dfnwb2 2-6l-a dfnwb2 2-6l-a power management mosfets-schottky CJLJF3117P p-channel mosfet and schottky barrier diode features z independent pinout to each device to ease circuit design z high current schottky diode z including a cj2301 mosfet and a rb551v-30 schottky (independently) in a package applications z optimized for portable applicat ions like cell phones,digital cameras,media players,etc z dc-dc buck circuits z li-ion battery applications z color display and camera flash regulators marking: maximum ratings (t a =25 unless otherwise noted) *repetitive rating pluse width limited by junction temperature. symbol parameter value unit p-mosfet v ds drain-source voltage -20 v v gs gate-source voltage 8 v i d continuous drain current -3.3 a i dm * pulse drain current -10 a schottky barrier diode v rrm peak repetitive reverse voltage 30 v v r dc blocking voltage 30 v i o average rectified forward current 2 a power dissipation, temperature and thermal resistance p d power dissipation 0.75 w r ja thermal resistance from junction to ambient 83.3 / w t j junction temperature 150 t stg storage temperature -55~+150 t l lead temperature for soldering purposes(1/8?? from case for 10 s) 260 3 4 5 d s g 2 1 a 6 k 1 of 4 sales@zpsemi.com www.zpsemi.com CJLJF3117P c,jan,2014
electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit p-mosfet static parameters drain-source breakdown voltage v (br)dss v gs =0v, i d =-250a -20 v zero gate voltage drain current i dss v ds =-16v,v gs = 0v -1 a gate-body leakage current i gss v gs =8v, v ds = 0v 100 na gate threshold voltage v gs(th) v ds =v gs , i d =-250a -0.4 -1 v drain-source on-resistance(note1) r ds(on) v gs =-4.5v, i d =-2a 100 m ? v gs =-2.5v, i d =-2a 135 m ? v gs =-1.8v, i d =-1.6a 250 m ? forward transconductance (note1) g fs v ds =-5v,i d =-2a 2.5 s diode forward voltage(note1) v sd i s =-1a, v gs = 0v -1 v dynamic parameters (note 2) input capacitance c iss v ds =-10v,v gs =0v,f =1mhz 531 pf output capacitance c oss 91 pf reverse transfer capacitance c rss 56 pf switching parameters (note 2) turn-on delay time t d(on) v gs =-4.5v,v dd =-5v, r g =6 ? , i d =-1a 5.2 ns turn-on rise time t r 13.2 ns turn-off delay time t d(off) 13.7 ns turn-off fall time t f 19.1 ns total gate charge q g v ds =-10v,v gs =-4.5v, i d =-2a 5.5 6.2 nc gate-source charge q gs 1.0 nc gate-drain charge q gd 1.4 nc gate resistance r g 8.8 ? schottky barrier diode forward voltage v f i f =0.1a 0.39 v i f =1a 0.55 v reverse current i r v r =30v 20 a v r =20v 8 a v r =10v 4.5 a junction capacitance c j v r =5v,f=1mhz 30 pf note: 1.pulse test: pulse width =300 s, duty cycle 2% 2.these parameters have no way to verify. 2 of 4 sales@zpsemi.com www.zpsemi.com CJLJF3117P c,jan,2014
-0 -2 -4 -6 -8 0.02 0.04 0.06 0.08 0.10 0.12 -0 -2 -4 -6 -8 -10 0.02 0.04 0.06 0.08 0.10 0.12 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1 -10 -100 -1000 -10000 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -0 -2 -4 -6 -8 -10 -12 -14 -16 25 50 75 100 125 -0.42 -0.44 -0.46 -0.48 -0.50 -0.52 -0.54 -0.56 -0.58 -0.60 -0 -1 -2 -3 -4 -0 -2 -4 -6 -8 -10 -12 -14 -16 ta=25 pulsed i d =-2a ?? v gs r ds(on) on-resistance r ds(on) ( ) gate to source voltage v gs (v) ta=25 pulsed v gs =-4.5v v gs =-2.5v ?? i d r ds(on) on-resistance r ds(on) (m ) drain current i d (a) ta=25 pulsed sorce drain diode forward voltage source current i s (a) source to drain voltage v sd (v) ta=100 v ds =-5v pulsed ta=25 transfer characteristics drain current i d (a) gate to source voltage v gs (v) threshold voltage threshold voltage v th (v) junction temperature t j ( ) output characteristics v gs =-4v -3.5v -3v -2.5v pulsed v gs =-2v v gs =-1.5v drain current i d (a) drain to source voltage v ds (v) 3 of 4 sales@zpsemi.com www.zpsemi.com CJLJF3117P c,jan,2014
0 5 10 15 20 25 30 1e-7 1e-6 1e-5 1e-4 1e-3 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.01 0.1 1 10 100 1000 schottky characteristics reverse characteristics reverse current i r (a) reverse voltage v r (v) t a =25 t a =100 t a =100 t a =25 forward current i f (ma) forward voltage v f (v) forward characteristics 2000 4 of 4 sales@zpsemi.com www.zpsemi.com CJLJF3117P c,jan,2014
|
