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cha3689 - 99f rohs compliant ref. : dscha36891035 - 07 feb 11 1 / 16 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - bp46 - 91401 orsay cedex france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 12.5 - 30ghz low noise amplifier gaas monolithic microwave ic description t he cha3689 - 99f is a three - stage self biased wide band monolithic low noise amplifier. it is designed for a wide range of applications, from military to commercial communication systems. the circuit is manufactured with a phemt process, 0.25m gate length, via holes through t he substrate, air bridges and electron beam gate lithography. it is available in chip form . main features on wafer typical measurements @ 120ma main characteristics tamb = +25c, vd1=vd2=vd3 = +4v pads b, d = gnd (high current configuration) symbol parameter min typ max unit freq frequency range 12.5 30 ghz gain linear gain 26 db nf noise figure 2 2.6 db pout 1db output power @1db comp. 14 15 dbm gain nf rfin rfout vd1 vd2 vd3 b d rfin rfout vd1 vd2 vd3 b d
cha3689 - 99f 12.5 - 30ghz low noise amplifier ref. : dscha36 891035 - 07 feb 11 2 / 16 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 main characteristics (low current configuration) tamb = +25c, vd1=vd2=vd3= +4v pads b, d = not connected symbol parameter min typ max unit freq frequency range 12.5 30 ghz gain gain (12.5 - 24ghz) gain (24.5 - 30ghz) 23 20 26 22 db db g gain flatness (12.5 - 24ghz) gain flatness (24.5 - 30ghz) 2.5 2 db db nf noise figure (12.5 - 24ghz) noise figure (24.5 - 30ghz) 1.8 2.0 2.3 2.5 db db s11 input return loss (12.5 - 16 ghz) (27 - 30ghz) input return loss (16 - 27ghz) 3.0:1 2.0:1 3.5:1 2.5:1 db db s22 output return loss 2.5:1 3.0:1 db oip3 3rd order intercept point (18 C 30ghz) 23 24 dbm p1db output power at 1db gain compression 13 14 dbm id drain bias current 90 120 ma vd drain bias voltage 4 v these values are representative of on - wafer measurements that are made without bonding wires at the rf ports. main characteristics ( high current configuration) tamb = +25c, vd1=vd2=vd3= +4v pads b, d = gnd symbol parameter min typ max unit freq frequency range 12.5 30 ghz gain gain (12.5 - 24ghz) gain (24.5 - 30ghz) 24 21 27 23 db db g gain flatness (12.5 - 24ghz) gain flatness (24.5 - 30ghz) 2.5 2 db db nf noise figure (12.5 - 24ghz) noise figure (24.5 - 30ghz) 1.9 2.1 2.4 2.6 db db s11 input return loss (12.5 - 16ghz) (27 - 30ghz) input return loss (16 - 27ghz) 3.0:1 2.0:1 3.5:1 2.5:1 db db s22 output return loss 2.5:1 3.0:1 db oip3 3rd order intercept point (18 C
12.5 - 30ghz low noise amplifier cha3689 - 99f ref. : dscha36891035 - 07 feb 11 3 / 16 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 absolute maximum ratings (1) tamb.= + 25c symbol parameter values unit vd drain bias voltage 4. 5v v pin rf input power +1 0 dbm tj junction temperature 175 c ta operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +155 c (1) operation of this device above anyone of these parameters may cause permanent damage. typical bias conditions tamb.= + 25c symbol parameter values unit vd1 dc drain voltage 4 v vd2 dc drain voltage 4 v vd3 dc drain voltage 4 v b dc gate voltage connected to ground or not d dc gate voltage
