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| savantic semiconductor product specification silicon pnp power transistors BDT92 d escription with to-220c package complement to type bdt91 applications for use in general purpose power amplifier and switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -5 v i c collector current -10 a i b base current -6 a p c collector power dissipation t c . 25 90 w t j junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.39 /w downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors BDT92 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-100ma; i b =0 -60 v v cesat-1 collector-emitter saturation voltage i c =-3 a;i b =-0.3 a -1.1 v v cesat-2 collector-emitter saturation voltage i c =-10 a;i b =-3.3 a -3.0 v v be base-emitter voltage i c =-4a ; v ce =-4v -1.6 v i cbo collector cut-off current v cb =-60v; i e =0 -0.1 ma i ceo collector cut-off current v ce =-30v; i b =0 -1.0 ma i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 ma h fe-1 dc current gain i c =-4a ; v ce =-4v 20 200 h fe-2 dc current gain i c =-10a ; v ce =-4v 5 f t transition frequency i c =-0.5a ; v ce =-10v 4 mhz downloaded from: http:/// savantic semiconductor product specification 3 silicon pnp power transistors BDT92 package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm) downloaded from: http:/// |
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