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1 / 11 n ??? n - channel mosfet j cs 1 s n6 5 c order codes ? marking ? package halogen free ? packaging d evice w eight jcs1 s n6 5 t c - o - t - n - a jcs1 s n6 5 t c to - 92 no brede 0.216 g(typ) jcs1 s n6 5 v c - o - v - n - b jcs1 s n6 5 v c ipak - s2 no tube 0.35 0 g(typ) jcs1 s n6 5 r c - o - r - n - b jcs1 s n6 5 r c dpak no tube 0.3 00 g(typ) jcs1 s n6 5 r c - o - r - n - a jcs1 s n6 5 r c dpak no brede 0.3 00 g(typ) ? package ? main characteristics i d 0. 6 a to - 92 1. 2 a ipak/dpka v dss 6 5 0 v rdson - m a x vgs=10v 9.5 ? qg - typ 4.5 nc ? ? ??? ? applications ? high efficiency switch mode power supplies ? electronic lamp ballasts based on half bridge ? ? ? ? c rss ( ? 4.9 pf) ? ?? ? ??? ? ? dv/dt ? rohs ? features ? l ow gate charge ? low c rss (typical 4.9 pf ) ? fast switching ? 100% avalanche tested ? improved dv/dt capa bility ? rohs product ? order message to - 92 r
JCS1SN65C 20 1 510b 2 / 11 ?? absolute ratings (tc=25 ) * ?? *drain current limited b y maximum junction temperature ? parameter symbol ? value unit j cs 1 s n6 5 t c j cs 1 s n6 5 v c / r c ???? dss 6 5 0 6 5 0 v ? d t=25 t=100 ? ? 1 drain current - pulse dm 2.0 4.0 a ??? gss 30 v ? ? 2 single pulsed avalanche en ergy as 4 8 mj ? ? 1 avalanche current ar 1.0 a ?? ? 1 ar 3. 6 mj ??? ? 3 peak diode recovery dv/dt ? d t c =25 - derate above 25 ??? j stg - 55 ?? l 300 r
JCS1SN65C 20 1 510b 3 / 11 e lectrical c haracteristics ? parameter symbol tests conditions min typ max units ? off C characteristics ??? drain - source voltage bv dss i d =250 a, v gs =0v 6 5 0 - - v ?? breakdown vol tage temperature coefficient bv dss / t j i d = 1m a, referenced to 25 - 0. 6 0 - v/ ???? zero gate voltage drain current i dss v ds = 6 5 0v,v gs =0v, t c =25 - - 1 0 a v ds = 52 0v, t c =125 - - 1 0 0 a ?? gate - body leakage current, forward i gssf v ds =0v, v gs =30v - - 100 na ?? gate - body leakage current, reverse i gssr v ds =0v, v gs = - 30v - - - 100 na ?? on - characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =250 a 2 .0 - 4 .0 v ?? static drain - source on - resistance r ds(on) v gs =10 v , i d = 0. 6 a - 9.0 9 .5 ? forward transconductance g fs v ds = 4 0v , i d = 0. 6 note 4 - 0.8 - s ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1.0mh z - 247 319 pf output capacitance c oss - 23 30 pf reverse t ransfer capacitance c rss - 4.9 6.4 pf r
JCS1SN65C 20 1 510b 4 / 11 e lectrical c haracteristics switching characteristics ?? turn - on delay time t d (on) v dd = 3 25 v,i d = 1. 2 a,r g =25? note 4 5 - 1 5 45 ns ? turn - on rise time t r - 46 105 ns ?? turn - off delay t ime t d (off) - 26 62 ns ?? turn - off fall time t f - 37 82 ns ? total gate charge q g v ds = 520 v , i d = 1. 2 a v gs =10v note 4 5 - 4.5 4.9 nc ?? gate - source charge q gs - 1. 0 - nc ?? gate - drain charge q gd - 2.5 - nc ????? drain - sour ce diode characteristics and maximum ratings maximum continuous drain - source diode forward current i s - - 1. 2 a maximum pulsed drain - source diode forward current i sm - - 4 . 8 a ? drain - source diode forward voltage v sd v gs =0v, i s = 1. 2 a - - 1. 4 v ?? reverse recovery time t rr v gs =0v, i s = 1. 2 a di f /dt=100a/ s (note 4) - 1 85 - ns ? reverse recovery charge q rr - 0. 