smb plastic-encapsulate diodes hd bk 65 features i o 5a vrrm 40v high surge current capability applications rectifier marking polarity: color band denotes cathode S5LB 1 h igh diode semiconductor smb er notes: thermal resistance from junction to ambient and from junction to lead mounted on p.c.b. with 0.27" x 0.27" (7.0 mm x 7.0 mm) copper pad areas schottky rectifier S5LB item symbol unit conditions repetitive peak reverse voltage v rrm v average forward current i f(av) a 60hz half-sine wave, 5.0 i fsm a 150 junction temperature t j -55~+125 storage temperature t stg 40 resistance load, tl= 60hz half-sine wave,1 cycle, ta=25 surge(non-repetitive)forward current -55~+150 100 max i mum r m s vo ltage v rms v 28 S5LB electrical characteristics (t a =25 unless otherwise specified item symbol unit test condition S5LB peak forward voltage v f v peak reverse current i rrm1 ma v rm =v rrm t a =25 i rrm2 t a =100 20 thermal resistance(typical) r j-a /w between junction and ambient 45 r j-l between junction and lead 8 0.53 =5a t a =25 i f 0.5
7 \ s l f d o & k d u d f w h u l v w l f v 2 igh diode semiconductor ifsm(a) number of cycles fig.2: maximum non-repetitive forward urge current 8.3ms single half sine wave jedec method 1 2 10 20 100 0 150 120 90 60 30 fig.4 typical reverse characteristics voltage(%) ir(ma) t a = 150 c t a = 125 c t a = 25 c 100 10 1 0.1 0.01 0.001 0.0001 10 20 30 40 50 60 70 80 90 100 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0.2 0.5 vf(v) if(a) fig3:instantaneous forward voltage 1.0 10 20 40 5.0 ta=25 0.8 0.9 1.0 0.1 0 60 1.1 1.2 0 50 150 fig.1: forward current derating curve io(a) tl( ) 100 0 25 75 125 5.0 4.0 3.0 2.0 1.0 6.0
3 jshd jshd h igh diode semiconductor dimensions in inches and (millimeters) 0.087 (2.20) 0.071 (1.80) 0.180(4.57) 0.160(4.06) 0.155(3.94) 0.130(3.30) 0.060(1.52) 0.030(0.76) 0.220(5.59) 0.205(5.21) 0.012(0.305) 0.006(0.152) 0.008(0.203)max. 0.096(2.44) 0.084(2.13) 4.26 1.8 smb smb
4 reel taping specifications for surface mount devices-smb h igh diode semiconductor
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