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  vishay siliconix SI4831BDY document number: 70483 s09-0394-rev. b, 09-mar-09 www.vishay.com 1 p-channel 30-v (d-s) mosfet with schottky diode features ? halogen-free according to iec 61249-2-21 available ? little foot ? plus power mosfet ? 100 % r g tested applications ? hdd ? asynchronous rectification mosfet product summary v ds (v) r ds(on) ( )i d (a) a q g (typ.) - 30 0.042 at v gs = - 10 v - 6.6 7.8 0.065 at v gs = - 4.5 v - 5.3 schottky product summary v ka (v) v f (v) diode forward voltage i d (a) a 30 0.53 v at 3 a 3.0 ak a k sd g d so- 8 5 6 7 8 top v ie w 2 3 4 1 orderin g information: si4 8 31bdy-t1-e3 (lead (p b )-free) si4 8 31bdy-t1-ge3 (lead (p b )-free and halogen-free) k a s g d p-channel mosfet notes: a. based on t c = 25 c. b. surface mounted on fr4 board. c. t 10 s. d. maximum under steady state conditions is 110 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage (mosfet) v ds - 30 v reverse voltage (schottky) v ka - 30 gate-source voltage (mosfet) v gs 20 continuous drain current (t j = 150 c) (mosfet) t c = 25 c i d - 6.6 a t c = 70 c - 5.2 t a = 25 c - 5.1 b, c t a = 70 c - 3.9 b, c pulsed drain current (mosfet) i dm - 30 continuous source current (mosfet diode conduction) t c = 25 c i s - 2.7 t a = 25 c - 1.6 b, c average forward current (schottky) i f - 3 b pulsed forward current (schottky) i fm - 20 maximum power dissipation (mosfet and schottky) t c = 25 c p d 3.3 w t c = 70 c 2.1 t a = 25 c 2.0 b, c t a = 70 c 1.2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambi ent (mosfet and schottky) b, c, d r thja 53 62.5 c/w maximum junction-to-foot (d rain) (mosfet and schottky) r thjf 30 37
www.vishay.com 2 document number: 70483 s09-0394-rev. b, 09-mar-09 vishay siliconix SI4831BDY notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. mosfet specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v ds = 0 v, i d = - 250 a - 30 v v ds temperature coefficient v ds/tj i d = 250 a - 30 mv/c v gs(th) temperature coefficient v gs(th)/tj 3.6 gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1 - 3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 30 v, v gs = 0 v - 1 a v ds = - 30 v, v gs = 0 v, t j = 75 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 10 v - 10 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 5 a 0.034 0.042 v gs = - 4.5 v, i d = - 3 a 0.052 0.065 forward transconductance a g fs v ds = - 15 v, i d = - 5 a 11 s dynamic b input capacitance c iss v ds = - 15 v, v gs = 0 v, f = 1 mhz 625 pf output capacitance c oss 150 reverse transfer capacitance c rss 115 total gate charge q g v ds = - 15 v, v gs = - 10 v, i d = - 5 a 17 26 nc v ds = - 15 v, v gs = - 4.5 v, i d = - 5 a 7.8 12 gate-source charge q gs 1.6 gate-drain charge q gd 3.5 gate resistance r g f = 1 mhz 7 14 tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 3 i d ? - 5 a, v gen = - 4.5 v, r g = 1 35 55 ns rise time t r 100 150 turn-off delay time t d(off) 22 35 fall time t f 12 20 tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 3 i d ? - 5 a, v gen = - 10 v, r g = 1 816 rise time t r 816 turn-off delay time t d(off) 24 40 fall time t f 714 drain-source body diode characteristics continous source-drain diode current i s t c = 25 c - 3.3 a pulse diode forward current a i sm - 30 body diode voltage v sd i s = - 1.4 a, v gs = 0 v - 0.78 - 1.2 v body diode reverse recovery time t rr i f = - 2 a, di/dt = 100 a/s, t j = 25 c 30 45 ns body diode reverse recovery charge q rr 15 25 nc reverse recovery fall time t a 14 ns reverse recovery rise time t b 16
document number: 70483 s09-0394-rev. b, 09-mar-09 www.vishay.com 3 vishay siliconix SI4831BDY stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. schottky specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit forward voltage drop v f i f = 3 a 0.485 0.53 v i f = 3 a, t j = 125 c 0.42 0.47 maximum reverse leakage current i rm v r = 30 v 0.008 0.1 ma v r = 30 v, t j = 75 c 0.4 5 v r = 30 v, t j = 125 c 6.5 20 junction capacitance c t v r = 15 v 102 pf