51 - c ? parameter symbol max unit jcs 1 s n6 5 t c jcs 1 s n65 v c /r c ??? thermal resistance, junction to case r th(j - c) 4. 7 5 /w ? thermal resistance, junction to ambient r th(j - a) 120 1 0 5 /w ?? 1 ? 2 l= 64 mh, i as = 1.2 a, v dd =50v, r g =25 ?, ? t j =25 3 i sd 1.2 a,di/dt 200a/s,vddbv dss , ? t j =25 4 ? 300s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperatu re 2 l= 64 mh, i as = 1.2 a, v dd =50v, r g =25 ?, starting t j =25 3 i sd 1.2 a,di/dt 200a/s,vddbv dss , starting t j =25 4 pulse test pulse width 300s,duty cycle2 5 essentially independent of operating temperature r
JCS1SN65C 20 1 510b 5 / 11 electrical characteristics (curves) t ransfer characteristics o n - resistance variation vs. drain current and gate voltage b ody diode forward voltage variation vs. s ource current and temperature c apacitance characteristics gate charge characteristics o n - region characteristics r 0.1 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 25 150 v sd [v] i dr [a] 1 10 0.1 1 v gs top 15v 10v 8v 7v 6.5v 6v 5.5v bottom 5v notes 1. 250s pulse test 2. t c =25 i ds (on ) [a] v ds [v] 2 4 6 8 10 0.1 1 10 notes 1.250s pulse test 2.v ds =40v i d [a] v gs [v] 25 150 0.0 0.5 1.0 1.5 6 7 8 9 10 11 12 13 14 note t j =25 v gs =10v r ds (on ) [ ] i d [a] v gs =20v
JCS1SN65C 20 1 510b 6 / 11 electrical characteristics (curves) b reakdown voltage variation vs. temperature o n - resistance variation vs. temperature maximum safe operating area for jcs1sn65tc m aximum drain current vs. case temperature m aximum safe operating ar ea for jcs1sn65vc/rc r -75 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 notes 1. v gs =0v 2. i d =250 ? a bv ds (normalized) t j [ ] 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i d drain current [a] t c case temperature [ ]
JCS1SN65C 20 1 510b 7 / 11 electrical characteristics (curves) transient thermal response curve for jcs1sn65tc transient thermal response curve for jcs1sn65vc/rc notes : 1. z j a (t) = r(t) * r ja 2. duty factor, d=t1/t2 3. t jm C t a = p dm * z j a (t) r 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 5 0.01 0.1 1 0.5 single pulse 0.01 0.02 0.05 0.2 0.1 r(t) (normalized) t1 [ms]
JCS1SN65C 20 1 510b 8 / 11 ? package mechanical data to - 9 2 u nit mm r
JCS1SN65C 20 1 510b 9 / 11 ? package mechanical data ipak s2 u nit mm r
JCS1SN65C 20 1 510b 10 / 11 ? package mechanical data dpak reel u nit mm r
JCS1SN65C 20 1 510b 11 / 11 ? 1. ???? ????? ?????? ???? 2. ????? ?? 3. ????? ?????? 4. ??? note 1. jilin sino - microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please dont be hesitate to contact us. 3. p lease do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino - microelectronics co., ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86 - 432 - 64678411 86 - 432 - 6 4665812 ? www.hwdz.com.cn ? ??? 99 ?? 132013 86 - 432 - 64675588 64675688 6 4678411 : 86 - 432 - 64671533 c ontact jilin sino - microelectronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel 86 - 432 - 6 4678411 fax 86 - 432 - 6 4665812 web site www.hwdz.com.cn m arket d epartment add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86 - 432 - 6 4675588 6 4675688 6 4678411 fax: 86 - 432 - 6 4671533 r

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