oct . 20 1 5 . ver . 1.3 magnachip semiconductor ltd . 1 m dv1545 C s ingle n - channel trench mosfet 30 v absolute maximum ratings (ta = 25 o c) characteristics symbol rating unit drain - source voltage v dss 30 v gate - source voltage v gss 20 v continuous drain current (1) t c =25 o c (silicon limited) i d 39 a t c =25 o c (package limited) 32 t c = 25 o c 28 t c = 70 o c 27 t a =25 o c 14 t a = 70 o c 11 pulsed drain current i dm 120 power dissipation t c =25 o c p d 23 w t c = 70 o c 14 t a =25 o c 3.4 t a = 70 o c 2.2 single pulse avalanche energy ( 2 ) e as 45 mj junction and storage temperature range t j , t stg - 55~150 o c thermal characteristics characteristics symbol rating unit thermal resistance, junction - to - ambient (1) r ja 36 o c/w thermal resistance, junction - to - case r jc 5.0 md v1545 sing le n - channel trench mosfet 30 v features ? v ds = 30 v ? i d = 32 a @v gs = 10v ? r ds(on) < 10.1 m @v gs = 10v < 14.0 m @v gs = 4.5 v ? 100% uil tested ? 100% rg tested general description the md v1545 uses advanced magnachip s mosfet technology, which provides high performance in on - state resistance, fast switching performance and excellent quality . md v1545 is suitable device for dc/dc converter and general purpose applications. s s s g g s s s d d d d d d d d p dfn 33 d s g
oct . 20 1 5 . ver . 1.3 magnachip semiconductor ltd . 2 m dv1545 C s ingle n - channel trench mosfet 30 v ordering information part number temp. range package packing ro hs status md v1545 u rh - 55~150 o c p dfn 33 tape & reel halogen free electrical characteristics (t j =25 o c) characteristics symbol test condition min typ . max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 30 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1. 3 1. 9 2 . 7 drain cut - off current i dss v ds = 30 v, v gs = 0v - - 1 u a gate leakage current i gss v gs = 20v, v ds = 0v - - 100 na drain - source on resistance r ds(on) v gs = 10v, i d = 11 a - 8.2 10.1 m t j = 125 o c 11.9 14.6 v gs = 4.5 v, i d = 9 a - 11.5 1 4.0 forward transconductance g fs v ds = 5v, i d = 11 a - 31 - s dynamic characteristics total gate charge q g( 10 v) v dd = 15 v, i d = 11 a, v gs = 10v 9.7 14.0 18.2 nc total gate charge q g( 4.5 v) 4.0 5.7 7.4 gate - source charge q gs - 2.7 - gate - drain charge q gd - 1.3 - input capacitance c iss v ds = 15 v, v gs = 0v, f = 1.0mhz 560 800 1039 pf reverse transfer capacitance c rss 40 58 75 output capacitance c oss 273 390 560 turn - on delay time t d(on) v gs = 1 0 v, v d d = 1 5 .0v, i d = 11a, r g = 3 , - 5.7 - ns rise time t r - 11.3 - turn - off delay time t d(off) - 20.0 - fall time t f - 5.7 - gate resistance r g f=1 mhz 1.0 1. 6 3.0 drain - source body diode characteristics source - drain diode forward voltage v sd i s = 1a, v gs = 0v - 0. 7 5 1. 1 v body diode reverse recovery time t rr i f = 11 a, dl/dt = 1 0 0a/s - 28.0 - ns body diode reverse recovery charge q rr - 23.0 - nc note : 1. surface mounted fr - 4 board by jedec (jesd51 - 7). continuous current at t c =25 is silicon limited 2. e as is tested at starting t j = 25 , l = 0.1 mh, i as = 15 a , v dd = 27v, v gs = 10v
oct . 20 1 5 . ver . 1.3 magnachip semiconductor ltd . 3 m dv1545 C s ingle n - channel trench mosfet 30 v fig.5 transfer characteristics fig.1 on - region characteristics fig.2 on - resistance variation with drain current and gate voltage fig.3 on - resistance variation with temperature fig.4 on - resistance variation with gate to source voltage fig.6 body diode forward voltage variation with source current and temperature 0.0 0.5 1.0 1.5 2.0 0 10 20 30 40 50 3.0v 4.0v 6.0v v gs = 10v 8.0v 4.5v i d , drain current [a] v ds , drain-source voltage [v] 0 20 40 0 2 4 6 8 10 12 14 16 18 20 v gs = 10v v gs = 4.5v drain-source on-resistance [mohm] i d , drain current [a] 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 80 90 100 * notes : i d = 11.0a r ds(on) [mohm], drain-source on-resistance v gs , gate to source volatge [v] 0 1 2 3 4 5 0 5 10 15 20 v gs , gate-source voltage [v] * notes : v ds = 5v i d , drain current [a] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 * notes : v gs = 0v i dr , reverse drain current [a] v sd , source-drain voltage [v] -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 * notes : 1. v gs = 10 v 2. i d = 11 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c]
oct . 20 1 5 . ver . 1.3 magnachip semiconductor ltd . 4 m dv1545 C s ingle n - channel trench mosfet 30 v fig.7 gate charge characteristics fig.8 capacitance characteristics fig.9 maximum safe operating area fig.10 maximum drain current v s. case temperature fig.11 transient thermal response curve 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 * notes : duty factor, d=t 1 /t 2 peak t j = p dm * z thjc * r thjc (t) + t c single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z thjc (t), thermal response t 1 , rectangular pulse duration [sec] 0 5 10 15 20 0 2 4 6 8 10 * note : i d = 11a v ds = 15v v gs , gate-source voltage [v] q g , total gate charge [nc] 25 50 75 100 125 150 0 10 20 30 40 50 limited by package i d , drain current [a] t c , case temperature [ o c] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 10 s 1 s 100 ms dc 10 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 o c i d , drain current [a] v ds , drain-source voltage [v] 0 5 10 15 20 25 30 0 500 1000 1500 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v]
oct . 20 1 5 . ver . 1.3 magnachip semiconductor ltd . 5 m dv1545 C s ingle n - channel trench mosfet 30 v package dimension powerdfn33 (3.3x3.3mm) d imensions are in millimeters, unless otherwise specified (unit: mm)
oct . 20 1 5 . ver . 1.3 magnachip semiconductor ltd . 6 m dv1545 C s ingle n - channel trench mosfet 30 v disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own ris k and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnachip semiconductor ltd.
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