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1011gn - 250e/el /ep datasheet 250w interrogator/transponder gan power transistor and amplifier downloaded from: http:///
250w interrogator/transponder gan power transistor and amplifi er 2 microsemi makes no warranty, representation, or guarantee reg arding the information contained herein or the suitability of it s products and services for any particular purpose, nor does microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. the products sold hereunder and any other produc ts sold by microsemi have been subject to limi ted testing and should not be used in conjunction with mission -c ritical equipment or applications. any performance specifications ar e believed to be reliable but are not verified, and buyer mus t conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end - products. buyer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the buyers responsibilit y to independently determine suitability of any products and to test and verify the same. the information provided by microsemi hereunder is provided as is, where is and with all faults , and the entire risk associated with such information is entirely with the b uyer. microsemi does not grant, explicitly or implicitly, to an y party any patent rights, licenses, or any ot her ip rights, whether with regard to such information itself or anythi ng described by such information. information provided in this document is proprietary to microsemi, and microsemi reserves the right to make any changes to the information in this docu ment or to any products and services at any time without notic e. about microsemi microsemi corporation (nasdaq: mscc) offers a comprehensive por tfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial m arkets. products include high - performance and radiation - hardened analog mixed - signal integrated circuits, fpgas, socs and asics; power management produc ts; timing and synchronization devices and precise time solutions, setting the world's standard for time ; voice processing devices; rf solutions; discrete components ; enterprise storage and communication solutions, security technologies and scalable anti - tamper products; ethernet solutions; power - over - ethernet ics and midspans; as well as custom design capab ilities and services. microsemi is headquartered in aliso vi ejo, calif., and has approximately 4,800 employees globally. learn more at www.microsemi.com . ?2016 microsemi corporation. all rights reserved. microsemi and the microsemi logo are registered trademarks of microsem i corporation. all other trademarks and service marks are the pr operty of their respective owners. microsemi corporate headquarters one enterprise, aliso viejo, ca 92656 usa within the usa: +1 (800) 713 - 4113 outside the usa: +1 (949) 380 - 6100 sales: +1 (949) 380 - 6136 fax: +1 (949) 215 - 4996 e- mail: sales.support@microsemi.com www.microsemi.com downloaded from: http:///
250w interrogator/transponder gan power transistor and amplifi er 3 revision history 1.1 revision 1.0 revision 1.0 was the first publication of this document. downloaded from: http:///
250w interrogator/transponder gan power transistor and amplifi er 4 contents revision history .............................................................................................................................. 3 1.1 revision 1.0 ................................................................................................................................................ 3 2 product overview .................................................................................................................... 7 2.1 applications ............................................................................................................................................... 7 2.1.1 key features ................................................................................................................................ 8 3 electrical specifications ............................................................................................................ 9 3.1 absolute maximum ratings ....................................................................................................................... 9 3.2 electrical characteristics at 25 c ............................................................................................................... 9 3.3 functiona l characteristics at 25 c ............................................................................................................ 9 3.4 typical broadband performance data (32 s, 2% pulsing) ...................................................................... 10 3.5 critical performance at p in = 2.5 w (34 dbm) .......................................................................................... 10 4 transistor impedance information ......................................................................................... 11 5 transistor test information .................................................................................................... 12 5.1 transistor test circuit diagram ................................................................................................................ 12 6 product outline and terminal information ............................................................................ 14 6.1 55 - qq common source package dimensions and terminal information ................................................ 14 6.2 55 - qqp common source package dimensions and terminal information .............................................. 15 6.3 overall pallet dimensions ........................................................................................................................ 16 downloaded from: http:///
