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features e g n-channel c = ! "#$%& ' ( ) ' #$%&* +,-+. * * ') * ( # ) &*!/01 )( ) '#$%& )' ( +,-+. #$%&2 34 ') 5 (( 6.*789!81 to-247ac ! " # $% " & ' ( ") ' *+ ( , - . ! *+ ! ' # / ! *+ ! ' # / 0# 1 2 3 # 4 3 # 56 , 7)/, )7)/86 8 * 95/ , *, ) :6; 7)<;8 = 4 1 - >>> >>> )?? 4 1 ' >>> >>> )? @= 4 3 565 6 >>> ) >>> 4 1 &: 5a# >>> >>> = = b >>> /7)8 >>> 7c8 www.irf.com 1 downloaded from: http:/// 2 www.irf.com d -b 7 8 e "/ , & d - b 7 8 e , 3( )" d - b 7 8 e f 0'a e / e 4 e , e &5 " 066'a e f? 54 ? ( e ,/ a g g 03 b % e )" e $ $ a) 0663 b % e )f, e 1 3( )f55" 3 b % e ,)?, )/ 0'a e e 5 3( )5" 4 e , e &5 " 066'a e e 54 ? ( e e a g g 3 b % e ?) e 1 $ $ a) % e , e h * 6 # ## e " e 0## e e #( , 3( )? 4$ 6 # e " e i)*hc ' 4$ 4$ a e /, f 3( ) e / / ")& ' !4$ 4$ a e ) ") & 3( ) e /) d ' 4$ 4$ ab e ," 3 ( ) e ,, "" / @&@j @ ' !46(64$ a e ,, e &@j 3 ( ) ' e"e ? !"# e e 5 j& ? ? # 66)6 e ) , e @ 5 )& 3 e ) , ,) & e )f? e & 3( )5 e ) ? e &5 -b b ,) e /) 5 j& ? @ ? # 66)6b b e e @ 5 j& ( / e 3 5 & k - e e j& 5 e e 5 5 ' ( ' # e )/ ,), ")& 3( ), e ) ,) ")&5 - % e e . & . $ !"# downloaded from: http:/// www.irf.com 3 :;1<# = !" #" 1 10 100 5 6 7 8 9 10 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j o t = 150 c j o 0.1 1 10 100 0 5 10 15 20 25 f, frequency (khz) load current (a) for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j power dissipation = w 60% of rated voltage i ideal diodes square wave: 1 10 100 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20s pulse width ge t = 25 c j o t = 150 c j o downloaded from: http:/// 4 www.irf.com $%&&'##"&&( '&) (& $%&& & -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 4.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 10.5 c i = a 21 c i = a 42 c 25 50 75 100 125 150 0 10 20 30 40 50 t , case temperature ( c) maximum dc collector current(a) c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:/// www.irf.com 5 0 10 20 30 40 50 3.0 3.5 4.0 4.5 5.0 r , gate resistance (ohm) total switching losses (mj) g v = 800v v = 15v t = 25 c i = 21a cc ge j c '&) *") *'&) +,")* - +,") (& 0 20 40 60 80 100 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 21a cc c 1 10 100 0 1000 2000 3000 4000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 4 5-4 7 ? ) -60 -40 -20 0 20 40 60 80 100 120 140 160 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 800v g ge cc i = a 42 c i = a 21 c i = a 10.5 c ? downloaded from: http:/// 6 www.irf.com 1 10 100 1000 1 10 100 1000 10000 v = 20v t = 125 c ge j o v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c safe operating area !##+! $%&&,)., +,") '& 1 10 100 024681 0 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c jj j 0 10 20 30 40 50 0 4 8 12 16 i , collector-to-emitter current (a) total switching losses (mj) c r = ohm t = 150 c v = 800v v = 15v g j cc ge ? downloaded from: http:/// www.irf.com 7 -- / - / +") / / / 0 100 200 300 400 500 600 100 1000 f di /dt - (a/s) rr q - (nc) i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c rj j 10 100 1000 100 1000 f di /dt - (a/s) di(rec)m/dt - (a/s) i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c rj j 0 40 80 120 160 200 100 1000 f di /dt - (a/s) t - (ns) rr i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c rj j 1 10 100 100 1000 f di /dt - (a/s) i - (a) irrm i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c rj j downloaded from: http:/// 8 www.irf.com same type device as d.u.t. d.u.t. 430f 80% of vce & 1 4 # + + > # t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5s vce ic dt 90% vge +vge eoff = & ?' 1 38@. + vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt & ?' 1 38@ . + & ?' 1 38@ . + > # downloaded from: http:/// www.irf.com 9 vg gate signal device under tes t current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit figure 18e. macro waveforms for figure 18a's test circuit downloaded from: http:/// 10 www.irf.com notes: repetitive rating: v ge =20v; pulse width limited by maximum junction temperature (figure 20) v cc =80%(v ces ), v ge =20v, l=10h, r g = 10 ? (figure 19) pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 01/06 dimensions are shown in millimeters (inches) to-247ac package is not recommended for surface mount application. downloaded from: http:/// note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ downloaded from: http:/// |
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