dec 2011. version 1.1 magnachip semiconductor ltd . 1 MDD4N20Y n-channel mosfet 200v absolute maximum ratings (ta = 25 o c) characteristics symbol rating unit drain-source voltage v dss 200 v gate-source voltage v gss 20 v continuous drain current t c =25 o c i d 3.0 a t c =100 o c 1.9 a pulsed drain current (1) i dm 12 a power dissipation t c =25 o c p d 27 w derate above 25 o c 0.22 w/ o c peak diode recovery dv/dt (3) dv/dt 5.5 v/ns repetitive pulse avalanche energy (4) e ar 2.7 mj avalanche current (1) i ar 2.7 a single pulse avalanche energy (4) e as 52 mj junction and storage temperature range t j , t stg -55~150 o c thermal characteristics characteristics symbol rating unit thermal resistance, junction-to-ambient (1) r ja 110 o c/w thermal resistance, junction-to-case (1) r jc 4.5 mdd4n20 y n-channel mosfet 200v, 3.0a, 1.35 ? general description the MDD4N20Y uses advanced magnachip ? s mosfet technology, which provides low on-state resistance, high switching performance and excellent quality. MDD4N20Y is suitable device for smps, high speed switching and general purpose applications. features ? v ds = 200v ? i d = 3.0a @v gs = 10v ? r ds(on) 1.35 ? @v gs = 10v applications ? power supply ? pfc ? led tv
dec 2011. version 1.1 magnachip semiconductor ltd . 2 MDD4N20Y n-channel mosfet 200v ordering information part number temp. range package packing rohs status MDD4N20Yrh -55~150 o c d-pak reel and tape halogen free electrical charact eristics (ta =25 o c) characteristics symbol test condition min typ max unit static characteristics drain-source breakdown voltage bv dss i d = 250 a, v gs = 0v 200 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 - 2.0 drain cut-off current i dss v ds = 200v, v gs = 0v - - 1 a gate leakage current i gss v gs = 20v, v ds = 0v - - 100 na drain-source on resistance r ds(on) v gs = 10v, i d = 1.5a 1.1 1.35 ? forward transconductance g fs v ds = 30v, i d = 1.5a - 1.3 - s dynamic characteristics total gate charge q g v ds = 160v, i d = 4.0a, v gs = 5v - 3.2 4.2 nc gate-source charge q gs - 0.64 0.85 gate-drain charge q gd - 1.6 2.1 input capacitance c iss v ds = 25v, v gs = 0v, f = 1.0mhz - 148 195 pf reverse transfer capacitance c rss - 11.3 15 output capacitance c oss - 42.7 55 turn-on delay time t d(on) v gs = 5v, v ds = 100v, i d = 4.0a, r g = 25 ? - 6 20 ns rise time t r - 38 90 turn-off delay time t d(off) - 11 30 fall time t f - 13 35 drain-source body diode characteristics maximum continuous drain to source diode forward current i s - - 0.85 a source-drain diode forward voltage v sd i s = 4.0a, v gs = 0v - - 1.5 v body diode reverse recovery time t rr i f = 4.0a, dl/dt = 100a/ s (3) - 90 - ns body diode reverse recovery charge q rr - 0.24 - c note : 1. pulse width is based on r jc & r ja and the maximum allowed junction temperature of 150c. 2. pulse test: pulse width 300us, duty cycle 2%, pulse width limited by junction temperature t j(max) =150 c. 3. i sd 4.0a, di/dt 300a/us, v dd bvdss, r g =25 ? , starting t j =25 c 4. l=8.6mh, i as =3.0a, v dd =50v, r g =25 ? , starting t j =25 c
dec 2011. version 1.1 magnachip semiconductor ltd . 3 MDD4N20Y n-channel mosfet 200v fig.5 transfer characteristics fig.1 on-region characteristics fig.2 on-resistance variation with drain current and gate voltage fig.3 on-resistance variation with temperature fig.4 breakdown voltage variation vs. temperature fig.6 body diode forward voltage variation with source current and temperature 1 2 3 4 5 6 7 8 9 1011121314151617181920 1 2 3 4 5 6 notes 1. 250 ? pulse test 2. t c =25 v gs =3.0v =3.5v =4.0v =4.5v =5.0v =5.5v =6.0v =7.0v =8.0v =10.0v =15.0v i d ,drain current [a] v ds ,drain-source voltage [v] -50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 ? bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 0123456 1 2 3 4 5 v gs =5v v gs =10v r ds(on) [ ? ] i d ,drain current [a] 012345 0.1 1 -55 25 150 * notes ; 1. vds=30v i d (a) v gs [v] 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 25 150 notes : 1. v gs = 0 v 2.250 s pulse test i dr reverse drain current [a] v sd , source-drain voltage [v] -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d =1.5a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c]
dec 2011. version 1.1 magnachip semiconductor ltd . 4 MDD4N20Y n-channel mosfet 200v fig.7 gate charge characteristics fig.8 capacitance characteristics fig.9 maximum safe operating area fig.10 transient thermal response curve 02468 0 2 4 6 8 10 40v 100v 160v note : i d = 4.0a v gs , gate-source voltage [v] q g , total gate charge [nc] 1e-4 1e-3 0.01 0.1 1 10 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 single pulse r thja = 110 /w t c = 25 power (w) pulse width (s) fig.11 single pulse maximum power dissipation fig.12 maximum drain current vs. case temperature 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 100 s 100 ms dc 10 ms 1 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c r jc =4.5 /w single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , rectangular pulse duration [sec] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i d , drain current [a] t c , case temperature [ ] 110 0 200 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v]
dec 2011. version 1.1 magnachip semiconductor ltd . 5 MDD4N20Y n-channel mosfet 200v package dimension d-pak (to-252) dimensions are in millimeters, unless otherwise specified
dec 2011. version 1.1 magnachip semiconductor ltd . 6 MDD4N20Y n-channel mosfet 200v disclaimer: the products are not designed for use in hostile environments, in cluding, without limitation, aircraft, nuclear power generation, medical appliances, and devic es or systems in which malfuncti on of any product can reasonably be expected to result in a personal injury. seller?s cust omers using or selling seller?s products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notic e at any time. magnachip does not consider responsibility for use of any circuitry other than circui try entirely included in a magnachip product. is a registered trademark of magnachip semiconductor ltd.
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