features marking: 1 h igh diode semiconductor sot- 23 ?? ? symbol parameter value unit v collector-base voltage 60 v v ce o collector-emitter voltage 50 v v eb o emitter-base voltage 5 v i c co llector current 150 ma p c co llector power dissipation 200 mw r j a thermal resistance from junction to ambient 625 /w t j jun ction temperature 150 t st g storage temperature -55 +150 classification of h fe electrical characteristics (t =25 unless otherwise specified cr sot -23 plastic-encap sulate transistors transistor( np n ) e b c cbo 2SC945 excellent h fe linearity low noise parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br) cbo i c =100ua, i e =0 60 v collector-emitter breakdown voltage v (br) ceo i c =1ma , i b =0 50 v emitter-base breakdown voltage v (br) ebo i e =0.1ma, i c =0 5 v collector cut-off current i cbo v cb =60v, i e =0 0.1 ua collector cut-off current i cer v ce =55v,r=10m ? 0.1 ua emitter cut-off current i ebo v eb =5v , i c =0 0.1 ua h fe(1) v ce =6 v , i c =1ma 130 400 dc current gain h fe(2) v ce =6 v , i c =0.1ma 40 collector-emitter saturation voltage v ce (sat) i c =100ma, i b =10ma 0.3 v base-emitter saturation voltage v be (sat) i c =100ma, i b =10ma 1 v transition frequency f t v ce =6v,i c =10ma,f =30 mhz 150 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mh z 3.0 pf noise figure nf v ce = 6v,i c =0.1 ma r g =10 k ? ,f=1k mh z 4 10 db rank l h range 130-200 200-400
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