tsm4nb65 650v n-channel power mosfet 1/9 version: b13 to - 220 ito - 220 product summary v ds (v) r ds(on) (?)(max) i d (a) 650 3.37 @ v gs =10v 4 general description the tsm4nb60 n-channel power mosfet is produced by new advance planar process. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. to - 251 (ipak) to - 252 (dpak) features low r ds(on) 2.7? (typ.) low gate charge typical @ 14.5nc (typ.) low crss typical @ 7.0pf (typ.) 100% avalanche tested ordering information part no. package packing TSM4NB65CH c5g to-251 75pcs / tube tsm4nb65cp rog to-252 2.5kpcs / 13 reel tsm4nb65cz c0 to-220 50pcs / tube tsm4nb65ci c0 ito-220 50pcs / tube note: g denotes for halogen free absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit ipak/dpak ito-220 to-220 drain-source voltage v ds 650 v gate-source voltage v gs 30 v continuous drain current tc = 25oc i d 4 a tc = 100oc 2.4 a pulsed drain current * i dm 16 a single pulse avalanche energy (note 2) e as 31.2 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns total power dissipation @ t c = 25 o c p tot 50 25 70 w operating junction temperature t j 150 oc storage temperature range t stg -55 to +150 o c note: limited by maximum junction temperature block diagram n-channel mosfet pin definition : 1. gate 2. drain 3. source downloaded from: http:///
tsm4nb65 650v n-channel power mosfet 2/9 version: b13 thermal performance parameter symbol limit unit ipak/dpak ito-220 to-220 thermal resistance - junction to case r? jc 2.5 5 1.78 o c/w thermal resistance - junction to ambient r? ja 83 62.5 62.5 o c/w electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250ua bv dss 650 -- -- v drain-source on-state resistance v gs = 10v, i d = 2a r ds(on) -- 2.7 3.37 ? gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2.5 3.6 4.5 v zero gate voltage drain current v ds = 650v, v gs = 0v i dss -- -- 1 ua gate body leakage v gs = 30v, v ds = 0v i gss -- -- 100 na forward transfer conductance v ds = 40v, i d = 2a g fs -- 2.6 -- s dynamic total gate charge v ds = 480v, i d = 4a, v gs = 10v (note 4,5) q g -- 14.5 -- nc gate-source charge q gs -- 3.4 -- gate-drain charge q gd -- 7 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 500 -- pf output capacitance c oss -- 53.2 -- reverse transfer capacitance c rss -- 7 -- switching turn-on delay time v gs = 10v, i d = 4a, v dd = 300v, r g =25? (note 4,5) t d(on) -- 11 -- ns turn-on rise time t r -- 20 -- turn-off delay time t d(off) -- 30 -- turn-off fall time t f -- 19 -- source-drain diode ratings and characteristic source current integral reverse diode in the mosfet i s -- -- 4 a source current (pulse) i sm -- -- 16 a diode forward voltage i s = 4a, v gs = 0v v sd -- -- 1.13 v reverse recovery time v gs = 0v, i s =4a, di f /dt = 100a/us t fr -- 522 -- ns reverse recovery charge q fr -- 1.6 -- uc note 1: repetitive rating: pulse width limited by maximum jun ction temperature note 2: v dd = 50v, i as =2.4a, l=10mh, r g =25?, starting t j =25oc note 3: i sd 4a, di/dt200a/us, v dd bv dss , starting t j =25oc note 4: pulse test: pulse width 300us, duty cycle 2% note 5: essentially independent of operating temperature downloaded from: http:///
tsm4nb65 650v n-channel power mosfet 3/9 version: b13 gate charge test circuit & waveform resistive switching test circuit & waveform e as test circuit & waveform downloaded from: http:///
tsm4nb65 650v n-channel power mosfet 4/9 version: b13 diode reverse recovery time test circuit & waveform downloaded from: http:///
tsm4nb65 650v n-channel power mosfet 5/9 version: b13 unit: millimeters marking diagram y = year code m = mon th code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code downloaded from: http:///
tsm4nb65 650v n-channel power mosfet 6/9 version: b13 unit: millimeters marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code downloaded from: http:///
tsm4nb65 650v n-channel power mosfet 7/9 version: b13 unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code downloaded from: http:///
tsm4nb65 650v n-channel power mosfet 8/9 version: b13 unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code downloaded from: http:///
tsm4nb65 650v n-channel power mosfet 9/9 version: b13 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any error s or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and condi tions of sale for such products, tsc assumes no liability what soever, and disclaims any express or implied warranty , relating to sale and/or use of tsc products includin g liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyr ight, or other intellectual property right. the products shown herein are not designed for use i n medical, life-saving, or life-sustaining applicati ons. customers using or selling these products for use in such applications do so at their own risk and agre e to fully indemnify tsc for any damages resulting from such impro per use or sale. downloaded from: http:///
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