bcw31 fea t ures * low current(100ma) * low voltage(32v) * general purpose sw ithc hing and amplification absolute maximum ra tings at t a =25 ch aracteristic sy mb o l ratin g un it collector-base v o ltage vcbo 32 v collector-emitter v o ltage vceo 32 v emitter-base v o ltage v eb 5 v collector current ic 100 ma collector dissipation t a =25 * p d 250 mw junction t e mperature t j 150 storage t e mperature t s tg -65-150 1. g a t e 2 . s o ur cer 3. d r a i e 1. 1. 3 2. 4 2 . 9 1 . 9 0 . 9 5 0 . 9 5 0 . 4 un i t : m m electrical characteristics at t a =25 cha r a c t e r is tic sy mbol min t y p ma x unit t e s t conditions collector-base breakdow n v o ltage bvcbo 32 v ic= 100ua ie= 0 collector-emitter breakdo w n v o ltage# bvceo 32 v ic= 2ma ib= 0 emitter-base breakdow n v o ltage bv ebo 5 v ie= 100ua ic= 0 collector cutof f current icbo 100 10 na ua vcb= 32v ie= 0 vcb= 32v ie= 0 t j = 100 emitter cutof f current iebo 100 na v eb= 5v ic= 0 base-emitter v o ltage vbe 550 700 mv ic= 2 ma vce= 5v collector capacitance cob 2.5 pf ie= 0 vcb= 10v f= 1mhz 190 vce= 5v ic= 10ua dc current gain hfe 1 10 220 vce= 5v ic= 2ma collector-emitter saturation v o ltage vce(sat) 120 210 250 mv ic= 10ma ib= 0.5ma ic=50ma ib=2.5ma base-emitter saturation v o ltage vbe(sat) 750 850 mv ic= 10ma ib= 0.5ma ic=50ma ib=2.5ma t r ansition f r equency f t 100 mhz vce= 5v ic= 10ma f= 100mhz noise figure f 10 db ic= 200ua vce= 5v rs= 2 k f = 1khz b= 200hz * t o tal device dissipation : fr=1 x 0.75 x 0.062in board,derate 25 . # pulse t e st : pulse w i dth 300us,duty cy cle 2% device marking: bcw31=d1t http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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