low leakage pico amp diodes pad1 / pad2 / PAD5 / pad10 / pad20 / PAD50 features low leakage . . . . . . . . . . . . . . . . . . . . . . . . . 1 pa (pad1) high breakdown range . . . . . . . . . . . . . . . . . . . -45 v min - 120 v max (pad1, 2, 5) . . . . . . . . . . . . . . . . . . . . . . -35v min (pad10, 20, 50, 100) low capacitance . . . . . . . . . . . . . . . . . 0.8 pf (pad1, 2, 5) . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 pf (pad10, 20, 50, 100) applications high impedance protection devices fast diode switching clipping circuits description calogics series of pico amp diodes are an excellent choice for protection devices where ultra low leakage is critical and must be at a minimal measurement. these devices have a wide operating voltage range and are low capacitance for high speed switching requirements. housed in a hermetic to-18 package the product line is also available in chip form for hybrid uses. ordering information part package temperature range pad1-100 hermetic to-18 -55 o c to +150 o c xpad1-100 sorted chips in carriers -55 o c to +150 o c llc pin configuration a c schematic diagram anode cathode bottom view anode cathode case (clipped) 5007
pad1 / pad2 / PAD5 / pad10 / pad20 / PAD50 llc absolute maximum ratings (25 o c) forward current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 ma total device dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mw storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 o c to 125 o c lead temperature (1/16" from case for 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 o c electrical characteristics (25 o c unless otherwise noted) symbol characteristics min typ max unit test conditions static i r reverse current -1 pa vr = -20 v pad1 -2 pad2 -5 PAD5 -10 pad10 -20 pad20 -50 PAD50 -100 pad100 bv r breakdown voltage (reverse) -45 -120 v i r = -1 m a pad1, 2, 5 -35 pad10, 20, 50, 100 v f forward voltage drop 0.8 1.5 i f = 5 ma pad1, 2, 5, 10, 20, 50, 100 dynamic c r capacitance 0.8 pf v r = -5 v, f = 1 mhz pad1, 2, 5 2 pad10, 20, 50, 100 application operational amplifier protection. input differential voltage limited to 0.8 v (typ) by pads d 1 and d 2 common mode input voltage limited by pads d 3 and d 4 to 15 v. typical sample and hold circuit with clipping. pad diodes reduce offset voltages fed capacitively from the fet switch gate. d 1 d 3 d 4 _ + 1 -15v +15v pad10 d 2 i < 1 pa r +v -v v out c control signal e in + pad1 pad1 j110 j210
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