thin-film cascadable amplifier 10 to 1000 mhz technical data features ? frequency range: 10 to 1000 mhz ? modamp silicon monolithic gain stages ? high gain: 27.0 db (typ) ? low vswr applications ? if/rf amplification description the utm-1057 contains three monolithic microwave integrated circuits mounted on a thin-film substrate to provide an rf amplifier suitable for wideband, high-gain applications. internal blocking capacitors couple the rf through this three-stage amplifier. the utm-1057 is available in the to-8 hermetic package. utm-1057 pin configuration utmto-8t schematic maximum ratings parameter maximum dc voltage +17 volts continuous rf input power +20 dbm operating case temperature C55 to +100 c storage temperature C62 to +150 c r series burn-in temperature +100 c thermal characteristics 1 q jc 100/90/90 c/w 2 active transistor power dissipation 175/300/480 mw 2 junction temperature above case temperature 18/27/43 c 2 mtbf (mil-hdbk-217e, a uf @ 90 c) 161,700 hrs. notes: 1. values refer to 1st, 2nd, 3rd stage transistors respectively. ground case ground v + rf out rf in gain db rf out rf in v+ weight: (typical) utm2.1 grams
2 electrical specifications (measured in 50 w system @ +15 vdc nominal unless otherwise noted) symbol unit t c = e55 to +85 c 10-1000 25.0 2.0 7.5 +12.5 1.7:1 1.7:1 ? ? ? ? mhz db db db dbm ? ? dbm dbm dbm ma t c = 0 to 50 c guaranteed specifications typical t c = 25 c 10-1000 27.0 0.9 5.5 +15.5 1.4:1 1.3:1 +29.0 +42.0 +48.0 170 10-1000 26.0 2.0 6.5 +14.0 1.7:1 1.7:1 ? ? ? ? characteristic frequency range small signal gain (min.) gain flatness (max.) noise figure (max.) power output @ +1 db comp. (min.) input vswr (max.) output vswr (max.) two tone 3rd order intercept point two tone 2nd order intercept point one tone 2nd harmonic intercept point dc current bw gp ? nf p 1db ? ? ip 3 ip 2 hp 2 i d typical performance over temperature (@ +15 vdc unless otherwise noted) key: +25 c +85 c -55 c 29 gain, db 10 gain frequency, mhz 200 28 400 800 1000 27 600 noise figure, db frequency, mhz noise figure 6 5 4 3 26 10 200 400 800 1000 600 1200 1200 7
25 power output
@ 1 db gain
compression, dbm power output frequency, mhz vswr input vswr frequency, mhz vswr output vswr frequency, mhz 18 2.0 1.0 1.75 16 40 ip 3 , dbm third-order intercept point frequency, mhz 10 second-order intercept point frequency, mhz second-harmonic intercept point frequency, mhz 200 60 55 600 25 400 800 30 1000 45 35 ip 2 , dbm hp 2 , dbm 14 50 40 50 12 2.0 1.0 35 45 40 10 200 400 800 600 1000 1200 1.5 1.25 10 200 400 800 600 1000 1200 1.75 1.5 1.25 10 200 400 800 600 1000 1200 1200 10 200 600 400 800 1000 1200 10 200 600 400 800 1000 1200 20 35
20 30
3 automatic network analyzer measurements frequency vswr gain phase group delay vswr mhz in db dev ns out numerical readings bias = 15.00 volts 100.0 1.05 27.60 e2.30 .00 1.14 200.0 1.05 27.49 e1.39 .66 1.16 300.0 1.06 27.27 e.62 .66 1.18 400.0 1.06 27.06 .63 .65 1.21 500.0 1.05 27.11 1.84 .65 1.24 600.0 1.07 27.48 3.48 .68 1.22 700.0 1.15 27.46 2.76 .72 1.24 800.0 1.20 27.52 .95 .74 1.25 900.0 1.26 27.55 e.81 .76 1.21 1000.0 1.34 27.28 e4.54 .80 1.11 1100.0 1.43 26.74 .80 1.07 1200.0 1.53 26.07 .79 1.27 1300.0 1.65 25.02 .74 1.62 1400.0 1.70 23.82 .76 1.82 1500.0 1.71 23.06 .80 2.54 1600.0 1.75 21.50 .77 3.34 1700.0 1.80 19.76 .73 4.29 1800.0 1.82 17.35 .67 5.03 1800.0 1.75 15.42 .60 5.34 2000.0 1.66 13.42 .00 5.57 (typical production unit @ +25 c ambient) s-parameters s 21 100.00 .008 114.1 27.481 156.1 e48.333 19.4 .063 2.7 200.00 .019 71.2 27.369 130.1 e54.226 e30.7 .076 11.8 300.00 .028 62.1 27.334 108.1 e59.069 e56.6 .085 11.6 400.00 .036 60.9 27.044 83.6 e55.500 e53.7 .094 10.4 500.00 .025 61.7 27.153 60.4 e58.835 e4.4 .108 e6.7 600.00 .015 108.1 27.207 38.7 e53.476 e7.4 .106 e6.0 700.00 .077 101.7 27.355 10.7 e53.406 e59.9 .109 5.0 800.00 .082 99.9 27.463 e14.4 e52.683 e43.3 .119 e13.2 900.00 .095 99.0 27.429 e41.3 e53.902 e69.2 .104 e36.1 1000.00 .130 89.5 27.363 e69.8 e52.103 e53.8 .060 e65.7 1100.00 .165 84.9 26.608 e99.6 e52.052 e80.9 .033 161.3 1200.00 .202 74.7 26.158 e128.6 e55.613 e49.7 .121 113.0 1300.00 .241 66.5 25.094 e155.9 e62.287 e98.2 .226 88.4 1400.00 .272 54.2 23.788 176.9 e55.422 37.3 .334 60.2 1500.00 .251 40.3 22.988 150.6 e48.524 e32.6 .412 50.9 1600.00 .268 33.5 21.404 121.2 e49.941 e54.1 .551 31.9 1700.00 .263 27.5 19.688 95.8 e53.413 e108.7 .625 12.2 1800.00 .273 21.7 17.533 71.2 e54.797 e21.7 .662 e5.3 1900.00 .264 12.6 15.331 49.3 e55.126 e18.8 .687 e18.7 2000.00 .242 6.4 13.173 30.1 e52.753 e34.2 .707 e30.5 frequency mhz mag ang db ang db ang mag ang s 11 s 22 s 12 linearization range: 100.0 to 1000.0 mhz bias = 15.00 volts
notes (unless otherwise specified): 1. dimensions are specified in inches 2. tolerances: xx .02 xxx .010 product options uto C 509r screening option
blank = no screening
r = r-series screening
for more information on r-series screening,
see reliability screening, pub. 5963-3240e. model number prefix
uto-
utm-
ppa- model number utc ?509-1 connector option
for tc-1 case the only connector option
available is the -1. the -1 option consists
of a sma female connector on both the
input and output (see note). model number prefix
utc- model number note: r-series screening is not available in the tc-1 case as the case is non-hermetic. case drawings to-8t .031 .031 .50
dia .450
dia max .200 .017 0.185
0.015 +.002 - 001 .150
typ .300
typ ground case
ground v .150
typ 3 4 2 1 45 approximate weight 2.1 grams + rf in rf out glass ring
.060 dia typ
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