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| savantic semiconductor product specification silicon pnp power transistors 2SB655 description with to-3 package low collector saturation voltage high power dissipation applications power amplifier applications recommended for high-power high-fidelity audio frequency amplifier output stage pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -160 v v ceo collector-emitter voltage open base -160 v v ebo emitter-base voltage open collector -6 v i c collector current -12 a i cm collector current-peak -20 a p c collector power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature -40~150 fig.1 simplified outline (to-3) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SB655 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-30ma ;i b =0 -160 v v (br)cbo collector-emitter breakdown voltage i c =-1ma ;i e =0 -160 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i c =0 -6 v v cesat collector-emitter saturation voltage i c =-6a; i b =-0.6a -2.5 v v be base-emitter on voltage i c =-1a ; v ce =-5v -1.5 v i cbo collector cut-off current v cb =-120v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-4v; i c =0 -0.1 ma h fe-1 dc current gain i c =-1a ; v ce =-5v 35 200 h fe-2 dc current gain i c =-5a ; v ce =-5v 20 f t transition frequency i c =-1a ; v ce =-5v 20 mhz downloaded from: http:/// savantic semiconductor product specification 3 silicon pnp power transistors 2SB655 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm) downloaded from: http:/// |
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