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CS8402 CSCD32H 2N4403 CM400 HC901F EMK12H2 2SJ24 32A31
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  u na. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212 ) 227-600 5 phase control scr 175 amp0n3 a vong* 1200 volts h dia . hol e ww- r -cathod e potentia l re d -gat e whit e cas e numbe r t6 0 nquina l dimension s 1,24 5 / 31.6 2 m m acros s f lats 750-1 6 lin f - 2 a thd . strik e distanc e ? - .6 5 inc h / 1 6 5 m m uin . creepag e distanc e ? .6 5 inc h / 16. 5 u u uin . al l dimension s ar e referenc e 2n3884-2n389 5 (outlin e drawing ) orderin g information : selec t th e complet e si x digi t par t numbe r yo u desir e fro m th e table , i.e . 2n3895isa1200volt , 17 5 amper e phas e contro l scr . typ e 2n388 4 2n388 5 2n388 6 2n388 7 2n388 8 2n388 9 2n389 0 2n389 1 2n389 2 2n389 3 2n389 4 2n389 5 voiuj b v dr m vrr m 5 0 10 0 20 0 30 0 40 0 50 0 60 0 70 0 80 0 90 0 100 0 120 0 curren t 't(? ) 17 5 2n3884-2n389 5 phas e contro l sc r 17 5 ampere s average , 120 0 volt s description : powere x silico n controlle d rectifier s (scr ) ar e designe d fo r phas e contro l applications . thes e ar e all-diffused , compressio n bonde d encapsulate d (cbe ) device s employin g th e field-prove n amplifyin g (di/namic ) gate . features : q lo w on-stat e voltag e d highdi/d t d highdv/d t n hermeti c packagin g d excellen t surg e an d i 2 t rating s applications : n powe r supplie s n batter y charger s d moto r contro l downloaded from: http:///
? otitq m avp telephone : (973 ) 376-292 2 2 0 ster n ave . / 91 ? ? 227-600 5 springfield , ne w jerse y 0708 1 pax . ^ ^ ^ 2n3884-2n3893 phtee control scr 17s amperes average, 1200 volts electrica l an d ttmrma l characteristic * th t cmawma t 2m3fts4-3fl9 5 voltag e mockin g stat e maximum * forwar d leakage , pea k {m m t j - 125*c . vm u = rate d 2 5 m a revers e leakage . pea k i? m t j - 125*c , vhh m = rate d 2 5 m a currantconductin g stat e maximum * pea k on-stat e voltag e vt m u , - 62sa . t j - 25 % 1.5 5 volt s switchin g typica l tum-of f tim e t , i t = 150a . tj ? 125% . 10 0 |ise c dk/d t = . 12.5a/mmc , reappte d dv/d t - mv/ttse c linea r t o 0. 8 vdb m typica l turn-o n tim e u , i t - 100a . v d - 100 v 5 use c min . critica l dv/d t exponentia l t o vm m dv/d t t j - 125 % 30 0 maximu m therma l resistance , junctio n t o cas e rj b .1 3 ?c/wat t cas e t o sink , lubricate d r m .07 5 *c/waf l gatemaximu m p*rameter e gat e curren t t o trigge r ja r t j = 25*c . v 0 = 12 v 15 0 m a gat e voltag e t o trigge r vo t t j = ? 25% . v d - 12 v 3 volt s non-triggerin g gat e voltag e vqq m l = . 125% . v - rate d voh m .1 5 vott a pea k forwar d gat e curren t jo ? 4 ampere s pea k revers e gat e voltag e vqb u 5 volt s qualit y semi-conductor s downloaded from: http:///
d na. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 2m30m-2n3m 5 pfmmcontro/scj ? 175amperes average, 1200 volts absolut e maximu m rating s 2n3u4-3m 5 rm s on-stat e curren t 27 5 ampere s averag e on-stat e curren t 17 5 ampere s pea k one-cycl e surg e (non-repetitive ) on-stat e curren t (60hz ) its m 450 0 arnppfo s pea k one-cyct e surg e (non-repetitive ) on-stat e curren t (sohz ) its m 410 0 ampere s critica l rate-of-ris e o f on-stat e curren t (non-repetitive ) di/d t bo o amperes/u s critica l rate-of-ris e o f on-stat e curren t (repetitive ) di/d t 15 0 amperes/tt a i t (to r fusing) , 8. 3 millisecond s 84,00 0 a 2 se c pea k gat e powe r dissipatio n po u 1 5 watt s averag e gat e powe r dissipatio n watt s storag e temperatur e -4 0 t o 15 0 operatin g temperatur e -4 0 t o 12 5 mountin g torqu e 30 0 in.-to . mountin g torqu e 34 0 kg-c m qualit y semi-conductor s downloaded from: http:///


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