? IRFI4227PBF description this hexfet ? power mosfet is specifically designed for sustain; energy recovery & pass switch applications in plasma display panels. this mosfet utilizes the latest proc essing techniques to achieve low on-resistance per silicon area and low epulse rating. additional features of this mosfet are 150c operating junction temperature and high repetitive peak current capability. these features combine to make this mosfet a highly efficient, robust and reliable device for pdp driving applications 1 2017-04-27 absolute maximum ratings symbol parameter max. units v gs gate-to-source voltage 30 v i d @ t c = 25c continuous drain current, v gs @ 10v 26 a ?? i d @ t c = 100c continuous drain current, v gs @ 10v 17 i dm pulsed drain current ? 100 i rp @ t c = 100c repetitive peak current ? 47 p d @t c = 25c maximum power dissipation 46 w p d @t c = 100c maximum power dissipation 18 linear derating factor 0.37 w/c t j operating junction and ? t stg storage temperature range c ? soldering temperature, for 10 seconds (1.6mm from case) 300 ? mounting torque, 6-32 or m3 screw 10 lbf?in (1.1n?m) ? -40 to + 150 g d s gate drain source features ? advanced process technology ? key parameters optimized for pdp sustain, energy recovery and pass switch applications ? low e pulse rating to reduce power dissipation in pdp sustain, energy recovery and pass switch applications ? low q g for fast response ? high repetitive peak current capability for reliable operation ? short fall & rise times for fast switching ? 150c operating junction temperature for improved ruggedness ? repetitive avalanche capability for robustness and reliability hexfet ? power mosfet to-220 full-pak base part number package type standard pack orderable part number form quantity IRFI4227PBF to-220 full-pak tube 50 IRFI4227PBF thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ? ??? 2.73 r ? ja junction-to-ambient ??? 65 c/w g d s key parameters v ds max 200 v v ds (avalanche) typ. 240 v r ds(on) typ. @ 10v 21 m ? i rp max @ t c = 100c 47 a t j max 150 c
? IRFI4227PBF 2 2017-04-27 notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? starting t j = 25c, l = 0.44mh, r g = 25 ? , i as = 16a. ? pulse width ?? 400s; duty cycle ? 2%. ? r is measured at t j of approximately 90c. ? half sine wave with duty cycle = 0.25, ton=1 sec. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 200 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 240 ??? mv/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 21 25 m ??? v gs = 10v, i d = 17a v gs(th) gate threshold voltage 3.0 ??? 5.0 v ? v gs(th)/ ? t j gate threshold voltage temp. coefficient ??? -11 ??? mv/c i dss drain-to-source leakage current ??? ??? 20 a v ds = 200v, v gs = 0v ??? ??? 1.0 ma ? v ds = 200v,v gs = 0v,t j =150c i gss ? gate-to-source forward leakage ??? ??? 100 na ? v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v gfs forward trans conductance 47 ??? ??? s v ds = 25v, i d = 17a q g total gate charge ??? 73 110 nc ? i d = 17a,v ds = 100v q gd gate-to-drain charge ??? 21 ??? v gs = 10v t d(on) turn-on delay time ??? 17 ??? ns v dd = 100v, v gs = 10v t r rise time ??? 19 ??? i d = 17a t d(off) turn-off delay time ??? 11 ??? r g = 2.5 ?? t f fall time ??? 29 ??? see fig. 22 t st shoot through blocking time 100 ??? ??? ns v dd = 160v,v gs = 15v,r g = 4.7 ?? e pulse energy per pulse ??? 570 ??? j l = 220nh, c = 0.4f, v gs = 15v v dd = 160v, r g = 4.7 ??? t j = 25c ??? 910 ??? l = 220nh, c = 0.4f, v gs = 15v v dd = 160v, r g = 4.7 ??? t j = 100c c iss input capacitance ??? 4600 ??? pf ? v gs = 0v c oss output capacitance ??? 460 ??? v ds = 25v c rss reverse transfer capacitance ??? 91 ??? ? = 1.0mhz c oss eff. effective output capacitance ??? 360 ??? v gs = 0v, v ds = 20v to 160v l d internal drain inductance ??? 4.5 ??? nh ? between lead, 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact v ds = v gs , i d = 250a diode characteristics parameter min. typ. max. units conditions i s @ t c = 25c continuous source current ??? ??? 26 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 100 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c,i s = 17a,v gs = 0v ?? t rr reverse recovery time ??? 93 140 ns t j = 25c ,i f = 17a, v dd = 50v q rr reverse recovery charge ??? 350 520 nc di/dt = 100a/s ?? avalanche characteristics ? parameter typ. max. units e as single pulse avalanche energy ?? ??? 54 e ar repetitive avalanche energy ? ??? 4.6 v ds(avalanche) repetitive avalanche voltage ? 240 ??? v i as avalanche current ? ??? 16 a mj
? IRFI4227PBF 3 2017-04-27 fig. 2. typical output characteristics fig. 3. typical transfer characteristics fig. 4. normalized on-resistance vs. temperature fig. 1. typical output characteristics fig 6. typical e pulse vs. drain current 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 25c 7.0v vgs top 15v 10v 8.0v bottom 7.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 150c 7.0v vgs top 15v 10v 8.0v bottom 7.0v 3.0 4.0 5.0 6.0 7.0 8.0 v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 1000.0 i d , d r a i n - t o - s o u r c e c u r r e n t ? ? ) v ds = 25v ? 60s pulse width t j = 25c t j = 150c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 17a v gs = 10v 110 120 130 140 150 160 170 v ds, drain-to -source voltage (v) 100 200 300 400 500 600 700 800 900 1000 e n e r g y p e r p u l s e ( j ) l = 220nh c = 0.4f 100c 25c fig 5. typical e pulse vs. drain-to-source voltage 130 140 150 160 170 180 190 i d, peak drain current (a) 0 200 400 600 800 1000 e n e r g y p e r p u l s e ( j ) l = 220nh c = variable 100c 25c