www.vishay.com 4 document number: 70483 s09-0394-rev. b, 09-mar-09 vishay siliconix SI4831BDY mosfet typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 v gs = 10 thru 5 v v ds - drain-to-source voltage (v) - drain current (a) i d 4 v 3 v 0.00 0.02 0.04 0.06 0.0 8 0.10 0 6 12 1 8 24 30 - on-resistance ( ) i d - drain c u rrent (a) r ds(on) v gs = 4.5 v v gs = 10 v i d = 5 a 0 2 4 6 8 10 0 3.6 7.2 10.8 14.4 18.0 - gate-to-source voltage (v) q g - total gate charge (nc) v gs v ds = 10 v v ds = 20 v v ds = 15 v transfer characteristics capacitance on-resistance vs. junction temperature 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.8 1.6 2.4 3.2 4.0 t j = 125 c v gs - gate-to-source voltage (v) - drain current (a) i d t j = 25 c - 55 c c iss c rss c oss 0 200 400 600 800 1000 0 6 12 18 24 30 v ds - drain-to-source voltage (v) c - capacitance (pf) ( n ormalized) - on-resistance r ds(on) 0.6 0.9 1.2 1.5 1. 8 - 50 - 25 0 25 50 75 100 125 150 t j - j u nction temperat u re (c) v gs = 4.5 v v gs = 10 v i d = 5 a
document number: 70483 s09-0394-rev. b, 09-mar-09 www.vishay.com 5 vishay siliconix SI4831BDY mosfet typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0 1 10 100 0.0 0.3 0.6 0.9 1.2 1.5 t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s t j = 25 c - 0.3 - 0.1 0.1 0.3 0.5 - 50 - 25 0 25 50 75 100 125 150 t j - temperature (c) v gs(th) variance (v) i d = 5 ma i d = 250 a on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient v gs - gate-to-so u rce v oltage ( v ) 0 0.04 0.0 8 0.12 0.16 0.20 01234567 8 910 t a = 25 c - on-resistance ( ) r ds(on) t a = 125 c i d = 5 a 0 12 24 36 4 8 60 0.001 0.01 0.1 1 10 time (s) po w er ( w ) safe operating area, junction-to-case 1 0.1 1 10 100 0.01 10 1 ms - drain c u rrent (a) i d 0.1 t a = 25 c single p u lse 10 ms 100 ms v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified limited b y r ds(on) * 100 dc 1 s 10 s
www.vishay.com 6 document number: 70483 s09-0394-rev. b, 09-mar-09 vishay siliconix SI4831BDY mosfet typical characteristics 25 c, unless otherwise noted * the power dissipation pd is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 2 3 5 6 8 0 25 50 75 100 125 150 t c - case temperature (c) i d - drain current (a) power derating, junction-to-foot 0.0 0.8 1.6 2.4 3.2 4.0 0 25 50 75 100 125 150 t c - case temperature (c) power dissipation (w) power derating, junction-to-ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 t a - am b ient temperat u re (c) po w er dissipation ( w )
document number: 70483 s09-0394-rev. b, 09-mar-09 www.vishay.com 7 vishay siliconix SI4831BDY mosfets typical characteristics 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 0 0 0 1 10 1 10 -1 10 -4 100 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 65 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. s u rface mo u nted single p u lse 0.2 0.1 0.05 0.02 d u ty cycle = 0.5 0.01 0.1 1 normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 0.05 0.02 single p u lse
www.vishay.com 8 document number: 70483 s09-0394-rev. b, 09-mar-09 vishay siliconix SI4831BDY schottky typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70483 . reverse current vs. junction temperature 0.0001 0.001 0.01 0.1 1 10 100 0 25 50 75 100 125 150 - reverse current (a) i r t j - temperature (c) 10 v 30 v forward voltage drop 0.0 0.1 0.2 0.4 0.5 0.6 t j = 150 c 10 v f - forward voltage drop (v) - forward current (a) i f 1 t j = 25 c 0 capacitance 0 100 200 300 400 500 0 6 12 18 24 30 v ka - reverse voltage (v) c - capacitance (pf) t
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.


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