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absolute maximum ratings parameter units i d @ v gs = -12v, t c =25c continuous drain current -22* i d @ v gs = -12v, t c =100c continuous drain current -18 i dm pulsed drain current -88 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 152 mj i ar avalanche current -22 a e ar repetitive avalanche energy 7.5 mj dv/dt peak diode recovery dv/dt -1.57 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 ( for 5s ) weight 1.0 ( typical ) g pre-irradiation international rectifiers r5 tm technology provides high performance power mosfets for space appli- cations. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. o c a radiation hardened IRHNJ597Z30power mosfet surface mount (smd-0.5) www.irf.com 1 30v, p-channel technology features: single event effect (see) hardened ultra low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight for footnotes refer to the last page smd-0.5 product summary part number radiation level r ds(on) i d IRHNJ597Z30 100k rads (si) 0.07 ? -22a* irhnj593z30 300k rads (si) 0.07 ? -22a*
pd-94661 downloaded from: http:///
IRHNJ597Z30 pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -30 v v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown -0.03 v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state 0.07 ? v gs = -12v, i d = -18a resistance v gs(th) gate threshold voltage -2.0 -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 12 s ( ) v ds = -15v, i ds = -18a i dss zero gate voltage drain current -10 v ds = -24v ,v gs =0v -25 v ds = -24v, v gs = 0v, t j =125c i gss gate-to-source leakage forward -100 v gs = -20v i gss gate-to-source leakage reverse 100 v gs = 20v q g total gate charge 45 v gs =-12v, i d = -22a q gs gate-to-source charge 20 nc v ds = -15v q gd gate-to-drain (miller) charge 13 t d (on) turn-on delay time 25 v dd = -15v, i d = -22a, t r rise time 100 v gs = -12v, r g = 7.5 ?, t d (off) turn-off delay time 50 t f fall time 70 l s + l d total inductance 4.0 c iss input capacitance 1670 v gs = 0v, v ds = -25v c oss output capacitance 975 p f f = 1.0mhz c rss reverse transfer capacitance 126 na ? nh ns a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 1.67 r thj-pcb junction-to-pc board 6.9

c/w measured from the center of drain pad to center of source pad note: corresponding spice and saber models are available on international rectifier website.for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) -22* i sm pulse source current (body diode) -88 v sd diode forward voltage -5.0 v t j = 25c, i s = -22a, v gs = 0v t rr reverse recovery time 75 ns t j = 25c, i f =-22a, di/dt -100a/ s q rr reverse recovery charge 125 nc v dd -25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a
r g internal gate resistance 6.6 f = 1.0mhz, open drain ? downloaded from: http:///
www.irf.com 3 pre-irradiation IRHNJ597Z30 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter 100k rads(si) 1 300krads(si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -30 -30 v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage -2.0 -4.0 -2.0 -4.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward -100 -100 na v gs =-20v i gss gate-to-source leakage reverse 100 100 v gs = 20 v i dss zero gate voltage drain current -10 -10 a v ds =-24v, v gs =0v r ds(on) static drain-to-source 0.072 0.072 ? v gs = -12v, i d = -18a on-state resistance (to-3) r ds(on) static drain-to-source 0.070 0.070 ? v gs = -12v, i d = -18a on-state resistance (smd-0.5) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics 1. part number IRHNJ597Z302. part number irhnj593z30 fig a. single event effect, safe operating area v sd diode forward voltage -5.0 -5.0 v v gs = 0v, i s = -22a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area ion let energy range vds (v) (mev/(mg/cm 2 )) (mev) (m) @vgs=0v @vgs=5v @vgs=10v @vgs=15v @vgs=20v br 37.5 278.5 36 - 30 - 30 - 30 - 30 - 30 i 59.7 320 31 - 30 - 30 - 30 - 30 - 25 au 81.4 332 27 - 30 - 30 - 30 - 25 -35 -30 -25 -20 -15 -10 -5 0 0 5 10 15 20 vgs vds br i au downloaded from: http:///
IRHNJ597Z30 pre-irradiation 4 www.irf.com normalized on-resistance vs. temperature typical output characteristics typical output characteristics typical transfer characteristics 15 0.1 1 10 100 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c vgs top -15v -12v -10v -9.0v -8.0v -7.0v -6.0v bottom -5.0v -5.0v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c vgs top -15v -12v -10v -9.0v -8.0v -7.0v -6.0v bottom -5.0v -5.0v 55.566.577.588.59 -v gs , gate-to-source voltage (v) 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = -15v 60 s pulse width t j = 150c t j = 25c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = -12v i d = -22a downloaded from: http:///
www.irf.com 5 pre-irradiation IRHNJ597Z30
maximum safe operating area typical gate charge vs. gate-to-source voltage typical capacitance vs. drain-to-source voltage typical source-drain diode forward voltage 0123456 -v sd , source-to-drain voltage (v) 0.1 1 10 100 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 25c 1 10 100 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 1 00 s 1 10 100 -v ds , drain-to-source voltage (v) 0 500 1000 1500 2000 2500 3000 3500 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 1 02 03 04 05 06 0 q g, total gate charge (nc) 0 4 8 12 16 20 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -24v v ds = -15v i d = -22a for test circuit see figure 13 downloaded from: http:///
IRHNJ597Z30 pre-irradiation 6 www.irf.com fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit
1 0.1 % !"#"$" + - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 0 6 12 18 24 30 t , case temperature ( c) -i , drain current (a) c d limited by package downloaded from: http:///
www.irf.com 7 pre-irradiation IRHNJ597Z30 fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v t p v ( br ) dss i as 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 300 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -9.8a -14a bottom -22a downloaded from: http:///
IRHNJ597Z30 pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. -24 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = - 25v, starting t j = 25c, l=0.63 mh peak i l = - 22a, v gs = -12v i sd - 22a, di/dt -205a/ s, v dd - 30v, t j 150c footnotes: case outline and dimensions smd-0.5 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 01/2005 1 = drain 2 = gate 3 = source pad assignments downloaded from: http:///

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