, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 MRF501 (silicon) mrf502 the rf line npn silicon rf small-signal transistors . . . designed primarily for use in high-gain, low-noise amplifier, oscillator, and mixer applications. can also be used in uhf converter applications. ? high current-gain ? bandwidth product ? ft - 1 .2 gh/ (typ) ? ic - 5.0 madc ? low noise figure - nf = 4.0 db (typ) @ f - 200 mhi maximum ratings rminf symbol mrfso1 | mrf5o2 unit collkux-emitnr voltage vceo 1s v* colleetor-bw voltagl vcbo 25 [ 36 vdc emitter-five voltage vbq 3.5 ? vdc collector current ic 50 madc totil device oinlpttion 0 ta - 2sc po 200 m? derate ibovi 2sc 114 mw/c storage t?npkmur> range tng -65 to +2oo c npn silicon rf small-signal transistors f l t~ |? ? -j? 8 1 1 (' t! seating plane style 10 pin1 eminer 2. base ? ? 3 collectofl 4. case f \m a ? c d e f g h j k l h ? f millii 5.31 4.s? 4.32 0.41 ~ 0.41 eters 5^4 4.95 5.33 0.53 0.7? 0.48 2.5. bsd 0.91 0.7! 12.70 6.35 ?*r 1.17 1.22 _ l$l 147 bsc tip e _d itnn ^ !?a 0.209 0 0.171 1 0.170 1 00t6 1 1 d.016 j 01008 0.036 c 0.028 1 0500 _y&o _ ts'p. omot - 1 1 c j. k i g t s mx | 1 .230 -1ss 110 .021 .030 .019 !c jus .041 - c .050 all jedec diimflhom md nom vply nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
MRF501, mrf502 (continued) electrical characteristics (ta - 25c uniw ottwrvrae nond) i symbol i tv, i i urt. i off characteristics coltoctor-emrtur breakdown voltaga (lc - 3.0 madc. ib - 0) coll?ctof-b?w breakdown vcritao* mr f5o1 (lc- 1.0 madc, ie-0) mrf502 emitw-ben breakdown voltaga MRF501 llc ? 1.5 madc, vce -6.0 vdc, mrf602 rs - soohmi, f - 200 mhz) ff ^cto rb'cc nf 600 800 ~ ' - 1000 1200 0.6 8.0 4.5 4.0 _ - - = mhz pc pi db functional test common-emitw amplifier pow?r gain (figure 1) mrfs01 (vcc - 6-0 vdc, lc - 6.0 madc, f - 200 mhz) mrfb02 gp. _ 15 17 - db figure 1 - momhl amplifier power gain and noise figure circuit 1n319s li 13/4turn, til awg, 0.5" long, 0.5" diirmir l2 2tufm,#16awg,0.5" long.iu"d*in?ir l3 2 turin, fit awg, 0 25" long, 0.5" oiimrtr, portion approikniuly ojs" from l2
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