sur29 0 ultra fast recovery epitaxial diodes sur29 0 v rsm v 1200 v rrm v 1200 symbol test conditions maximum ratings unit i frms i favm i frm t vj =t vjm t c =85 o c; rectangular, d=0.5 t p <10us; rep. rating, pulse width limited by t vjm 70 29 375 a t vj =45 o c t=10ms (50hz), sine t=8.3ms (60hz), sine t vj =125 o c t=10ms(50hz), sine t=8.3ms(60hz), sine 190 200 175 185 a i fsm t vj =45 o c t=10ms (50hz), sine t=8.3ms (60hz), sine t vj =125 o c t=10ms(50hz), sine t=8.3ms(60hz), sine 190 170 a 2 s i 2 t t vj t vjm t stg -40...+125 125 -40...+125 o c p tot t c =25 o c m d mounting torque 125 0.4...0.6 2 w nm weight g c(tab) a=anode, c & c(tab)=cathode c a c a dimensions to-220 160 150 dim. a b c d e f g h j k m n q r milimeter min. max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 bsc 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 inches min. max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 bsc 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
SUR29120 ultra fast recovery epitaxial diodes advantages * high reliability circuit operation * low voltage peaks for reduced protection circuits * low noise switching * low losses * operating at lower temperature or space saving by reduced cooling applications * antiparallel diode for high frequency switching devices * anti saturation diode * snubber diode * free wheeling diode in converters and motor control circuits * rectifiers in switch mode power supplies (smps) * inductive heating and melting * uninterruptible power supplies (ups) * ultrasonic cleaners and welders features * international standard package * glass passivated chips * very short recovery time * extremely low losses at high switching frequencies * low i rm -values * soft recovery behaviour * rohs complian t symbol test conditions characteristic values typ. max. unit t vj =25 o c; v r =v rrm t vj =25 o c; v r =0.8 . v rrm t vj =125 o c; v r =0.8 . v rrm 750 250 7 ua ua ma i r i f =29a; t vj =125 o c t vj =25 o c 2.20 2.55 v v f r thjc 1.0 k/w v r =350v; i f =30a; -di f /dt=240a/us; l<0.05uh; t vj =100 o c t rr i f =1a; -di/dt=100a/us; v r =30v; t vj =25 o c ns i rm a 40 v to for power-loss calculations only 1.65 v r t 18.20 m t vj =t vjm 60 16 _ 18 p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
0. 0 0 1 0 . 0 1 0 .1 1 1 0 0.0 0.2 0.4 0.6 0.8 1.0 s t z thj c k/w 0 200 400 60 0 0 10 20 30 40 50 60 t vj =12 5 c i f =3 0a di f /d t t fr v fr t fr ns 0 200 40 0 60 0 80 0 10 00 12 00 v v fr 0 2 00 4 0 0 6 00 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 -d i f /dt t rr ty p . ma x . 0 4 0 8 0 120 160 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 1. 4 k f q r i rm c t j 0 200 400 600 0 10 20 30 40 50 a max. typ . 1 1 0 1 00 1 000 0 1 2 3 4 5 6 c i rm -di f /d t q r 0 1234 0 10 20 30 40 50 60 70 v v f i f t vj =15 0 c t vj =10 0 c t vj =25 c a i f = 15a i f = 30a i f = 60a i f = 30a v r = 5 40v t vj = 100 c max . ty p. i f = 15a i f = 30a i f = 60a i f = 30a t vj =100 c v r = 540 v v r =54 0 v t vj =1 00 c i f = 15a i f = 30a i f = 60a i f = 30a s a/ s -d i f /d t a/ s a/ s a/ s f ig. 1 f orward current f ig. 2 r ecovery charge vers us -di f /dt. f ig. 3 p eak revers e current vers us vers us voltage drop. -di f /dt. f ig. 4 dynamic parameters vers us f ig. 5 r ecovery time vers us -di f /dt. f ig. 6 p eak forward voltage junction temperature. vers us di f /dt. f ig. 7 t rans ient thermal impedance junction to cas e. sur29 0 ultra fast recovery epitaxial diodes p3 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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