AP6N3R7MT advanced power n-channel enhancement mode electronics corp. power mosfet 100% r g & uis test bv dss 60v simple drive requirement r ds(on) 3.7m ultra low on-resistance i d 4 130a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t a =25 a i d @t a =70 a i dm a p d @t c =25 w p d @t a =25 w e as single pulse avalanche energy 5 mj t stg t j symbol value unit rthj-c maximum thermal resistance, junction-case 1.2 /w rthj-a maximum thermal resistance, junction-ambient 3 25 /w data and specifications subject to change without notice rating 60 halogen-free product + 20 28.8 23 130 -55 to 150 drain current, v gs @ 10v 3 201601111 1 parameter total power dissipation 3 operating junction temperature range thermal data 5 -55 to 150 pulsed drain current 1 350 storage temperature range 104 total power dissipation 163 parameter drain-source voltage gate-source voltage drain current, v gs @ 10v 3 drain current (chip), v gs @ 10v 4 a p6n3r7 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the pmpak ? 5x6 package is special for dc-dc converters application and the foot print is compatible with so-8 with backside heat sink and lower profile. s s s g pmpa k ? 5x6 d d d d g d s .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - - 3.7 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1.5 - 4 v g fs forward transconductance v ds =10v, i d =20a - 50 - s i dss drain-source leakage current v ds =48v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =20a - 75 120 nc q gs gate-source charge v ds =30v - 16 - nc q gd gate-drain ("miller") charge v gs =10v - 24 - nc t d(on) turn-on delay time v ds =30v - 20 - ns t r rise time i d =20a - 66 - ns t d(off) turn-off delay time r g =6 -62- ns t f fall time v gs =10v - 108 - ns c iss input capacitance v gs =0v - 4080 6530 pf c oss output capacitance v ds =30v - 2600 - pf c rss reverse transfer capacitance f=1.0mhz - 200 - pf r g gate resistance f=1.0mhz - 1.8 - source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =20a, v gs =0v - - 1.3 v t rr reverse recovery time i s =20a, v gs =0 v , - 60 - ns q rr reverse recovery charge di/dt=100a/s - 70 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec; 60 o c/w at steady state. 4.package limitation current is 100a . 5.starting t j =25 o c , v dd =30v , l=0.3mh , r g =25 this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. AP6N3R7MT 2 .
AP6N3R7MT fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 50 100 150 200 250 300 350 0481216 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 9.0v 8.0v 7.0v v g =6.0v t c =25 o c 0 50 100 150 200 250 0246810121416 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 9.0v 8.0v 7.0v v g =6.0v 2 3 4 5 6 7 8 45678910 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =20a t c =25 o c 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =20a v g =10v 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c i d =250ua .
AP6N3R7MT fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. drain current v.s. case fig 12. transfer characteristics temperature 4 0 2 4 6 8 10 12 0 20406080100 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =20a v ds =30v 0 2000 4000 6000 8000 121416181 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 10us 100us 1ms 10ms dc 0 40 80 120 160 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) limited by p acka g e 0 40 80 120 160 200 02468 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v operation in this area limited by r d s(on) t j =-55 o c .
AP6N3R7MT fig 13. typ. drain-source on state fig 14. total power dissipation resistance 5 0 20 40 60 80 100 120 0 50 100 150 t c , case temperature( o c) p d , power dissipation(w) 0 2 4 6 8 0 30 60 90 120 150 i d , drain current (a) r ds(on) (m ) t j =25 o c v gs =10v .
AP6N3R7MT marking information 6 date code (ywwsss) y last digit of the year ww week sss sequence part numbe r 6n3r7 ywwsss .
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