? IRFI4227PBF 4 2017-04-27 fig 11. maximum drain current vs. case temperature fig 9. typical capacitance vs.drain-to-source voltage fig 12. maximum safe operating area fig. 7. typical e pulse vs. temperature 25 50 75 100 125 150 temperature (c) 0 200 400 600 800 1000 1200 1400 e n e r g y p e r p u l s e ( j ) l = 220nh c= 0.4f c= 0.3f c= 0.2f 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a in c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1 10 100 1000 v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20406080100120 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 160v v ds = 100v v ds = 40v i d = 17a fig 8. typical source-drain diode forward voltage 25 50 75 100 125 150 t c , casetemperature (c) 0 10 20 30 i d , d r a i n c u r r e n t ( a ) 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1sec 10sec operation in this area limited by r ds (on) 100sec fig 10. typical gate charge vs. gate-to-source voltage
? IRFI4227PBF 5 2017-04-27 fig. 14. maximum avalanche e nergy vs. temperature fig. 15. threshold voltage vs. temperature fig. 13. on-resistance vs. gate voltage 5 6 7 8 9 10 v gs , gate-to-source voltage (v) 0.00 0.04 0.08 0.12 0.16 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) t j = 25c t j = 125c i d = 17a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 40 80 120 160 200 240 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 2.5a 3.0a bottom 16a -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 25 50 75 100 125 150 case temperature (c) 0 20 40 60 80 r e p e t i t i v e p e a k c u r r e n t ( a ) ton= 1s duty cycle = 0.25 half sine wave square pulse 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig. 16. typical repetitive peak current vs. case temperature fig 17. maximum effective transient thermal impedance, junction-to-case ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ? c ? c ci= ? i ? ri ci= ? i ? ri ri (c/w) ? i (sec) ? 0.9085 0.105329 1.3717 2.0127 0.44978 0.000177
? IRFI4227PBF 6 2017-04-27 ? fig 19a. unclamped inductive test circuit fig 19b. unclamped inductive waveforms fig 20a. gate charge test circuit fig 20b. gate charge waveform fig 18. diode reverse recovery test circuit for n-channel hexfet? power mosfets
? IRFI4227PBF 7 2017-04-27 ? fig 21a. t st and e pulse test circuit fig 21b. t st test waveforms fig 22a. switching time test circuit fig 22b. switching time waveforms fig 21c. e pulse test waveforms
? IRFI4227PBF 8 2017-04-27 ? to-220 full-pak package outline (dimensions are shown in millimeters (inches)) to-220 full-pak part marking information to-220ab full-pak packages are not reco mmended for surface mount application. note: for the most current drawing please refer to website at http://www.irf.com/package/
? IRFI4227PBF 9 2017-04-27 ? qualification information? qualification level ? industrial (per jedec jesd47f) ? to-220 full-pak n/a rohs compliant yes moisture sensitivity level ? ? applicable version of jedec standar d at the time of product release. trademarks of infineon technologies ag hvic?, ipm?, pfc?, au-convertir?, aurix?, c166?, canpak?, ci pos?, cipurse?, cooldp?, coolgan?, coolir?, coolmos?, coolset?, coolsic?, dave?, di-pol?, directfet?, drbl ade?, easypim?, econobridge?, econodual?, ec onopack?, econopim?, eicedriver?, eupec?, fcos?, ganpowir?, hexfet?, hitfet?, hybridpack?, imotion?, iram?, isofac e?, isopack?, ledrivir?, litix?, mipaq?, modstack?, my-d?, nov alithic?, optiga?, optimos?, origa?, powiraudio?, powi rstage?, primepack?, primestack?, profet?, pro-sil?, rasic?, real3?, smartlewis?, s olid flash?, spoc?, strongirfet?, supirbuck?, tempfe t?, trenchstop?, tricore?, uhvic?, xhp?, xmc? trademarks updated november 2015 other trademarks all referenced product or service names and trademarks are the property of their respective owners. edition 2016-04-19 published by infineon technologies ag 81726 munich, germany ? 2016 infineon technologies ag. all rights reserved. do you have a question about this document? email: erratum@infineon.com document reference ifx1 important notice the information given in th is document shall in no event be regarded as a guarantee of conditions or characteristics (?bescha ff enheitsgarantie?) . with respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer?s products and any use of the product of infineon technologies in customer?s applications. the data contained in th is document is exclusively intended for technically trained sta ff . it is the responsibility of customer?s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies off ice ( www.infineon.com ). please note that this product is not qualified according to the aec q100 or aec q101 documents of the automotive electronics council. warnings due to technical requirements products may contain dangerous substanc es. for information on the types in question please contact your nearest infineon technologies o ff ice. except as otherwise explicitly approved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technologies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. revision history date comments 04/27/2017 ?? changed datasheet with infineon logo - all pages. ?? corrected package outline on page 8. ?? added disclaimer on last page.
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