p p j f 4na6 5 a august 19 ,201 5 - rev.0 0 page 1 6 5 0 v n - c hannel mosfet v oltage 6 5 0 v c urrent 4 a ito - 220ab - f f eatures ? r ds(on) , v gs @10v,i d @ 2 a < 2.7 ? high switching speed ? improved dv/dt capability ? low gate charge ? low reverse transfer capac itance ? lead free in compliance wit h eu rohs 2011/65/eu directive . ? green molding compound as p er iec61249 std. (halogen free) m echanical data ? case : i to - 220ab - f package ? terminals : solderable per mil - std - 750, method 2026 ? approx. weight : 0.068 ounces, 2 grams m aximum r atings and t hermal c haracteristics (t a =25 o c unless otherwise noted) parameter symbol ito - 220ab - f units drain - source voltage v ds 6 5 0 v gate - source voltage v gs + 30 v continuous drain current i d 4 a pulsed drain current i dm 16 a single pulse avalanche energy (note 1 ) e as 2 02 mj power dissipation t c =25 o c p d 33 w derate above 25 o c 0.26 w/ o c operating junction and storage temperature range t j ,t stg - 55~150 o c typical thermal resistance - junction to case - j unction to ambient r jc ja 3.79 120 o c /w ? limited only by maximum junction temperature
p p j f 4na6 5 a august 19 ,201 5 - rev.0 0 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source breakdown voltage bv dss v gs =0v,i d =250ua 6 5 0 - - v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 2 3 4 v drain - source on - state resistance r ds(on) v gs =10v,i d = 2 a - 2 . 5 2. 7 dss v ds = 6 5 0v,v gs =0v - - 1 .0 ua gate - source leakage current i gss v gs = + 30 v,v ds =0v - - + 100 na diode forward voltage v sd i s = 4 a,v gs =0v - 0. 76 1.4 v dynamic (note 4 ) total gate charge q g v ds = 52 0 v, i d = 4 a, v gs = 10 v (note 2 , 3 ) - 1 8 - nc gate - source charge q gs - 3 .3 - gate - drain charge q gd - 8.3 - input capacitance ciss v ds =25v, v gs =0v, f= 1.0mhz - 555 - pf output capacitance coss - 55.4 - reverse transfer capacitance crss - 2.4 1 - turn - on delay time td (on) v dd = 3 25 v, i d = 4 a, r g = 25 (note 2 , 3 ) - 11 - ns turn - on rise time t r - 2 5 - turn - off delay time td (off) - 52 - turn - off fall time t f - 2 9 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 4 a maximum pulsed drain - source diode forwa rd current i sm --- - - 16 a reverse recovery time trr v gs =0v, i s = 4 a di f / dt=100a/us (note 2 ) - 266 - ns reverse recovery charge qrr - 2.24 - uc notes : 1. l=30mh, i as =3. 6 a, v dd = 50 v, r g = 2 5 ohm, starting t j =25 o c 2. pulse width < 300us, duty cycle < 2% 3. essentially independent of operating temperature typical characteristics . 4. guaranteed by design, not subject to product ion testing
p p j f 4na6 5 a august 19 ,201 5 - rev.0 0 page 3 t ypical characteristic curves fig.1 output characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. dr ain current fig. 4 on - resistance vs. junction temperature fig. 5 capacitance vs. drain - source voltage fig. 6 source - drain diode forward voltage
p p j f 4na6 5 a august 19 ,201 5 - rev.0 0 page 4 t ypical characteristic curves fig. 7 gate charge fig. 8 bv dss vs. junction temperat ure fig. 9 threshold voltage variation with temperature fig. 10 maximum safe operating area fig. 11 PJF4NA65A normalized transient thermal impedance vs. pulse width
p p j f 4na6 5 a august 19 ,201 5 - rev.0 0 page 5 packaging information . ito - 220ab - f dime nsion u nit: mm
p p j f 4na6 5 a august 19 ,201 5 - rev.0 0 page 6 part no packing code version part n o packing code package type packing type marking ver sion pj f4na65 a _t0_00001 ito - 220ab - f 50pcs / tube f4na65 a halogen free
p p j f 4na6 5 a august 19 ,201 5 - rev.0 0 page 7 disclaimer
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