak sink current i sink 5 a i nput voltage range v s v s - 1 to 1 v thermal characteristics characteristic symbol value unit power dissipation linear derating factor (note 5 ) p d 490 3.92 m w mw/ c (note 6 ) 655 5.24 (note 7 ) 720 5.76 (note 8 ) 785 6.28 thermal resistance, junction to ambient (note 5 ) r ja 255 c /w (note 6 ) 191 (note 7 ) 173 (note 8 ) 159 thermal resistance, junction to lead (note 9 ) r jl 55 c /w ? jc 45 c /w maximum jundtion temperature t j + 150 c storage temperature range t stg - 65 to + 150 esd ratings (note 1 1 ) characteristic symbol value unit jedec class electrostatic discharge - human body model esd hbm 2 ,000 v 1c electrostatic discharge - machine model esd mm 5 00 v c notes: 5 . for a device surface mounted on minimum recommended pad layout fr4 pcb with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady - state condition. 6 . same as note ( 5 ), except p in 8 (v cc ) and p in 7 (gnd) are both connected to separate 5mm x 5mm 1oz copper heatsinks. 7 . same as note ( 6 ), except both heatsinks are 10mm x 10mm. 8 . same as note ( 6 ), except both heatsinks are 15mm x 15mm. 9 . thermal resistance from junction to solder - point at the end of each lead on p in 8 (v cc ) and p in 7 (gnd). 10. thermal resistance from junction to top of the case. 1 1 . refer to jedec specification jesd22 - a114 and jesd22 - a115.
zxgd3109n8 document number ds 37178 rev. 1 - 2 5 of 13 www.diodes.com december 2015 ? diodes incorporated zxgd3109n8 re commended operating conditions symbol parameter min max unit v cc supply v oltage r ange 4.5 12 v v ds voltage c ross d rain and s ource - 1 20 0 f s w switching frequency 20 600 khz t j operating junction t emperature r ange - 40 + 125 c r toff t off resistor value 85 200 k ? r ton t on resistor value 8.25 100 k ? c vcc v cc bypass capacitor 10 thermal derating curve 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 15mm x 15mm 5mm x 5mm minimum layout derating curve junction temperature (c) max power dissipation (w) 10mm x 10mm
zxgd3109n8 document number ds 37178 rev. 1 - 2 6 of 13 www.diodes.com december 2015 ? diodes incorporated zxgd3109n8 electrical characteristics (@ t a = +25c, unless otherwise specified.) symbol parameter condition s min typ max unit icc start supply current ( u nde rv oltage) v cc = 2.6v 160 220 a icc standby supply current ( d isabled) v cc = 5.5v, r en/off = 0? 380 500 v cc = 12v, r en/off = 0? 450 600 icc on supply current ( e nabled) v cc = 5.5v, f sw = 100khz c gate = 0pf 1.5 1.8 ma v cc = 12v, f sw = 100khz c gate = 0pf 1.8 2.3 v cc = 5.5v, f sw = 100khz c gate = 3 , 300pf 3.2 4 v cc = 12v, f sw = 100khz c gate = 3 , 300pf 5 7 v en - on t off/en t urn - on t hreshold , r ising t off/en d riven, v ton > 0.6v 1.31 1.4 1.49 v v en - off t off/en t urn - off t hreshold , f alling t off/en d riven, v ton > 0.2v 0.55 0.6 0.65 i en - start t off/en i nput c urrent ( d isabled) r toff = 50 k ? - 2 3 - 20 - 1 7 a i en - on t off/en i nput c urrent ( e nabled) r toff = 100 k ? - 1 1.5 - 10 - 8.5 under v oltage lockout (uvlo) uvlo th v cc under v oltage lockout threshold rising 2.8 3.0 3.20 v uvlo hys v cc under v oltage lockout t hreshold hysteresis 200 mv mosfet voltage sensing v tharm gate r e - a rming t hreshold v d to gnd, rising - 1.3 1.5 - 1.7 v v thon gate t urn - o n t hreshold (v d - v s ) f alling, v s = 0v - 220 - 150 - 80 mv v thofflv gate t urn - o ff t hreshold (v d - v s ) r ising, v s = 0v, v cc < 4. 3 v - 30 - 20 - 10 mv v thoffhv gate t urn - o ff t hreshold (v d - v s ) r ising, v s = 0v, v cc > 4. 3 v - 10 - 4 - 1 mv t d ( on ) gate turn - on propagation delay from v t h on to gate > 1v 30 52 n s t d ( off ) gate turn - off propagation delay from v thoff to gate < 4v 30 62 n s minimum on - time t on - lr minimum on - time low resistance r ton = 8.25 k ? 0. 2 6 0.34 0. 4 2 s t on - hr minimum on - time high resistance r ton = 100 k ? 2.2 3 3.8 s