cha3689 - 99f 12.5 - 30ghz low noise amplifier ref. : dscha36 891035 - 07 feb 11 4 / 16 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical on - wafer sij parameters for low current configuration tamb = +25c, vd1=vd2=vd3= +4v, id = 90 ma and pads b, d not connected freq (ghz) s11 (db) phs11 () s12 (db) phs12 () s21 (db) phs21 () s22 (db) phs22 () 2.0 - 0.1 - 23 - 67.3 - 16 - 65.4 67 - 0.2 - 30 3.0 - 0.1 - 35 - 61.6 - 160 - 70.6 - 166 - 0.3 - 47 4.0 - 0.2 - 48 - 81.4 132 - 56.0 10 - 0.5 - 66 5.0 - 0.2 - 64 - 60.5 - 176 - 33.7 - 32 - 1.3 - 90 6.0 - 0.3 - 81 - 63.3 - 15 - 16.5 - 89 - 3.3 - 118 7.0 - 0.5 - 106 - 59.5 - 2 - 1.4 - 160 - 8.0 - 147 8.0 - 1.5 - 141 - 61.4 73 7.4 123 - 14.9 - 143 9.0 - 3.9 170 - 55.2 - 83 15.1 54 - 19.6 - 142 10.0 - 6.7 110 - 59.4 - 68 19.5 - 20 - 14.6 - 73 11.0 - 6.5 53 - 61.7 - 76 22.2 - 81 - 11.6 - 108 12.0 - 5.0 7 - 51.4 - 156 23.9 - 137 - 12.2 - 134 13.0 - 4.5 - 26 - 51.6 176 25.1 173 - 12.5 - 153 14.0 - 5.1 - 53 - 49.3 - 136 25.8 126 - 13.1 - 178 15.0 - 5.9 - 67 - 61.1 - 1 26.2 85 - 15.0 155 16.0 - 5.9 - 81 - 44.5 67 27.3 49 - 12.3 147 17.0 - 8.0 - 102 - 47.5 60 27.7 7 - 12.3 121 18.0 - 8.9 - 118 - 47.7 20 28.7 - 30 - 9.9 101 19.0 - 12.8 - 137 - 52.1 7 28.5 - 72 - 8.1 78 20.0 - 15.3 - 150 - 49.2 10 28.4 - 108 - 7.8 56 21.0 - 20.3 - 172 - 59.8 - 56 27.9 - 147 - 7.3 36 22.0 - 25.7 170 - 72.9 24 26.9 180 - 8.2 19 23.0 - 26.6 105 - 55.4 71 26.2 147 - 8.8 9 24.0 - 24.2 47 - 54.5 41 25.1 116 - 9.3 1 25.0 - 22.4 43 - 54.8 13 24.4 88 - 10.2 - 8 26.0 - 18.9 57 - 61.9 - 85 24.1 60 - 12.2 3 27.0 - 12.0 62 - 47.8 177 24.0 26 - 10.1 8 28.0 - 9.2 45 - 63.2 - 179 23.0 - 4 - 9.9 - 1 29.0 - 7.1 27 - 48.4 99 22.2 - 35 - 9.6 - 1 30.0 - 5.4 15 - 49.5 - 2 21.2 - 67 - 9.0 - 2 31.0 - 3.5 0 - 47.3 - 75 19.8 - 100 - 7.9 - 1 32.0 - 2.7 - 15 - 47.6 - 133 17.9 - 133 - 6.7 - 9 33.0 - 2.6 - 29 - 45.0 - 160 15.5 - 162 - 6.1 - 14 34.0 - 2.6 - 38 - 49.3 40 12.9 172 - 5.4 - 22 35.0 - 2.4 - 46 - 38.8 98 10.7 149 - 4.9 - 26 36.0 - 2.4 - 57 - 45.5 124 8.2 129 - 4.4 - 34 37.0 - 2.3 - 64 - 51.5 114 6.2 109 - 4.0 - 40 38.0 - 2.7 - 73 - 46.1 - 96 4.1 92 - 4.0 - 48 39.0 - 3.2 - 76 - 56.0 142 2.4 75 - 4.0 - 54 40.0 - 3.6 - 87 - 47.4 153 1.1 56 - 4.1 - 62
12.5 - 30ghz low noise amplifier cha3689 - 99f ref. : dscha36891035 - 07 feb 11 5 / 16 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical on - wafer sij parameters for high current configuration tamb = +25c, vd1=vd2=vd3= +4v, id = 120 ma and pads b, d grounded freq (ghz) s11 (db) phs11 () s12 (db) phs12 () s21 (db) phs21 () s22 (db) phs22 () 2.0 - 0.1 - 23 - 62.8 - 51 - 59.9 - 140 - 0.2 - 30 3.0 - 0.1 - 35 - 60.7 9 - 58.1 - 121 - 0.3 - 46 4.0 - 0.1 - 48 - 63.5 - 105 - 54.9 31 - 0.5 - 65 5.0 - 0.2 - 63 - 72.0 63 - 33.8 - 31 - 1.2 - 88 6.0 - 0.3 - 80 - 74.5 - 171 - 15.8 - 87 - 3.2 - 115 7.0 - 0.5 - 105 - 66.5 137 - 0.7 - 159 - 8.0 - 142 8.0 - 1.5 - 140 - 57.0 - 133 8.1 124 - 14.6 - 133 9.0 - 3.8 171 - 65.6 - 97 15.7 55 - 17.5 - 128 10.0 - 6.6 112 - 53.8 - 100 20.1 - 18 - 13.4 - 77 11.0 - 6.5 55 - 53.3 - 