www.cj-elec.com a-1,dec,2013 1 wbfbp-02c jiangsu changjiang electronics technology co., ltd wbfbp-02c plastic-encapsulate diodes ESDBVD5V0F1 bi-direction esd protection diode description designed to protect voltage sensitive electronic components from esd and other transients. excellent clam ping capability, low leakage, low capacitance, and fast response time provide best in class protection on designs that are exposed to esd. the combination of small size, low capaci tance, and high level of esd protection makes them a flexible solution for applications such as hdmi, display port tm, and mddi interfaces. it is designed to replac e multiplayer varistors (mlv) in consumer equipments applications such as mobile phone, notebook, pad, stb, lcd tv etc. features ? bi-directional esd protection of one line ? low capacitance: 3pf(typ.) ? low reverse stand ? off voltage: 5v ? low reverse clamping voltage ? low leakage current ? excellent package:1.0mm 0.6mm 0.5mm ? fast response time ? jesd22-a114-b esd rating of class 3b per human body model ? iec 61000-4-2 level 4 esd protection applications ? computers and peripherals ? high speed data lines ? audio and video equipment ? cellular handsets and accessories ? subscriber identity module(sim) card protection ? portable electronics ? firewire ? other electronics equipments communi- cation systems marking hf = device code front side
changjiang elec.tech. esdbvd5v0 f 1 www.cj-elec.com 2 a-1,dec,2013 maximum ratings ( t a =25 unless otherwise noted ) parameter symbol limit unit iec 61000-4-2 esd voltage air model contact model v esd (1) 15 kv 15 jesd22-a114-b esd voltage per human body model 16 esd voltage machine model 0.4 peak pulse power p pp (2) 52 w peak pulse current i pp (2) 4 a lead solder temperature ? maximum (10 second duration) t l 260 junction temperature t j 150 storage temperature range t stg -55 ~ +150 (1).device stressed with ten non-repetitive esd pulses. (2).non-repetitive current puls e 8/20s exponential decay waveform according to iec61000-4-5. esd standards compliance iec61000-4-2 standard jesd22-a114-b standard contact discharge air discharge level test voltage kv level test voltage kv 1 2 1 2 2 4 2 4 3 6 3 8 4 8 4 15 esd class human body discharge v 0 0 249 1a 1b 1c 250 499 500 999 1000 1999 2 2000 3999 3a 3b 4000 7999 8000 15999 esd pulse waveform according to iec61000-4-2 8/20 s pulse waveform according to iec 61000-4-5
changjiang elec.tech. esdbvd5v0 f 1 www.cj-elec.com a-1,dec,2013 3 electrical parameter v-i characteristics for a bi-directional tvs electrical characteristics(t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit reverse stand off voltage v rwm 1 5 v reverse leakage current i r v r wm =5v 1 a breakdown voltage v ( br ) i t =1ma 5.6 8 v clamping voltage v c 2 i pp =4a 13 v junction capacitance c j v r =0v,f=1mhz 3 pf (1).other voltages available upon request. (2).non-repetitive current pulse 8/20 s exponential decay waveform according to iec61000-4-5 symbol parameter v c clamping voltage @ i pp i pp peak pulse current v br breakdown voltage @ i t i t test current i r reverse leakage current @ v rwm v rwm reverse standoff voltage
changjiang elec.tech. esd bvd 5v 0f1 www.cj-elec.com 4 a-1,dec,2013 typical characteristics 012345 0 1 2 3 4 -9 -6 -3 0 3 6 9 -100 -75 -50 -25 0 25 50 75 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 3 6 9 12 15 reverse voltage v r (v) junction capacitance c j (pf) t a =25 f=1mhz capacitance characteristics reverse current i r (ma) reverse voltage v r (v) t a =25 t a =100 reverse characteristics pulsed v c ---- i pp t a =25 tp=8/20us clamping voltage v c (v) reverse peak pulse current i pp (a)
changjiang elec.tech. www.c j-el ec.com 3 $ & . $ * ( 2 8 7 / , 1 ( $ 1 ' 3 $ ' / $ < 2 8 7 , 1 ) 2 5 0 $ 7 , 2 1 a-1,dec,2013 5 : % ) % 3 &
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changjiang elec.tech. www.c j-el ec.com 7 $ 3 ( $ 1 ' 5 ( ( / , 1 ) 2 5 0 $ 7 , 2 1 ( 6 ' % 9 ' 9 ) a-1,dec,2013
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