? IRG7RA13Upbf 1 www.irf.com ? 2012 international rectifier november 5 th , 2012 pdp trench igbt features ? advanced trench igbt technology ? optimized for sustain and energy recovery circuits in pdp applications ? low v ce(on) and energy per pulse (e pulse tm ) for improved panel efficiency ? high repetitive peak current capability ? lead free package e c g n-channel ? d-pak key parameters v ce min 360 v v ce(on) typ. @ i c = 20a 1.42 v i rp max @ t c = 25c 276 a t j max 150 c g c e gate collector emitter description this igbt is specifically designed for applications in plasma display panels. this device utilizes advanced trench igbt technology to achieve low v ce(on) and low e pulse tm rating per silicon area which improve panel efficiency. additional features are 150c operating junction temperature and high repetitiv e peak current capability. these features combine to make this igbt a highly efficient, robust and reliable device for pdp applications. absolute maximum ratings ? parameter max. units v ge gate-to-emitter voltage 30 v i c @ t c = 25c continuous collector current, v ge @ 15v 40 a i c @ t c = 100c continuous collector, v ge @ 15v 20 i rp @ t c = 25c repetitive peak current ? 276 p d @t c = 25c power dissipation 78 w p d @t c = 100c power dissipation 31 linear derating factor 0.63 w/c t j operating junction and -40 to + 150 c t stg storage temperature range soldering temperature for 10 seconds 300 thermal resistance ? parameter typ. max. units r ? jc junction-to-case ? CCC 1.6 c/w r ? ja junction-to-ambient (pcb mount) ? 50 base part number package type standard pack complete part number form quantity IRG7RA13Upbf d-pak tube 75 IRG7RA13Upbf ordering information tape and reel 2000 IRG7RA13Utrpbf tape and reel left 3000 IRG7RA13Utrlpbf tape and reel right 3000 IRG7RA13Utrrpbf g e c downloaded from: http:///
? IRG7RA13Upbf 2 www.irf.com ? 2012 international rectifier november 5 th , 2012 electrical characteristics @ t j = 25c (unless otherwise specified) ? parameter min. typ. max. units conditions bv ces collector-to-emitter breakdown voltage 360 CCC CCC v v ge = 0v, i ce = 250a ? bv ces / ? t j breakdown voltage temp. coefficient CCC 0.4 CCC v/c reference to 25c, i ce = 1ma CCC 1.26 1.52 v ge = 15v, i ce = 12a ? CCC 1.42 CCC v ge = 15v, i ce = 20a ? 1.84 CCC v ge = 15v, i ce = 40a ? CCC 2.25 CCC v ge = 15v, i ce = 60a ? CCC 1.48 CCC v ge = 15v, i ce = 20a, t j = 150c ? v ge(th) gate threshold voltage 2.2 CCC 4.7 v v ce = v ge , i ce = 1.0ma ? v ge(th) / ? t j gate threshold voltage coefficient CCC -10 CCC mv/c CCC 1.0 10 a v ce = 360v, v ge = 0v i ces collector-to-emitter leakage current CCC 25 150 v ce = 360v, v ge = 0v, t j = 125c CCC 75 CCC v ce = 360v, v ge = 0v, t j = 150c i ges gate-to-emitter forward leakage CCC CCC 100 na v ge = 30v gate-to-emitter reverse leakage CCC CCC -100 v ge = -30v g fe forward transconductance CCC 47 CCC s v ce = 25v, i ce = 12a q g total gate charge CCC 33 CCC nc v ce = 240v, i c = 12a, v ge = 15v ? q gc gate-to-collector charge CCC 12 CCC t d(on) turn-on delay time CCC 11 CCC ns i c = 12a, v cc = 196v t r rise time CCC 13 CCC r g = 10 ? , l=210h t d(off) turn-off delay time CCC 75 CCC t j = 25c t f fall time CCC 120 CCC t d(on) turn-on delay time CCC 11 CCC ns i c = 12a, v cc = 196v t r rise time CCC 14 CCC r g = 10 ? , l=200h, l s = 150nh t d(off) turn-off delay time CCC 86 CCC t j = 150c t f fall time CCC 190 CCC t st shoot through blocking time 100 CCC CCC ns v cc = 240v, v ge = 15v, r g = 5.1 ? CCC 480 CCC j l = 220nh, c= 0.20f, v ge = 15v e pulse energy per pulse v cc = 240v, r g = 5.1 ? , t j = 25c ?? CCC 570 CCC l = 220nh, c= 0.20f, v ge = 15v ?? v cc = 240v, r g = 5.1 ? , t j = 100c esd human body model class 1c (per jedec standard jesd22-a114) machine model class b (per eia/jedec stand ard eia/jesd22-a115) c ies input capacitance CCC 880 CCC pf v ge = 0v c oes output capacitance CCC 47 CCC v ce = 30v c res reverse transfer capacitance CCC 26 CCC ? = 1.0mhz l c internal collector inductance CCC 4.5 CCC nh between lead, 6mm (0.25in.) l e internal emitter inductance CCC 7.5 CCC from package and center of die contact v ?v ce(on) ?? ? static collector-to-emitter voltage ? ? notes: ? half sine wave with duty cycle = 0.01, t on = 1.0sec. ? r ? is measured at t j approximately 90c. ? pulse width 400s; duty cycle 2%. ? when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. downloaded from: http:///
