to-251 s plastic-encapsulate mosfets cjd02n60 n-channel power mosfet general description the high voltage mosfet uses an advanced termination scheme to provide enhanced volt age-blocking capability without degrading performance over time . in addition , this advanced mosfet is designed to withstand high energy in avalanche and commutation modes . the new energy efficient design also offers a drain-to-source diode with a fast recovery time. designed for high voltage, high speed switching app lications in power suppliers, converters and pwm motor controls , these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected vo ltage transients. feature z robust high voltage termination z avalanche energy specified z source-to-drain diode recovery time compar able to a discrete fast recovery diode z diode is characterized fo r use in bridge circuits z i dss and v ds(on) specified at elevated temperature maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 600 gate-source voltage v gs 20 v continuous drain current i d 2 pulsed drain current i dm 8 a single pulsed avalanche energy* e as 128 mj power dissipation p d 1.25 w thermal resistance from junction to ambient r ja 100 /w junction temperature t j 150 storage temperature t stg -50 ~+150 *e as condition: t j =25 ,v dd =50v,l=64mh,i as =2a,r g =25 ? , starting t j = 25c to-251 s 1. gate 2. drain 3. source 1 of 3 sales@zpsemi.com www.zpsemi.com cjd02n60 d,mar,2014
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit off characteristics drain-source breakdown voltage v (br) dss v gs = 0v, i d =250a 600 v v ds =600v, v gs =0v 25 zero gate voltage drain current i dss v ds =480v, v gs =0v, t j =125 100 a gate-body leakage current i gss v ds =0v, v gs =20v 100 na on characteristics (note1) gate-threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-resistance r ds(on) v gs =10v, i d =1a 3.6 4.4 ? forward transconductance g fs v ds =50v, i d =1a 1 s dynamic characteristics (note 2) input capacitance c iss 435 output capacitance c oss 56 reverse transfer capacitance c rss v ds =25v,v gs =0v, f =1mhz 9.2 pf switching characteristics (note 2) total gate charge q g 40 50 gate-source charge q gs 4.2 gate-drain charge q gd v ds =480v, v gs =10v, i d =2.4a 8.4 nc turn-on delay time t d (on) 12 turn-on rise time t r 21 turn-off delay time t d(off) 30 turn-off fall time t f v dd =300v,i d =2a, v gs =10v,r g =18 ? 24 ns drain-source diode characteristics drain-source diode forward voltage(note1) v sd v gs =0v, i s =2a 1.6 v continuous drain-source diode forward current i s 2 a pulsed drain-source diode forward current i sm 8 a notes: 1. pulse test : pulse width 300s, duty cycle 2%. 2. guaranteed by design, not subject to production. 2 of 3 sales@zpsemi.com www.zpsemi.com cjd02n60 d,mar,2014
0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 01234567 0.0 0.5 1.0 12345 0 2 4 6 8 10 0.0 0.4 0.8 1.2 1.6 2.0 1e-3 0.01 0.1 1 24681012 0 5 10 15 20 25 30 25 50 75 100 125 0 1 2 3 4 5 pulsed v gs =5.5v v gs = 6v 8v 10v v gs =5v output characteristics v gs =4.5v drain current i d (a) drain to source voltage v ds (v) v ds =10v pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) t a =100 t a =25 4 0.1 t a =25 pulsed on-resistance r ds(on) ( ) drain current i d (a) i d ?? r ds(on) v gs =10v pulsed source current i s (a) source to drain voltage v sd (v) v sd i s ?? t a =100 t a =25 pulsed i d =1a on-resistance r ds(on) ( ) gate to source voltage v gs (v) v gs ?? r ds(on) t a =100 t a =25 i d =250ua threshold voltage threshold voltage v th (v) junction temperature t j ( ) 3 of 3 sales@zpsemi.com www.zpsemi.com cjd02n60
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