MCM1216 p-channel power mosfet features ? epoxy meets ul 94 v-0 flammability rating maximum r atings @ 25 o c unle ss otherwi se specified symbol parameter rating unit v ds drain-source voltage -12 v i d drain curren t-con tinu ous -16 a i d m pulsed drain current (note1) -65 a v gs gate-source voltage 8 v r j a thermal resistance junction to ambient(note4) 50 /w t j operating junction temperature -55 to +150 t stg storage temperature -55 to +150 revision: a 2016/02/03 moisture sensitivity level 1 inches mm dim mi nmax mi nmax note dfn2020-6j ? advanced trench mosfet process technology ? ultra low on-resistance with low gate charge ? h alogen free available upon request by adding suffix "-hf" a 0.700 0.800 0.028 .032 b 0.203ref. 0.008ref. c 0.000 0.050 0000 0.002 d 1.924 2.076 0.076 0.082 e 1.924 2.076 0.076 0.082 f 0.800 1.000 0.031 0.039 g 0.850 1.050 0.033 0.041 h 0.200 0.400 0.008 0.016 j 0.200 --- 0.008 --- k 0.460 0.660 0.018 0.026 l 0.650typ. 0.026typ. m 0.250 0.350 0.010 0.014 n 0.174 0326 0.007 0.013 dimensions micro commercial components m c c r
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www. mccsemi .com 1 of 4 equivalent circuit b d e f g h j c a k l m n p d power dissipation(note2,ta=25 o c) 2.5 w maximum power dissipation(note3,tc=25 o c) 18 r jc thermal resistance junction to case(note4) 6.9 /w notes: 1.. repetit e rating: pulse width lim ited by maximum junction temperature. 2. this test is performed with no heat sink at t a =25 . 3. this test is performed with infinite heat sink at t c =25 . 4.. surface m nted on fr4 board, t 10s. m arking:1216 1. drain 2.drain 3.gate 4.source 5.drain 6.drain
revision: a 2016/02/03 electrical characteristics(t a =25 unless otherwise specified) micro commercial components m c c r www. mccsemi .com 2 of 4 parameter symbol test condition min typ max unit off characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a -12 v gate-body leakage current i gss ds v =0v, v gs =8v 100 na zero gate voltage drain current i dss ds v =-12v, v gs =0v -1 a on characteristics (note 5) gate-threshold voltage v gs(th) v ds =v gs , i d =-250a -0.4 -0.7 -1 v v gs =-4.5v, i d =-6.7a 21 drain-source on-state resistance r ds(on) v gs =-2.5v, i d =-6.2a 27 m? forward transconductance g fs v ds =-10v, i d =-6.7a 40 s dynamic characteristics (note 6) input capacitance c iss 2700 output capacitance c oss 680 reverse transfer capacitance c rss v ds =-10v,v gs =0v,f =1mhz 590 pf v ds =-6v,v gs =-8v,i d =-10a 60 100 total gate charge q g 35 48 gate-source charge q gs 5 gate-drain charge q gd v ds =-6v,v gs =-4.5v,i d =-10a 10 nc drain-source diode characteristics diode forward current (note 5) i s -16 a diode forward voltage(note 4) v sd gs v =0v, i sd =-8a -1.2 v notes: 5. pulse test: pulse with 300 s,duty cycle 2%. 6. guaranteed by design, not s ubject to production testing.
m c c r revision: a 2016/02/03 www. mccsemi .com 3 of 4 micro commercial components 7 \ s l f d o & k d u d f w h u l v w l f v -0.0 -0.5 -2.5 -3.0 -0 -10 -20 -30 -40 -50 -1 -5 0 20 40 60 -0 -10 -40 -50 0 10 20 30 40 50 60 70 80 -0 -12 0 800 1600 2400 3200 4000 -0.4 -1.0 -1.2 -1 -10 25 50 75 100 125 150 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 v gs =-3v thru -4.5v v gs -1.5v v gs -2v v gs =-2.5v drain current i d (a) -1.0 -1.5 -2.0 drain to source voltage v ds (v) pulsed -2 -3 -4 gate to source voltage v gs (v) on-resistance r ds(on) (m ?) i d =-6.7a ta=25 pulsed v gs r ds(on) ta=25 pulsed vgs=-4.5v vgs=-2.5v on-resistance r ds(on) (m ?) -20 -30 drain current i d (a) i d r ds(on) c iss c oss capacitance c (pf) -3 -6 -9 drain to source voltage v ds (v) c rss capaci tance source current i s (a) -0.6 -0.8 source to drain voltage v sd (v) ta=25 pulsed v sd i s -20 output ch aracteristics threshold voltage v th (v) junction temperature t j ( ) i d =-250ua threshol d voltage
revision: a 2016/02/03 device packing part numb er-tp tape&reel:3kpcs/reel ordering information : ***important no tice*** micr o commercia l components corp. r e s e rve s t h e rig ht to make changes without further notice to any product herein to make c orrections, modifications , enhancements , improvements , or other changes . micr o commercial components corp . d oes not assume any liability arising out of the application or use of any product described herein; neither does it conve y any license under its patent rights ,nor the rights of others . the user of products in such applications shall assume all risk s of such use and will agree to hold micro commercial components corp . and all the companies whose products are repr esented on our website, harmless against all damages. ***life support*** mcc's products are not authorized f or us e as critical components in l ife suppor t de vice s or s ystems with out the express written approval of micro commercial components corporation. ***customer awareness*** count erf ei ting o f semi conductor parts is a growi ng problem in the industry. micro commerci al com ponents (mcc) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. mcc strongly encourages custo mers to purchase mcc parts either directly from mcc or from authorized mcc distributors who are listed by country on our web page cited below. products customers buy either from mcc directly or from authorized mcc distributors are genuine par ts, have full traceability, meet mcc's quality standards for handling and storage. m cc will not provide any warranty coverag e or other assistance for parts bought from unauthorized sources. mcc i s committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distr ibutors. note : adding "-hf" suffix for halogen free, eg. part number-tp-hf micro commercial components m c c r 4 of 4
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