UML4N transistors general purpose transistor (isolated transistor and diode) UML4N a 2sa2018 and a rb521s-30 are housed independently in a umt package. ! ! ! ! applications dc / dc converter motor driver ! ! ! ! features 1) tr : low v ce (sat) di : low v f 2) small package ! ! ! ! structure silicon epitaxial planar transistor schottky barrier diode ! ! ! ! equivalent circuit tr2 di1 (1) (2) (3) (4) (6) ! ! ! ! packaging specifications type UML4N umt5 l4 tr 3000 package marking code basic ordering unit(pieces) ! ! ! ! external dimensions (units : mm) UML4N rohm : umt5 eiaj : sc-88a 0.9 0.15 0 ~ 0.1 0.1min. 0.7 2.1 1.3 0.65 2.0 ( 4 ) ( 1 ) ( 6 ) 0.2 1.25 ( 2 ) 0.65 ( 3 ) each lead has same dimensions
UML4N transistors ! ! ! ! absolute maximum ratings (ta=25 c) di1 parameter symbol i o i fsm v r tj tstg limits 200 1 30 125 ? 55~ + 125 unit ma a v c c average rectified forward current f orward current surge peak (60h z , 1 ) reverse voltage (dc) junction temperature range of storage temperature tr2 parameter symbol v cbo v ceo v ebo i c i cp pd tj tstg limits ? 15 ? 12 ? 6 ? 500 120 150 ? 55~ + 125 ? 1 ? unit v v v ma a mw c c ? each terminal mounted on a recommended land. collector-base voltage collector-emitter voltage emitter-base voltage collector current power dissipation junction temperature range of storage temperature ! ! ! ! electrical characteristics (ta=25 c) di1 parameter symbol min. typ. max. unit conditions ? 0.50 v r 0.40 v i f =200ma v r =10v forward voltage i r ? 4.0 30 a reverse current tr2 parameter symbol min. typ. max. unit conditions v cb =? 10v, i e = 0ma, f = 1mhz f t ? 260 ? mhz v ce =? 2v, i e = 10ma, f = 100mhz bv ceo ? 12 ?? v i c =? 1ma bv cbo ? 15 ?? v i c =? 10 a bv ebo ? 6 ?? v i e =? 10 a i cbo ?? ? 100 na v cb =? 15v i ebo ?? ? 100 na v eb =? 6v v ce(sat) ?? 100 ? 250 mv i c =? 200ma, i b =? 10ma h fe 270 ? 680 ? v ce =? 2v, i c =? 10ma cob ? 6.5 ? pf transition frequency collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector cut-off current emitter cut-off current collector-emitter saturation voltage dc current gain collector output capacitance ! ! ! ! electrical characteristic curves di1 1 10 100 1m 10m 100m 1 forward current : i f (a) forward voltage : v f (v) 0 0.1 0.2 0.3 0.4 0.5 0.6 c 5 2 1 = a t c 5 7 c 5 2 c 5 2 ? fig.1 forward characteristics 10n 100n 1 10 100 1m 10m reverse current : i r (a) reverse voltage : v r (v) 0102030 ta = 125 c 75 c 25 c ? 25 c fig.2 reverse characteristics
UML4N transistors tr2 0 1 100 1000 10 base to emitter voltage : v be (v) collector current : i c (ma) 1.4 1.0 1.2 0.4 0.6 0.8 0.2 v ce =2v pulsed ta=125 c ta=25 c ta= ? 40 c fig.3 grounded emitter propagation characteristics 1 10 100 1000 collector current : i c (ma) 1 dc current gain : h fe 10 1000 100 ta = 125 c ta =? 40 c ta = 25 c v ce = 2v pulsed fig.4 dc current gain vs. collector current 1 10 100 1000 collector current : i c (ma) 1 collector saturation voltage : v ce(sat) (mv) 10 1000 100 ta=25 c pulsed i c /i b = 50 i c /i b = 20 i c /i b = 10 fig.5 collector-emitter saturation voltage vs. collector current ( ) 1 10 100 1000 collector current : i c (ma) 1 collector saturation voltage : v ce (sat) (v) 10 1000 100 ta = 25 c ta =? 40 c ta = 125 c i c /i b = 20 pulsed fig.6 collector-emitter saturation voltage vs. collector current ( ? ) 1 10 100 1000 collector current : i c (ma) 10 baser saturation voltage : v be (sat) (mv) 100 10000 1000 ta = 25 c ta =? 40 c ta = 125 c i c /i b = 20 pulsed fig.7 base-emitter saturation voltage vs. collector current 1 10 100 1000 emitter current : i e (ma) 1 transition frequency : f t (mhz) 10 1000 100 v ce = 2v ta = 25 c pulsed fig.8 gain bandwidth product vs. emitter current 1 10 100 0.1 1 10 100 1000 ta = 25 c f = 1mhz i e = 0a collector output capacitance : cob (pf) emitter input capacitance : cib (pf) emitter to base voltage : v eb ( v) cib cob fig.9 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage 0.01 0.1 1 10 100 emitter current : v ce (v) 0.001 transition frequency : i c (a) 0.01 10 0.1 1 ta = 25 c single pulsed dc 100ms 10ms 1ms fig.10 safe operation area
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