2sd2671 transistors rev.b 1/2 low frequency amplifier 2sd2671 z application low frequency amplifier driver z features 1) a collector current is large. 2) v ce(sat) : max. 370mv at lc=1.5a / l b =75ma z external dimensions (unit : mm) each lead has same dimensions (1) base(2) emitter (3) collector tsmt3 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 ( 2 ) ( 1 ) ( 3 ) 2.9 2.8 1.9 1.6 0.95 0.95 0.4 z absolute maximum ratings (ta=25 c) parameter symbol v cbo v ceo v ebo i c i cp p c tj tstg limits 3030 62 500150 55 to + 150 4 ? 1 unit vv v a a mw 1w c c collector-base voltagecollector-emitter voltage emiter-base voltage collector current power dissipation junction temperature range of storage temperautre ? 2 ? 1 single pluse, pw = 1ms ? 2 mounted on a 25 25 0.8mm ceramic substrate t z electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit conditions v cb = 10v, i e = 0a, f = 1mhz transition frequencycollector output capacitance f t 280 mhz v ce = 2v, i e = 200ma, f = 100mhz bv cbo 30 v i c = 10 a collector-emitter breakdown voltae bv ceo 30 v i c = 1ma collector-base breakdown voltae bv ebo 6 v i e = 10 a emitter-base breakdown voltage i cbo 100 na v cb = 30v collector cutoff current i ebo 100 na v eb = 6v emitter cutoff current v ce(sat) 180 370 mv i c = 1.5a, i b = 75ma collector-emitter saturation voltage h fe 270 680 v ce = 2v, i c = 200ma dc current gain cob 20 pf ? ? ? pulsed downloaded from: http:///
2sd2671 transistors rev.b 2/2 z packaging specifications packagecode taping basic ordering unit (pieces) 2sd2671 tl 3000 type z electrical characteristic curves fig.1 dc current gain vs. collector current 10 100 1000 0.001 0.01 0.1 1 1 0 collector current : i c (a) dc current gain : h fe vce= 2v pulsed ta=125 c ta=25 c ta = 25 c f ig.2 collector-emitter saturation voltag e base-emitter saturation voltage vs. collector current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 collector current : ic (a) collector saturation voltage : v ce(sat) (v ) ic/ib=20/1 pulsed ta=125 c ta=25 c ta = 25 c 0.1 1 10 0.001 0.01 0.1 1 10 collector current : ic (a) base saturation voltage : v be(sat) (v ) ic/ib=20/1pulsed ta=125 c ta=25 c ta = 25 c fig.3 base-emitter saturation voltag e vs. collector current fig.4 grounded emitter propagatio n characteristics base to emitter current : v be (v) collector current : i c (a) 0.001 0.01 0.1 1 10 0 1.4 0.2 0.4 0.6 0.8 1 1.2 vce= 2v pulsed ta=125 c ta=25 c ta = 25 c fig.5 gain bandwidth product vs. emitter current 10 100 1000 0.01 0.1 1 1 0 emitter current : i e (a) transition frequency : ft (mhz) ta=25 c vce= 2v f= 100mhz fig.6 collector output chapacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage emitter input capacitance : cib (pf) collector output capacitance : cob (pf ) 10 100 1000 0.001 0.01 0.1 1 10 10 0 emitter to base voltage : v eb (v) collector to base voltage : v cb (v) ic=0af=1mhz ta=25 c cob cib downloaded from: http:///
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction. downloaded from: http:///
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