xemod reserves the right to make changes to this specification without further notice. before the product described here is written into specifications or used in critical applications , the performance characteristics should be verified by contacting xemod. xemod quikpac data www.xemod.com rev. b (05 - 16 - 01) page 1 of 3 qpp - 013 qpp - 013 35w, 869 - 894mhz quikpac module data class ab driver stage general description: the qpp - 013 quikpac? rf power module is a class ab amplifier stage designed for use in the driver stage of linear rf power amplifiers for cellular base stations. t he power transistors are fabricated using xemod?s advanced design ldmos process. this unit has a factory set, regulated and temperature compensated gate bias, eliminating the need for the user to provide adjustable gate bias voltage circuits and make indiv idual bias adjustments during stage alignment. features: single polarity operation matched for 50 w rf interfaces xemos fet technology stable performance quikpac system compatible quikclip or flange mounting standard operating conditions parameter symbol min nom max units frequency range f 869 894 mhz supply (drain) voltage v d 26.0 28.0 32.0 vd c bias (gate) voltage v g 11.0 12.0 13.0 vdc bias (gate) current, average i g 20 ma rf source & load impedance w 50 ohms load impedance for stable operation (all phases) vswr 10:1 operating baseplate temperature t op - 20 +90 oc output dev ice thermal resistance, channel to baseplate q jc 1.9 oc/w maximum ratings parameter symbol value units supply (drain) voltage v dd 35 vdc control (gate) voltage, v dd = 0 vdc v g 15 vdc input rf power p in 2.5 w load impedance for continuous operati on without damage vswr 3:1 output device channel temperature 200 oc lead soldering temperature +190 oc storage temperature t stg - 65 to +150 oc performance at 28vdc & 25oc parameter symbol min nom max units supply (drain) voltage v d1,2 27.5 28.0 28.5 vdc quiescent current (total) (1) i dq 270 300 330 ma power output at 1 db compression (single tone) p - 1 35 40 w gain at 7w pep (two tone) g 14.5 15.5 db gain variation over frequency at 7w output (two tone) d g 0.2 0.5 db input return loss (50 w ref) at 7w pep (two tone) irl 12.0 15.0 db drain efficiency at 35w p out (single tone) h 40 45 % drain efficiency at 35w pep (two tone) h 33 36 % 3 rd order imd product (2 tone at 35w pep;1 mhz spacing) - 30 - 27 dbc
xemod quikpac data www.xemod. com rev. b (05 - 16 - 01) page 2 of 3 qpp - 013 performance at 28vdc & 25oc (continued) parameter symbol min nom max units imd variation ? 100 khz to 25 mhz tone spacing 1.0 2.0 db 2 nd harmonic at 35w p out (single tone) - 40 dbc 3 rd harmonic at 35w p out (single tone) - 45 dbc gro up (signal) delay t d 3.5 ns transmission phase flatness 0.5 degrees cdma acpr at 7w pavg - 46 db cdma acpr at 3.5w pavg - 49 db drain efficiency at 7w cdma h 20 22 % drain efficiency at 3.5w cdma h 14 15 % performance at 28vdc over temperature param eter symbol min nom max units power output at 1 db compression (single tone) p - 1 w gain variation over frequency at 7w output (single tone) d g db input return loss (50 w ref) at 7w pep (two tone) irl 12.0 15.0 db drain efficiency at 35w pep (two tone) h % 3 rd order imd product (2 tone at 35w pep;1 mhz spacing) - 28 - 26 dbc group (signal) delay t d 3.5 ns transmission phase flatness 0.5 degrees notes: this gr - version quikpac module has an internally regulated gate voltage that is preset at the factory. a voltage of +12vdc ( 1v) should be applied to the gate lead (pin 3). no further adjustment is required. the gate voltage is thermally compensated for operation over the temperature range listed in the data sheet. although the mo dule will operate with lower voltages applied, the internal regulator is not functioning and the specified performance may not be achieved. gate voltage must be applied coincident with or after application of the drain voltage to prevent potentially destr uctive oscillations. bias voltages should never be applied to a module unless it is terminated on both input and output. the quiescent current set during manufacture will be within the range specified in the performance section (nominal 10%) and is selec ted to balance imd, input return loss, and efficiency. this setting is suitable for most applications. modules with different optimization profiles are available by special order. internal rf decoupling is included on all bias leads. no additional bypass elements are required, however some applications may require energy storage on the drain leads to accommodate time - varying waveforms. the rf leads are internally protected against dc voltages up to 100v. care should be taken to avoid video transients that may damage the active devices.
xemod quikpac data www.xemod. com rev. b (05 - 16 - 01) page 3 of 3 qpp - 013 package styles this model is available in both a (h10535) and af (h10890) package styles. style af is shown for reference. please see the applicable outline drawing for specific dimensions.
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