250w interrogator/transponder gan power transistor and amplifi er 5 list of figures figure 1 case outlin e 55 - qq common source (0.160" 0.550") ................................................................................ 7 figure 2 case outline 55 - qqp common source (0.160" 0.230") .............................................................................. 7 figure 3 pallet outline 50 in/out (0.600" 1.200" 0.150") ................................................................................. 7 figure 4 typical broadband performance data graphs ............................................................................................. 10 f igure 5 impedance definition ................................................................................................................................... 11 figure 6 transistor test circuit .................................................................................................................................. 12 figure 7 55 - qq package dimensions and terminal information ............................................................................... 14 figure 8 55 - qqp package dimensions and terminal information ............................................................................. 15 figure 9 pallet package dimensions .......................................................................................................................... 16 downloaded from: http:///
250w interrogator/transponder gan power transistor and amplifi er 6 list of tables table 1 absolute maximum ratings ............................................................................................................................ 9 table 2 typical electrical characteristics at 25 c ........................................................................................................ 9 table 3 typical functional characteristics at 25 c ...................................................................................................... 9 table 4 typical broadband performance data (32 s, 2% pulsing) ........................................................................... 10 table 5 critical performance at p in = 2.5 w (34 dbm) ............................................................................................... 10 table 6 component list 1011gn - 250e/el ................................................................................................................. 12 table 7 55 - qq package dimensions .......................................................................................................................... 14 table 8 55 - qqp pa ckage dimensions ........................................................................................................................ 15 downloaded from: http:///
250w interrogator/transponder gan power transistor and amplifi er 7 2 p roduct overview the 1011gn - 250e /e l /ep is an internally matched, common source , class ab, gan on sic hemt transistor /pallet amplifier capable of providing over 20.5 d b typical gain, 250 w of pulsed rf output power under several pulse formats including mode - s elm across the 1030 to 1090 mhz band. the transistor has internal pre - match for optimal performance and is hermetically sealed . a vailable in two package types, both the bolt - down flan ge 55 - qq package and the solder - down earless flange 55 - qqp package , as well as mounted in a 50 in/out pallet, the transistor is designed specifically for iff, mode - s, tcas , and a vionics s econdary r adar applications , and i t utilizes gold metalli zation and eutectic die attach to provide the highest reliability and superior ruggedness. export classification: ear - 99 . figure 1 case outline 55 - qq common source (0.160" 0. 550") figure 2 case outline 55 - qqp common source (0.160" 0.230") figure 3 pallet outline 50 in/out (0.600" 1.200" 0.150") 2.1 applications the 1011gn - 250e and 1011gn - 250el transistors and the 1011gn - 250ep pallet are specifically designed for iff, mode - s, tcas , and a vionics s econdary r adar applications. downloaded from: http:///
250w interrogator/transponder gan power transistor and amplifi er 8 2.1.1 k ey features the following are the key features of the 1011gn - 250e/el e - class earless/eared gan t ransistor: ? 1030 C 1090 mhz, 2 50 w p ulsed o utput p ower, 32 s 2% p ulsing ? common s ource , class ab, 50 v dd b ias voltage ? high efficiency: >70% typical a cross the f requency b and ? extremely compact s ize ? high p ower g ain: 20.5 db t ypical ? excellent g ain f latness: 0.1 db t ypical ? ideal for iff, mode - s, tcas , and a vionics s econdary r adar applications ? utilizes all - gold metallization and eutectic die attach for highest reliability ? 50 in /o ut lumped element , very small footprint , plug -and- play pallets available downloaded from: http:///