? IRG7RA13Upbf 3 www.irf.com ? 2012 international rectifier november 5 th , 2012 fig 1. typical output characteristics @ 25c fig 3. typical output characteristics @ 125c fig 4. typical output characteristics @ 150c fig 5. typical transfer characteristics fig 6. v ce(on) vs. gate voltage 024681 0 v ce (v) 0 40 80 120 160 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v v ge = 6.0v 024681 0 v ce (v) 0 40 80 120 160 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v v ge = 6.0v 024681 0 v ce (v) 0 40 80 120 160 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v v ge = 6.0v fig 2. typical output characteristics @ 75c 024681 0 v ce (v) 0 40 80 120 160 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v v ge = 6.0v 2 4 6 8 10 12 14 16 v ge (v) 0 40 80 120 160 200 i c e ( a ) t j = 25c t j = 150c 0 5 10 15 20 v ge (v) 0 2 4 6 8 10 12 14 v c e ( v ) t j = 25c t j = 150c i c = 12a downloaded from: http:///
? IRG7RA13Upbf 4 www.irf.com ? 2012 international rectifier november 5 th , 2012 fig 9. typical e pulse vs. collector current fig 11. e pulse vs. temperature fig 12. forward bias safe operating area fig 7. maximum collector current vs. case temperature 195 200 205 210 215 220 225 230 235 240 v ce, collector-to-emitter voltage (v) 600 700 800 900 1000 1100 1200 1300 e n e r g y p e r p u l s e ( j ) l = 220nh c = 0.4f 100c 25c 1 10 100 1000 v ce (v) 0.1 1 10 100 i c ( a ) 1msec 10sec 100sec tc = 25c tj = 150c single pulse fig 10. typical e pulse vs. collector-to-emitter voltage fig 8. typical repetitive peak current vs. case temperature 160 170 180 190 200 210 220 230 i c , peak collector current (a) 400 500 600 700 800 900 1000 1100 1200 1300 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh c = variable 100c 25c 25 50 75 100 125 150 t j , temperature (oc) 400 600 800 1000 1200 1400 1600 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh t = 1s half sine c= 0.4f c= 0.3f c= 0.2f 25 50 75 100 125 150 t c (c) 0 10 20 30 40 i c ( a ) 25 50 75 100 125 150 case temperature (c) 0 50 100 150 200 250 300 r e p e t i t i v e p e a k c u r r e n t ( a ) ton= 1s duty cycle = 0.01 half sine wave downloaded from: http:///
? IRG7RA13Upbf 5 www.irf.com ? 2012 international rectifier november 5 th , 2012 fig 15. maximum effective transient ther mal impedance, junction-to-case 0 100 200 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres fig 13. typical capacitance vs. collector-to-emitter voltage 0 1 02 03 04 0 q g total gate charge (nc) 0 4 8 12 16 20 v g e , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 240v v ds = 150v v ds = 60v i d = 12a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 14 . typical gate charge vs. gate-to-emitter voltage ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 ri ? (c/w) ?? i ? (sec) ? 0.018744 0.000006 0.575445 0.000170 0.687910 0.001311 0.314901 0.006923 downloaded from: http:///
? IRG7RA13Upbf 6 www.irf.com ? 2012 international rectifier november 5 th , 2012 fig 16a. t st and e pulse test circuit fig 16b. t st test waveforms fig 16c. e pulse test waveforms fig 17. - gate charge circuit (turn-off) dri ver dut l c vcc rg rg b a ipulse pulse a pulse b t st energy v ce i c current 1k vcc dut 0 l downloaded from: http:///
? IRG7RA13Upbf 7 www.irf.com ? 2012 international rectifier november 5 th , 2012 d-pak (to-252aa) package outline dimensions are shown in millimeters (inches) notes: this part marking information applies to devices produced after 02/26/2001 international assembled on ww 16, 2001 in the assembly line "a" or note: "p" in assembly line position example: lot code 1234 this is an irfr120 with assembly indicates "lead-free" product (optional) p = designates lead-free a = assembly site code part number week 16 date code year 1 = 2001 rectifier international logo lot code assembly 34 12 irfr120 116a line a 34 rectifier logo irfr120 12 assembly lot code year 1 = 2001 date code part number week 16 "p" in assembly line position indicates "lead-free" qualification to the consumer-level p = designates lead-free product qualified to the consumer level (optional) d-pak (to-252aa) part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///
? IRG7RA13Upbf 8 www.irf.com ? 2012 international rectifier november 5 th , 2012 ? qualification standards can be found at international rectifiers web site: h ttp://www.irf.com/product-info/reliability/ ?? higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for fu rther information: http:www.irf.com/whoto-call/salesrep/ ??? applicable version of jedec standar d at the time of product release. ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 to contact international rectifier, please visit http://www.irf.com/whoto-call/ visit us at www.irf.com for sales contact information . tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch d-pak (to-252aa) tape & reel information dimensions are shown in millimeters (inches) qualification information ? ? qualification level industrial ?? ? (per ? jedec ? jesd47f ? ??? ? guidelines ? ) ? moisture sensitivity level d-pak msl1 ? (per ? jedec ? j \ std \ 020d ??? ? ) ? rohs compliant yes downloaded from: http:///
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