131 22.7 - 80 - 10.7 - 109 12.0 - 5.0 9 - 52.2 - 152 24.5 - 136 - 11.4 - 134 13.0 - 4.6 - 25 - 59.8 165 25.7 174 - 11.7 - 152 14.0 - 5.2 - 51 - 49.6 84 26.4 127 - 13.3 - 179 15.0 - 6.7 - 67 - 45.7 147 26.6 86 - 14.6 161 16.0 - 6.6 - 76 - 44.7 79 27.3 51 - 13.2 148 17.0 - 7.1 - 100 - 48.0 85 28.4 11 - 12.3 125 18.0 - 9.1 - 115 - 60.5 63 29.0 - 27 - 10.2 107 19.0 - 12.0 - 134 - 59.0 - 25 29.0 - 68 - 8.4 78 20.0 - 14.8 - 142 - 61.1 131 28.8 - 104 - 8.1 56 21.0 - 18.5 - 171 - 56.6 - 81 28.5 - 142 - 7.5 36 22.0 - 23.6 150 - 62.0 18 27.4 - 176 - 8.0 18 23.0 - 26.6 101 - 57.1 174 26.8 152 - 8.7 6 24.0 - 23.6 58 - 59.9 150 25.9 121 - 9.3 - 1 25.0 - 21.8 48 - 56.2 22 25.3 93 - 10.2 - 10 26.0 - 17.3 54 - 56.5 - 113 24.9 64 - 11.9 - 1 27.0 - 12.9 54 - 51.9 139 24.6 32 - 10.8 1 28.0 - 10.1 42 - 49.9 - 2 23.7 1 - 10.1 - 6 29.0 - 7.3 27 - 49.0 33 23.0 - 30 - 10.2 - 3 30.0 - 5.6 12 - 44.7 120 22.1 - 61 - 9.4 - 4 31.0 - 4.0 1 - 53.1 29 20.8 - 95 - 8.4 - 3 32.0 - 3.1 - 14 - 53.6 128 19.1 - 129 - 7.2 - 8 33.0 - 2.8 - 27 - 59.1 - 80 16.6 - 159 - 6.2 - 12 34.0 - 2.8 - 37 - 48.0 99 14.0 174 - 5.6 - 20 35.0 - 2.3 - 46 - 47.2 - 155 11.6 151 - 4.8 - 24 36.0 - 2.5 - 55 - 43.6 141 9.1 130 - 4.3 - 32 37.0 - 2.3 - 65 - 63.3 109 6.8 110 - 4.0 - 39 38.0 - 3.1 - 75 - 45.0 179 4.5 91 - 3.9 - 43 39.0 - 3.3 - 77 - 46.0 101 2.4 75 - 3.9 - 50 40.0 - 3.9 - 85 - 31.5 144 0.7 57 - 3.5 - 54
cha3689 - 99f 12.5 - 30ghz low noise amplifier ref. : dscha36 891035 - 07 feb 11 6 / 16 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical on wafer measurements tamb = +25c, vd1=vd2=vd3= +4v id = 90 ma pads b, d = not connected (low current configuration) gain and return losses versus frequency noise figure versus frequency s21 s11 s22
12.5 - 30ghz low noise amplifier cha3689 - 99f ref. : dscha36891035 - 07 feb 11 7 / 16 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical on wafer measurements tamb = +25c, vd1=vd2=vd3= +4v id = 120 ma pads b, d = gnd (high current configuration) gain and return losses versus frequency noise figure versus frequency s21 s11 s22
cha3689 - 99f 12.5 - 30ghz low noise amplifier ref. : dscha36 891035 - 07 feb 11 8 / 16 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical on wafer measurements tamb = +25c, vd1=vd2=vd3= +4v id = 90/120 ma output power - 1db for low and high current configurations 120ma 90ma
12.5 - 30ghz low noise amplifier cha3689 - 99f ref. : dscha36891035 - 07 feb 11 9 / 16 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical test fixture measurements tamb = - 40c / +25c / +8 5 c , vd1=vd2=vd3= +4v measurements are given in the connectors access plans. losses are not de - embedded. gain measurement for low current configuration pads b, d = not connected gain measurement for high current configuration pads b, d = gnd - 40c +25c +85c - 40c +25c +85c
cha3689 - 99f 12.5 - 30ghz low noise amplifier ref. : dscha36 891035 - 07 feb 11 10 / 16 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical test fixture measurements tamb = - 40c / +25c / +8 5 c , vd1=vd2=vd3= +4v measurements are given in the connectors access plans. losses are not de - embedded. return losses for low current configuration pads b, d = not connected return losses for high current configuration pads b, d = gnd - 40c +25c +85c - 40c +25c +85c dbs11 dbs22 - 40c +25c +85c - 40c +25c +85c dbs11 dbs22
