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sch ottky b arrier d iode f eatures ? high s peed ? high r eliabili ty ? small p ackage ? low f orward v oltage applications ? high s peed s witching marking : s4 maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v r dc blocking v oltage 10 v i o continuous f orward c urrent 100 ma i fm p eak f orward c urrent 200 ma i f s m non - repetitive p eak f orward surge c urrent @ 10ms 1 a p d power d issipation 150 mw r j a th ermal r esistance f rom junction t o a mbient 667 /w t j junction t emperature 125 t stg s torage t emperature - 5 5 ~+ 150 electrical c haracteristics (t a =25 unless otherwise specified) parameter symb ol test conditions m in typ m ax u nit reverse voltage v (br) i r =10 0 a 10 v reverse c urrent i r v r = 1 0 v 20 a i f = 1 ma 0.18 i f = 5 ma 0.3 forward voltage v f i f = 100 ma 0.5 v total capacitance c tot v r = 0 v,f=1mhz 40 pf so d - 5 23 1SS389 1 date:2011/05 www.htsemi.com semiconductor jinyu
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