jiangsu changjiang electronics technology co., ltd www.cj-elec.com 1 f , aug,2015 CJLJF3117P p-channel mosfet and schottky barrier diode feature appl ication marking maximum ratings (t a =25 unless otherwise not ed) dfnwb2x2-6l -a power management mosfets-schottky v (br)dss /vr r ds(on) max i d /i o -20v 100 m@-4.5v -3.3a ? 135 m @-2.5v 250 m@-1.8v? equivalent circuit 3 4 5 d s g 2 1 a 6 k *repetitive rating pluse width limited by junction temperature. symbol para meter value unit p-mosfet v ds drain-source voltage -20 v v gs gate-source voltage 8 v i d continuous drain c urrent -3.3 a i dm * pulse drain current -10 a schottky ba rrier diode v rrm peak repetitive reverse v oltage 30 v v r dc blocking volt age 30 v i o average rectified f orward current 2 a power dissip ation, temperature and thermal resistance p d power dissipation 0.75 w r ja thermal resistance from jun ction to ambient 83.3 / w t j junction t emperature 150 t stg storage t emperature -55~+150 t l lead t emperature for soldering purposes(1/8?? from case for 10 s) 260 dfnwb 2 2- 6 l - a z optimized for portable applicat ions like cell phones,digital cameras,media players,etc z dc-dc buck circuits z li-ion battery applications z color display and camera flash regulators z independent pinout to each device to ease circuit design z high current schottky diode 30v / 2a ?
www.cj-elec.com 2 f,aug,2015 mosfet electrical characteristics a t =25 unless otherwise specified p arameter symbol test conditions min typ max unit p-mosfet static pa rameters drain-source breakd own voltage v (br)dss v gs =0v, i d =-250a -20 v zero gate voltage drai n current i dss v ds =-16v,v gs = 0v -1 a gate-body leakage current i gss v gs =8v, v ds = 0v 100 na gate threshold voltage v gs(th) v ds =v gs , i d =-250a -0.4 -0.7 -1 v drain-source on -resistance(note1) r ds(on) v gs =-4.5v, i d =-2a 58 100 m ? v gs =-2.5v, i d =-2a 80 135 m ? v gs =-1.8v, i d =-1.6a 120 250 m ? forwa rd transconductance (note1) g fs v ds =-5v,i d =-2a 2.5 s diode forwar d voltage(note1) v sd i s =-1a, v gs = 0v -1 v dynamic p arameters (note 2) input capacitance c iss v ds =-10v,v gs =0v,f =1mhz 531 pf output capacitance c oss 91 pf reverse transfer capacitance c rss 56 pf switching parameters (note 2) turn-on delay t ime t d(on) v gs =-4.5v,v dd =-5v, r g =6 ?, i d =-1a 5.2 ns turn-on rise time t r 13.2 ns turn-off delay ti me t d(off) 13.7 ns turn-off fall time t f 19.1 ns total gate charge q g v ds =-10v,v gs =-4.5v, i d =-2a 5.5 6.2 nc gate-source charge q gs 1.0 nc gate-drain charge q gd 1.4 nc gate resistance r g 8.8 ? schottky barri er diode forwa rd voltage v f i f =0.1a 0.39 v i f =1a 0.55 v reverse current i r v r =30v 20 a v r =20v 8 a v r =10v 4.5 a junction capac itance c j v r =5v,f=1mhz 30 pf note: 1.pulse test: pulse widt h =300 s, duty cycle 2% 2.these parameters have no way to verify.
-0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -0 -2 -4 -6 -8 -10 -0 -2 -4 -6 -8 -10 30 60 90 120 150 -0 -2 -4 -6 -8 0 50 100 150 200 250 -0 -1 -2 -3 -4 -0 -2 -4 -6 -8 -10 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1e-3 -0.01 -0.1 -1 -10 transfer characteristics drain current i d (a) gate to source voltage v gs (v) r ds(on) ?? v gs v gs =-4.5v v gs =-2.5v r ds(on) ?? i d on-resistance r ds(on) (m ) drain current i d (a) i d =-2.8a on-resistance r ds(on) (m ) gate to source voltage v gs (v) -3 -0.3 -3e-3 -0.03 t a =25 pulsed t a =25 pulsed t a =25 pulsed t a =25 pulsed t a =25 pulsed output characteristics v gs = -4.5v,-3.5v,-2.5v v gs =-2.0v v gs =-1.5v v gs =-1.0v drain current i d (a) drain to source voltage v ds (v) i s ?? v sd source current i s (a) source to drain voltage v sd (v) 7 \ s l f d o & |