, u na. 2 0 ster n ave . springfield , ne w jerse y 0708 1 us a 2 n 278 4 npi m silico n transisto r telephone : (973 ) 376-292 2 (212 ) 227-600 5 fax : (973 ) 376-896 0 mechanica l dat a termina l connections : lea d 1 emitte r lea d 2 bas e lea d 3 collecto r (electricall y connecte d t o case ) case : jede c to-1 8 electrica l dat a "ce o 1 5 volt s 6. 0 volt s 4. 0 volt s absolut e maximu m ratings : collecto r t o bas e voltage v cb o . collecto r t o emitte r voltag e emitte r t o bas e voltag e v eb o tota l devic e dissipatio n @ cas e temperatur e 25 c 0.8 8 watt s @ cas e temperatur e 100 ' c 0. 5 watt s @ fre e ai r temperatur e 25' c 0. 3 watt s junctio n temperatur e (operating ) 65 c t o - t 200 c storage temperatur e 65 c t o +300 c electrica l characteristics : @25 paramete r collecto r t o bas e breakdow n voltag e collecto r t o emitte r breakdown voltag e a emitte r t o bas e breakdow n voltag e collecto r cutof f curren t collecto r cutof f curren t collecto r revers e curren t bas e curren t d c curren t gai n a d c curren t gai n a d c curren t gai n collecto r t o emitte r saturatio n voltage bas e t o emitte r saturatio n voltage collecto r capacitanc e inpu t capacitanc e hig h frequenc y curren t gai n charg e storage,time constan t turn-o n tim e turn-of f tim e a measure d wit h 30 0 psec , 2 % dut y cycl e puls e c (unles s sym . bv cn o bv ce o bv eb o 'cb o 'cbo j 'ce x i b h fe i h m n fe l v ce (sat ) v b e is.i l co b cl b h, . r t ?. * *of f otherwis e noted ) condition s min . l c = 10/i a 1 5 l c 1 0 m a 6. 0 l f 1 0 /i a 4. 0 v c8 =5. 0 v v cg =5v , ta=-fl50 c .. . v ce =6. 0 v . v c ,=0. 4 v v ce =6. 0 v , v ei 0, 4 v v ce =0. 5 v , l c =1 0 m a 4 0 i v ce =1.0v . l c =30m a 2 0 v ce =0. 5 v , l c =1 0 ma , 1 0 ta = 55 " c l c =3. 0 ma , i b =0.1 5 m a .. . l c =3. 0 ma , i b =0,1 5 m a 0.7 0 v ci) = 5 v , i e = 0 m a .. . v fl) =0. 5 v , \~0 m a v re =4. 0 v , 1^=5. 0 ma , 1 0 f=10 0 m e l c= : lr.-lrj=5. 0 m a (se e fig . 1 ) l r =1 0 ma , i b |-2. 0 ma , l,' ? =1. 0 m a (se e fig . 2 ) l c =1 0 ma , | g| =l h =l. o m a (se e fig . 2 ) typ . max . 5. 0 5. 0 1 0 1 0 12 0 . 0.2 6 0.8 5 3. 0 2. 0 5. 0 9. 0 9. 0 unit s volt s volt s volt s n a /' a n a n a volt s volt s p f p f m e nse c nse c nse c \ n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f aoin e t o press . however . n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . " n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
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