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november 2014 docid0 26447 rev 2 1 / 13 this is information on a product in full production. www.st.com STW40N95K5 n - channel 950 v, 0.110 ? typ., 38 a mdmesh? k5 power mosfet in a to - 247 package datasheet - producti on data figure 1 : internal schematic diagram features order code v ds r ds(on) max i d p tot STW40N95K5 950 v 0.130 38 a 450 w ? industrys lowest r ds(on) x area ? industrys best figure of merit (fom) ? ultra low gate charge ? 100% avalanche tested ? zener - protected applications ? switc hing applications description this very high voltage n - channel power mosfet is designed using mdmesh? k5 technology based on an innovative proprietary vertical structure. the result is a dramatic reduction in on - resistance and ultra - low gate charge for applications requiring superior power density and high efficiency. table 1: device summary ord er code marking package packaging STW40N95K5 40n95k5 to - 247 tube 1 2 3 t o-247
contents STW40N95K5 2 / 13 docid026447 rev 2 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 9 4 package mechanical data ................................ ............................. 10 4.1 to - 247 package information ................................ ........................... 10 5 revision history ................................ ................................ ............ 12
STW40N95K5 electrical ratings docid026447 rev 2 3 / 13 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 30 v i d drain current (continuous) at t c = 25 c 38 a i d drain current (continuous) at t c = 100 c 24 a i dm (1) drain current (pulsed) 152 a p tot total dissipation at t c = 25 c 450 w i ar max current during repetitive or single pulse avalanche 13 a e as single pulse avala nche energy (starting t j = 25 c, i d = 13 a, v dd = 50 v) 700 mj dv/dt (2) peak diode recovery voltage slope 4.5 v/ns dv/dt (3) mosfet dv/dt ruggedness 50 v/ns t j t stg operating junction t emperature storage temperature - 55 to 150 c notes: (1) pulse width limited by safe operating area. (2) i sd 19 a, di/dt 100 a/s, v ds(peak) v (br)dss. (3) v ds 760 v table 3: thermal data symbol parameter value unit r thj - case thermal resistance jun ction - case max 0.28 c/w r thj - amb thermal resistance junction - amb max 50 c/w
electrical characteristics STW40N95K5 4 / 13 docid026447 rev 2 2 electrical characteristics (t case =25 c unless otherwise specified) table 4: on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0, i d = 1 ma 950 v i dss zero gate voltage drain current v gs = 0, v ds = 950 v 1 a v gs = 0, v ds = 950 v, t c =125 c 50 a i gss gate - body leakage current v ds =0, v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 19 a 0.110 0.130 table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs =0, v ds =100 v, f=1 mhz - 3300 - pf c oss output capacitance - 250 - pf c rss reverse transfer capacitance - 2 - pf c o(tr) (1) equivalent capacitance time related v gs = 0, v ds = 0 to 760 v - 398 - pf c o(er) (2) equivalent capacitance energy related - 142 - pf r g intrinsic gate resistance f = 1 mhz, i d =0 - 5 - q g total gate charge v dd = 760 v, i d = 38 a v gs =10 v (see figure 16: "gate charge test circuit" ) - 93 - nc q gs gate - source charge - 18.7 - nc q gd gate - drain charge - 63.4 - nc notes: (1) time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss (2) energy related is defined as a constant equivalent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss ta ble 6: switching times symbol parameter test conditions min. typ. max unit t d(on) turn - on delay time v dd = 475 v, i d = 19 a, r g = 4.7 , v gs = 10 v (see figure 15: "switching times test circuit for resistive load" ) - 33.5 - ns t r rise time - 51 - ns t d(off) turn - off - delay time - 91.5 - ns t f fall time - 10 - ns
STW40N95K5 electrical characteristics docid026447 rev 2 5 / 13 table 7: source drain diode s ymbol parameter test conditions min. typ. max unit i sd source - drain current - 38 a i sdm (1) source - drain current (pulsed) - 152 a v sd (2) forward on voltage i sd = 38 a, v gs = 0 - 1 .5 v t rr reverse recovery time i sd = 38 a, di/dt = 100 a/s v dd = 60 v (see figure 18: " unclamped inductive load test circuit" ) - 706 ns q rr reverse recovery charge - 22 c i rrm reverse recovery current - 62 a t rr reverse recovery time i sd = 38 a, di/dt = 100 a/s v dd = 60 v t j = 150 c (see figure 18: " unclamped inductive load test circuit" ) - 886 ns q rr reverse recovery charge - 28.2 c i rrm reverse recovery current - 64 a notes: (1) pulse width limited by safe operating area. (2) pulsed: pulse duration = 300 s, duty cycle 1.5% table 8: gate - source zener diode symbol parameter test conditions min typ. max. unit v (br)gso gate - source breakdown voltage i gs = 1ma, i d =0 30 - - v the built - in back - to - back zener diodes have specifically been designed to enhance the device's esd capability. in this respect the zener voltage is appropriate to achieve an efficient and cost - effective intervention to protect the device's integrity . these integrated zener diodes thus avoid the usage of external components.
electrical characteristics STW40N95K5 6 / 13 docid026447 rev 2 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gat e - source voltage figure 7 : static drain - source on - resistance 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 single pulse =0.5 z th =k r thj-c =tp/ t t p t am09125v1
STW40N95K5 electrical characteristics docid026447 rev 2 7 / 13 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalized on - resistance figure 11 : normalized v(br)dss vs temperature figure 12 : output capacitance stored energy figure 13 : source - drain diode forward characteristics v (br)dss 0.96 -50 0 100 t j (c) 50 (norm) 0.88 0.92 1.00 1.04 1.08 i d = 1m a 1.12 gipd12 1 120141041fsr r ds(on) 1 -50 0 100 t j (c) 50 (norm) 0.2 0.6 1.4 1.8 2.2 v gs = 10v 2.6 gipd12 1 120141039fsr
electrical characteristics STW40N95K5 8 / 13 docid026447 rev 2 figure 14 : maximum avalanche energy vs t j e as 400 -50 0 100 t j (c) 50 (mj) 0 200 600 single pulse i d = 13 a v dd = 50v gipd14 1 120141040fsr
STW40N95K5 test circuits docid026447 rev 2 9 / 13 3 test circuits figure 15 : switching times test circuit for resistive load figure 16 : gate charge test circuit figure 17 : test circuit for inductive load switching and diode recovery times figure 18 : unclamped induct ive load test circuit figure 19 : unclamped inductive waveform figure 20 : switching time waveform
package mechanical data STW40N95K5 10 / 13 docid026447 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.s t.com . ecopack ? is an st trademark. 4.1 to - 247 package information figure 21 : to - 247 drawing
STW40N95K5 package mechanical data docid026447 rev 2 11 / 13 table 9: to - 247 mechanical data dim. mm. min. typ. max. a 4.85 5.1 5 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ?p 3.55 3.65 ?r 4.50 5.50 s 5.30 5.50 5.70
revision history STW40N95K5 12 / 13 docid026447 rev 2 5 revision history table 10: document revision history date revision changes 03 - jun - 2014 1 first release. 14 - nov - 2014 2 document status promoted from preliminary to production data. added section 2.1: "electrical characteristics (curves)" .
STW40N95K5 docid026447 rev 2 13 / 13 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the righ t to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of order acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for applicati on assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st f or such prod uct. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics C all rights reserved

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