250w interrogator/transponder gan power transistor and amplifi er 9 3 e lectrical specifications 3.1 a bsolute max imum ratings the following table shows the absolute maximum ratings at 25 c unless otherwise specified. table 1 absolute maximum ratings rating value units max imum power d issipation device d issipation at 25 c 460 w maximum voltage and cur rent drain - source v oltage (v dss ) 125 v gate - source v oltage (v gs ) C 8 to 0 v maximum t emperatures storage t emperature (t stg ) C 55 to 125 c operating j unction t emperature 200 c 3.2 e lectrical characteristics at 25 c the following table shows the typical electrical characteristics at 25 c. table 2 typical electrical characteristics at 25 c symbol characteristics test conditions min typ max units p out output p ower p in = 2.5 w, freq = 1030, 1090 mhz 250 280 w g p power gain p in = 2.5 w, freq = 1030, 1090 mhz 20 20.5 db ? d drain efficiency p in = 2.5 w, freq = 1030, 1090 mhz 60 75 % dr droop p in = 2.5 w, freq = 1030, 1090 mhz 0.14 0.5 db vswr -t load m ismatch t olerance p out = 250 w, freq = 1030 mhz, 32 s - 2% 5:1 ? jc thermal r esistance 32 s , 2% duty cycle 0.68 c/w bias condition : v dd = +50 v, i dq = 60 ma constant current (v gs = C 2.0 to C 4.5 v typical) 3.3 f unctional characteristics at 25 c table 3 typical functional characteristics at 25 c symbol characteristic test conditions min typ max units i d(off) drain leakage current v gs = C8 v, v d = 125 v 24 ma i g(off) gate leakage current v gs = C8 v, v d = 0 v 8 ma downloaded from: http:///
250w interrogator/transponder gan power transistor and amplifi er 10 3.4 t ypical broadband performance data (32 s, 2% pulsing) table 4 t ypical broadband performance data (32 s, 2% pulsing) frequency p in (w) p out (w) i d (ma) i rl (db) ? d (%) g p (db) droop (db) 1030 mhz 2.5 284 0.20 C8.0 72 20.5 0.12 1090 mhz 2.5 283 0.18 C12.0 78 20.5 0.12 figure 4 typical broadband performance data graphs 3.5 c ritical performance at p in = 2.5 w (34 dbm) table 5 critical performance at p in = 2.5 w (34 dbm) freq (ghz) test condition p o (w) gain (db) eff (%) droop (db) 1.030 32 s C 2% 283 20.5 72 0.12 1.030 128 s C 10% 269 20.3 62 0.30 1.090 32 s C 2% 284 20.5 78 0.12 1.090 128 s C 10% 275 20.7 71 0.30 downloaded from: http:///
250w interrogator/transponder gan power transistor and amplifi er 11 4 t ransistor impedance information the following diagram shows the transistor impedance information for 1011gn - 250 e/el/ep. figure 5 impedance definition input matching network output matching network g s d z s o ur ce z l oad 50 ? 50 ? note : z s o ur ce is looking into the input circuit z l oad is looking into the output circuit for information about source and load impedances for 1011gn - 250 e/el/ep , contact your microsemi representative. downloaded from: http:///
250w interrogator/transponder gan power transistor and amplifi er 12 5 t ransistor test i nformation 5.1 t ransistor test circuit diagram figure 6 transistor test circuit the board material is rogers duroid 6006, 0.250" thickness, and r = 6.15. the following table lists the components for 1011gn - 250 e/el. table 6 component list 1011gn - 250e/el item description value c1 chip capacitor a size C atc 600s series 68 pf c2 chip capacitor a size C atc 600s series 68 pf c3 chip capacitor a size C atc 600s series 9.1 pf c4 chip capacitor a size 470 pf c5 chip capacitor b size 4.7 uf c6 chip capacitor a size C atc 600s series 5.6 pf c7 chip capacitor a size 2 to 2.5 pf c8 chip capacitor a size C atc 600s series 1.2 pf c9 electrolytic capacitor (63 v) 470 uf c10 chip capacitor a size C atc 600s series 6.8 pf c11 chip capacitor a size C atc 600s series 1.2 pf downloaded from: http:///
250w interrogator/transponder gan power transistor and amplifi er 13 item description value r1 chip r esistor size 0805 40.2 r2 chip r esistor size 0805 5.1 l1 chip inductor size 0805 47 nh l2 24 awg cu wire, diameter = 0.07" 1 turn l3 24 awg cu wire, length = 0.280" u shape downloaded from: http:///
250w interrogator/transponder gan power transistor and amplifi er 14 6 p roduct outline and terminal information the 1011gn - 250e transistor is available in the 55 - qqp case outline and the 1011gn - 250el transistor is avail a ble in the 55 - qqp case outline. the 1011gn - 250ep is available in the 90 - 1011 gn - 250ep pallet outline. all three products are configured for common sour ce operation. 6.1 55- qq common source package dimension s and terminal information figure 7 55 - qq package dimensions and terminal information pin 1: drain, pin 2: source, pin 3: gate table 7 55 - qq package dimensions dim millimeter s tol inches tol a 13.970 0.250 0.550 0.010 b 4.570 0.250 0.160 0.010 c 3.860 0.330 0.152 0.013 d 1.270 0.130 0.050 0.005 e 1.020 0.130 0.040 0.005 f 1.700 0.130 0.067 0.005 g 0.130 0.025 0.005 0.001 h 8.130 0.250 0.320 0.010 i 45 5 45 5 j 5.080 0.250 0.200 0.010 k 2.54 dia 0.130 0.100 dia 0.005 l 1.270 0.130 0.050 0.005 m 9.530 0.130 0.375 0.005 downloaded from: http:///
250w interrogator/transponder gan power transistor and amplifi er 15 6.2 55- qqp common source package dimension s and terminal information figure 8 55 - qqp package dimensions and terminal information pin 1: drain, pin 2: source, pin 3: gate table 8 55 - qqp package dimensions dim millimeters tol inches tol a 5.840 0.250 0.230 0.010 b 4.060 0.250 0.160 0.010 c 3.170 0.050 0.125 0.002 d 1.270 0.130 0.050 0.005 e 1.020 0.130 0.040 0.005 f 1.570 0.130 0.062 0.005 g 0.130 0.020 0.005 0.001 h 8.120 0.250 0.320 0.010 i 45 5 45 5 j 5.080 0.250 0.200 0.010 k 1.400 0.130 0.055 0.005 downloaded from: http:///
250w interrogator/transponder gan power transistor and amplifi er 16 6.3 overall pallet dimensions figure 9 pallet package dimensions dimensions 1.200" 0.600" 0.150" downloaded from: http:///

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