? semiconductor components industries, llc, 2006 february, 2006 ? rev. 1 1 publication order number: NTJS4151P/d NTJS4151P trench power mosfet ? 20 v, ? 4.2 a, single p ? channel, sc ? 88 features ? leading trench technology for low r ds(on) extending battery life ? sc ? 88 small outline (2x2 mm) for maximum circuit board utilization, same as sc ? 70 ? 6 ? gate diodes for esd protection ? pb ? free package is available applications ? high side load switch ? cell phones, computing, digital cameras, mp3s and pdas maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain ? to ? source voltage v dss ? 20 v gate ? to ? source voltage v gs 12 v continuous drain current (note 1) steady state t a = 25 c i d ? 3.3 a t a = 85 c ? 2.4 t 5 s t a = 25 c ? 4.2 power dissipation (note 1) steady state t a = 25 c p d 1.0 w pulsed drain current t p = 10 s i dm ? 10 a operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) i s ? 1.3 a lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c esd human body model (hbm) esd 4000 v thermal resistance ratings (note 1) parameter symbol max unit junction ? to ? ambient ? steady state r ja 125 c/w junction ? to ? ambient ? t 5 s r ja 75 junction ? to ? lead ? steady state r jl 45 maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). device package shipping ? ordering information NTJS4151Pt1 sc ? 88 3000 / tape & reel top view http://onsemi.com sc ? 88 (sot ? 363) d d s d d 6 5 4 1 2 3 v (br)dss r ds(on) typ i d max 47 m @ ? 4.5 v 70 m @ ? 2.5 v 180 m @ ? 1.8 v ? 4.2 a NTJS4151Pt1g sc ? 88 (pb ? free) 3000 / tape & reel g ? 20 v ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. sc ? 88/sot ? 363 case 419b marking diagram & pin assignment ty m 1 6 1 ty = device code m = date code = pb ? free package dds ddg (note: microdot may be in either location)
NTJS4151P http://onsemi.com 2 electrical characteristics (t j =25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = ? 250 a ? 20 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j ? 12 mv/ c zero gate voltage drain current i dss v gs = ? 16 v, v ds = 0 v t j = 25 c ? 1.0 a t j = 85 c ? 5.0 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 4.5 v 1.5 a v ds = 0 v, v gs = 12 v 10 ma on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = ? 250 a ? 0.40 ? 1.2 v negative threshold temperature coefficient v gs(th) /t j 4.0 mv/ c drain ? to ? source on resistance r ds(on) v gs = ? 4.5 v, i d = ? 3.3 a 47 60 m v gs = ? 2.5 v, i d = ? 2.3 a 70 85 v gs = ? 1.8 v, i d = ? 1.0 a 180 205 forward transconductance g fs v gs = ? 10 v, i d = ? 3.3 a 12 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = ? 10 v 850 pf output capacitance c oss 160 reverse transfer capacitance c rss 110 total gate charge q g(tot) v gs = ? 4.5 v, v ds = ? 10 v, i d = ? 3.3 a 10 nc gate ? to ? source charge q gs 1.5 gate ? to ? drain charge q gd 2.8 switching characteristics (note 3) turn ? on delay time t d(on) v gs = ? 4.5 v, v dd = ? 10 v, i d = ? 1.0 a, r g = 6.0 0.85 s rise time t r 1.7 turn ? off delay time t d(off) 2.7 fall time t f 4.2 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = ? 1.3 a, t j = 25 c ? 0.75 ? 1.2 v reverse recovery time t rr v gs = 0 v, di s /dt = 100 a/ s, i s = ? 1.3 a 63 ns charge time t a 9.0 discharge time t b 54 reverse recovery charge q rr 0.23 nc 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
NTJS4151P http://onsemi.com 3 0 1 2 3 4 02468 v gs = ? 1.8 v v gs = ? 2.0 v v gs = ? 2.4 v v gs = ? 2.8 v to 6.0 v v gs = ? 1.6 v v gs = ? 1.0 v v gs = ? 1.4 v ? v ds , drain ? to ? source voltage (v) figure 1. on ? region characteristics ? i d , drain current (a) t j = 25 c 0 1 2 3 4 5 01234 ? v ds , drain ? to ? source voltage (v) figure 2. on ? region characteristics ? i d , drain current (a) v ds ? 10 v 0 0.1 0.2 0.3 0.4 0.5 0246 i d = ? 3.3 a t j = 25 c ? v gs , gate ? to ? source voltage (v) figure 3. on ? resistance versus gate ? to ? source voltage rds (on) , drain ? to ? source resistance ( ) v gs = ? 1.8 v t j = 25 c ? i d , drain current (a) figure 4. on ? resistance versus drain current and gate voltage rds (on) , drain ? to ? source resistance ( ) 0.6 0.8 1 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 t j , junction temperature ( c) figure 5. on ? resistance variation with temperature i d = ? 3.3 a v gs = 4.5 v rds (on) , drain ? to ? source resistance (normalized) 100 1000 10000 100000 048121620 figure 6. drain ? to ? source leakage current versus voltage ? v ds , drain ? to ? source voltage (v) ? i dss , leakage (na) v gs = 0 v t j = 150 c v gs = ? 1.2 v . 0 0.1 0.2 0.3 0.4 0.5 0.6 12345 v gs = ? 2.5 v v gs = ? 4.5 v
NTJS4151P http://onsemi.com 4 0 250 500 750 1000 1250 048121620 c, capacitance (pf) figure 7. capacitance variation v gs = 0 v t j = 25 c c iss ? v ds , drain ? to ? source voltage (v) ? v gs , gate ? to ? source voltage (v) q t v gs v ds figure 8. gate ? to ? source and drain ? to ? source voltage versus total charge q g , total gate charge (nc) i d = ? 3.3 a t j = 25 c 100 1000 10000 1 10 100 t f t d(off) t r t d(on) t, time (ns) r g , gate resistance ( ) figure 9. resistive switching time variation gate resistance 0 0.5 1 1.5 2 2.5 3 0.4 0.5 0.6 0.7 0.8 0.9 ? i s , source current (a) figure 10. diode forward voltage versus current ? v sd , source ? to ? drain voltage (v) v gs = 0 v t j = 25 c 0 1 2 3 4 5 024681012 0 3 6 9 12 15 q gd q gs
NTJS4151P http://onsemi.com 5 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b ? 01 obsolete, new standard 419b ? 02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ? e ? b 6 pl sc ? 88/sc70 ? 6/sot ? 363 case 419b ? 02 issue w dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?t ypicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license un der its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended f or surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in a ny manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2 ? 9 ? 1 kamimeguro, meguro ? ku, tokyo, japan 153 ? 0051 phone : 81 ? 3 ? 5773 ? 3850 NTJS4151P/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082 ? 1312 usa phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 toll free usa/canada fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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