12.5 - 30ghz low noise amplifier cha3689 - 99f ref. : dscha36891035 - 07 feb 11 11 / 16 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical test fixture measurements tamb = - 40c / +25c / +8 5 c , vd1=vd2=vd3= +4v id = 90 ma pads b, d = gnd ( high current configuration) measurements are given in the connectors access plans. losses are not de - embedded. output ip3 versus input power @ 18ghz output ip3 versus input power @ 22ghz output ip3 versus input power @ 26ghz output ip3 versus input power @ 30ghz 18ghz 22ghz 26ghz 30ghz - 40c +25c +85c - 40c +25c +85c - 40c +25c +85c - 40c +25c +85c
cha3689 - 99f 12.5 - 30ghz low noise amplifier ref. : dscha36 891035 - 07 feb 11 12 / 16 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical test fixture measurements tamb = - 40c / +25c / +85c , vd1=vd2=vd3= +4v id = 120 ma pads b, d = not connected ( low current configuration ) measurements are given in the connectors access plans. losses are not de - embedded. output ip3 versus input power @ 18ghz output ip3 versus input power @ 22ghz output ip3 versus input power @ 26ghz output ip3 versus input power @ 30ghz 18ghz 22ghz 26ghz 30ghz - 40c +25c +85c - 40c +25c +85c - 40c +25c +85c - 40c +25c +85c
12.5 - 30ghz low noise amplifier cha3689 - 99f ref. : dscha36891035 - 07 feb 11 13 / 16 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 mechanical data dc pads size: 100/100 m, chip thickness: 100 m chip size : 2.45 x 1.21 x 0.1mm 35m all dimensions are in micrometers
cha3689 - 99f 12.5 - 30ghz low noise amplifier ref. : dscha36 891035 - 07 feb 11 14 / 16 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 recommended assembly plan 25m wedge bonding is preferred note: supply feed should be bypassed. 10 nf b d to ground versus biasing point 120 pf to vdd dc drain supply feed 10 nf b d to ground versus biasing point 120 pf to vdd dc drain supply feed
12.5 - 30ghz low noise amplifier cha3689 - 99f ref. : dscha36891035 - 07 feb 11 15 / 16 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 chip biasing options this chip is self - biased, and flexibility is provided by the access to number of pads. the internal dc electrical schematic is given in order to use these pads in a safe way. the requirement i s not to exceed vds = 3.5volt ( internal drain to source voltage ). we propose two standard biasing s : l ow noise and low consumption: vd = 4v and b, d not connected (nc). idd = 90ma & pout - 1db = 14dbm typical low noise and higher output power: vd = 4v and b, d grounded. idd = 120ma & pout - 1db = 15dbm typical
cha3689 - 99f 12.5 - 30ghz low noise amplifier ref. : dscha36 891035 - 07 feb 11 16 / 16 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums products. ordering information chip form : cha3689 - 99f /00 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent righ ts of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.

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