zxgd3109n8 document number ds 37178 rev. 1 - 2 7 of 13 www.diodes.com december 2015 ? diodes incorporated zxgd3109n8 electrical characteristics ( continued ) (@ t a = +25c, unless otherwise specified.) minimum off - time t off - l r minimum off - time low r esistance r to ff = 1 00 k ? 1. 2 3 5 s t off - hr minimum off - time high resistance r to ff = 200 k ? 1 5 21 2 5 s t off - lv minimum off - time low voltage v en/toff = 1v 3 s t off - hv minimum off - time high voltage v en/toff = 2v 21 s t off - ov minimum off - time over voltage 2v < v en/toff < v avdd 21 s gate driver r gup gate pull - up resistance enabled i gate = - 100ma 2.3 ? r gdn gate pull - down resistance enabled i gate = 100ma 1.1 i source peak gate source current c gate = 22nf 3 a i sink peak gate sink current c gate = 22nf 4 v ohg gate output high voltage v cc = 5v 4. 7 v v cc = 12 v 9 v olg gate output low voltage v cc = 5 v 0. 3 t f gate gate fall time 4v to 1v, c gate = 3 , 300pf , v cc = 5v 14 42 n s 9 v to 1v, c gate = 3 , 300pf , v cc = 12v 20 42 t r gate gate rise time 1v to 4v, c gate = 3 , 300pf , v cc = 5v 16 42 1v to 10v, c gate = 3 , 300pf , v cc = 12v 20 42 t dis disable delay (note 8) en falling to gate falling 160 exception handling t over over t emperature + 150 c t re c over temperature to r ecover from over t emperature e xception + 125 c
zxgd3109n8 document number ds 37178 rev. 1 - 2 8 of 13 www.diodes.com december 2015 ? diodes incorporated zxgd3109n8 typ ical application circuit + v o u t p w m c o n t r o l l e r c r c m / d c m - v o u t z x g d 3 1 0 9 d r a i n g a t e s o u r c e r t o n r t o f f / e n p g a t e v c c r t o n r t o f f g d s c 1 c 2 s n u b b e r t r a n s f o r m e r s y n c h r o n o u s m o s f e t c p g a t e g n d c p g a t e o f 0 . 1 f m u s t b e c o n n e c t e d c 1 o f > 1 0 f m u s t b e c o n n e c t e d a s c l o s e a s p o s s i b l e t o v c c a n d g r o u n d w i t h m i n i m u m t r a c k l e n g t h z x t r 2 0 1 2 i n g n d o u t c 3 c 3 o f 1 f m u s t b e c o n n e c t e d l e s s t h a n 1 2 v r a i l s c a n b e d i r e c t l y c o n n e c t e d t o t h e v c c . f o r m o r e t h a n 1 2 v o p e r a t i o n , a r e g u l a t o r a r r a n g e m e n t i s s u g g e s t e d i n t h e f i g u r e .
zxgd3109n8 document number ds 37178 rev. 1 - 2 9 of 13 www.diodes.com december 2015 ? diodes incorporated zxgd3109n8 typical performance characteristics figure 1 figure 2 figure 3 figure 4 figure 5 figure 6
zxgd3109n8 document number ds 37178 rev. 1 - 2 10 of 13 www.diodes.com december 2015 ? diodes incorporated zxgd3109n8 typical performance characteristics (continued ) figure 7 figure 8 figure 9 f igure 10 figure 11 figure 1 2
zxgd3109n8 document number ds 37178 rev. 1 - 2 11 of 13 www.diodes.com december 2015 ? diodes incorporated zxgd3109n8 typical performance characteristics (cont .) figure 13 figure 14
zxgd3109n8 document number ds 37178 rev. 1 - 2 12 of 13 www.diodes.com december 2015 ? diodes incorporated zxgd3109n8 package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. note: for high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and c learance distances between device terminals and pcb tracking. so - 8 dim min max a - 1.75 a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h - 0.35 l 0.62 0.82 ? ? all dimensions in mm dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 so - 8 so - 8 x c1 c2 y gauge plane seating plane detail a detail a e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0 . 2 5 4
zxgd3109n8 document number ds 37178 rev. 1 - 2 13 of 13 www.diodes.com december 2015 ? diodes incorporated zxgd3109n8 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or s ystems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com

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