www. c j-elec.com 1 ESDBW4V5A1 d e s c r i p t i o n desig n e d to pr otect voltag e sensitiv e electro n ic comp one nt s from esd and other transie nts. exc e lle nt clam p in g capability, low leakage, low capacitance, and fast response time provide best in class protection on designs that are exposed to esd. the combination of small size, low capaci tance, and high level of esd protection makes them a flexible solution for applications such as hdmi, display port tm, and mddi interfaces. it is designed to replac e multiplayer varistors (mlv) in consumer equipments applications such as mobile phone, notebook, pad, stb, lcd tv etc. fe a tures z z z reverse stand ? off voltage: 4.5 v z low reverse clamping voltage z low leakage current z excellent package:1.0mm 0.6mm 0.5mm z fast response time jesd22-a114-b esd rating of class 3b per human body model z iec 61000-4-2 level 4 esd protection ap p lications z comp uters an d peripherals z power lines z audio and video equipment z cellular handsets and accessories z portable electronics z tablets z other electronics equipments communi- cation systems marking wb = device c ode front side 1 bi-direction esd protection diode a-1,aug,2015 jiangsu changjiang electronics technology co., l t d dfnwb1.0x0.6-02l plastic-encapsulate diodes dfnwb1.0x0.6-02l wb bi-directional esd protection of one line
changjiang el ec.tech. www . cj-elec.com maximum ra tings ( t a =25 unless otherw ise noted ) para mete r symbol limit unit 25 iec 6100 0-4-2 esd voltage air model contact model 25 j e sd22-a114-b esd voltage per human body model 16 esd v oltage machine model v esd (1 ) 0.4 kv peak puls e po wer p pp (2 ) 540 w peak puls e cu rrent i pp (2 ) 30 a lea d sol der temperature ? maximum (10 second duration) t l 260 junctio n te mperature t j 150 s t orage temperature range t st g -55 ~ +150 (1).device stressed w ith ten non-repetitive esd pulses. (2).non-repetitive current puls e 8/20s exponential decay waveform according to iec61000-4-5. e s d s t an d a rds compliance iec61000 -4- 2 standard jesd22-a114-b standard cont act disc h arge air discharge leve l test voltage kv level test voltage kv 1 2 1 2 2 4 2 4 3 6 3 8 4 8 4 15 esd class huma n bod y discharge v 0 0 24 9 1a 1b 1c 250 49 9 500 99 9 1000 1999 2 200 0 3 999 3a 3b 400 0 7 999 8000 15999 esd pu lse waveform according to iec61000-4-2 8/20 s pu lse waveform according to iec 61000-4-5 2 ESDBW4V5A1 a-1,aug,2015
changjiang el ec.tech. www .c j-elec.com 3 electrical characteristics(t a =25 un l ess otherwise specified) electrical p arameter v-i ch aracter istics for a bi-directional tvs symbol para meter v c clampin g voltage @ i pp i pp peak pulse cu rrent v br breakdo wn voltage @ i t i t t est current i r reverse leak age current @ v rw m v rw m reverse s tandoff voltage pa rameter symbol test conditions min typ max unit revers e stand off voltage v rw m 1 4.5 v revers e leaka ge current i r v rw m = v 1 a breakd o w n voltage v (b r) i t = 1ma 4.6 v clamp ing volta ge v c 2 i pp =30a 18 junctio n cap a citance c j v r = 0 v ,f=1mhz (1).other volta ges ava ila ble upon request. (2).non-repetitive current pulse 8/20 s exponential decay waveform according to iec61000-4-5 6 pf i t = 1 00 ma 4.5 v 4.5 60 v a-1,aug,2015 ESDBW4V5A1
changjiang elec.tech. www. c j-elec.com 7 < 3 , & $ / & + $ 5 $ & 7 ( 5 , 6 7 , & 6 4 a-1,aug,2015 ESDBW4V5A1 01234 0 10 20 30 40 50 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 -100 -75 -50 -25 0 25 50 75 100 0 5 10 15 20 25 30 35 4 8 12 16 20 reverse voltage v r (v) junction capacitance c j (pf) t a =25 f=1mhz capacitance characteristics 4.5 reverse current i r (ma) reverse voltage v r (v) t a =25 t a =100 reverse characteristics pulsed v c ?? i pp t a =25 tp=8/20us clamping voltage v c (v) reverse peak pulse current i pp (a)
changjiang el ec.tech. www . cj-elec.com 3 $ & . $ * ( 2 8 7 / , 1 ( $ 1 ' 3 $ ' / $ < 2 8 7 , 1 ) 2 5 0 $ 7 , 2 1 5 dfnwb1.00.6-02l-e dfnwb1.00.6-02l-e a-1,aug,2015 ESDBW4V5A1
changjiang elec.tech. www.c j-elec.com 7 $ 3 ( $ 1 ' 5 ( ( / , 1 ) 2 5 0 $ 7 , 2 1 a-1,aug,2015 ESDBW4V5A1
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