ss32-m3, ss33-m3, SS34-M3, ss35-m3, ss36-m3 www.vishay.com vishay general semiconductor revision: 04-aug-15 1 document number: 89496 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount schottky barrier rectifier features ? low profile package ? ideal for automated placement ? guardring for overvoltage protection ? low power losses, high efficiency ? low forward voltage drop ? high surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in low voltage high frequency inverters, freewheeling, dc/dc converte rs, and polarity protection applications. mechanical data case: do-214ab (smc) ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs-compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes the cathode end primary characteristics i f(av) 3.0 a v rrm 20 v, 30 v, 40 v, 50 v, 60 v i fsm 100 a e as 20 mj v f 0.5 v, 0.75 v t j max. 150 c package do-214ab (smc) diode variation single die do-214ab (smc) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol ss32 ss33 ss34 ss35 ss36 unit device marking code s2 s3 s4 s5 s6 maximum repetitive peak reverse voltage v rrm 20 30 40 50 60 v maximum rms voltage v rms 14 21 28 35 42 v maximum dc blocking voltage v dc 20 30 40 50 60 v maximum average forward rectified current at t l (fig. 1) i f(av) 3.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 100 a non-repetitive avalanche energy at t a = 25 c, ? i as = 2.0 a, l = 10 mh e as 20 mj voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction temperature range t j -55 to +150 c storage temperature range t stg -55 to +150 c
ss32-m3, ss33-m3, SS34-M3, ss35-m3, ss36-m3 www.vishay.com vishay general semiconductor revision: 04-aug-15 2 document number: 89496 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse test: 300 s pulse width, 1 % duty cycle note (1) p.c.b. mounted 0.55" x 0.55" (14 mm x 14 mm) copper pad areas ratings and characteristics curves (t a = 25 ? c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetitive peak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol ss32 ss33 ss34 ss35 ss36 unit maximum instantaneous forward voltage (1) 3.0 a v f 0.5 0.75 v maximum dc reverse current at rated dc blocking voltage (1) t a = 25 c i r 0.5 ma t a = 100 c 20 10 thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol ss32 ss33 ss34 ss35 ss36 unit typical thermal resistance (1) r ? ja 55 c/w r ? jl 17 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode SS34-M3/57t 0.235 57t 850 7" diameter plastic tape and reel SS34-M3/9at 0.235 9at 3500 13" diameter plastic tape and reel 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 25 50 75 100 125 150 average forward rectified current (a) lead temperature ( c) pcb mounted on 0.55" x 0.55" (14 mm x 14 mm) copper pad area ss 32 thru ss 36 1 10 100 0 20 40 60 8 0 100 n u m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) at rated t l 8 .3 ms single half sine- w a v e
ss32-m3, ss33-m3, SS34-M3, ss35-m3, ss36-m3 www.vishay.com vishay general semiconductor revision: 04-aug-15 3 document number: 89496 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse current characteristics fig. 5 - typical j unction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 in s tantaneou s forward current (a) in s tantaneou s forward voltage (v) t j = 25 c ss32 thru ss34 ss35 and ss36 pul s ewidth = 300 s 1% duty cycle t j = 150 c 0.001 0.01 0.1 1 10 100 1000 0 20406080100 in s tantaneou s rever s e current (ma) percent of rated peak rever s e voltage (%) t j = 125 c ss32 thru ss34 ss35 and ss36 t j = 25 c t j = 75 c t j = 150 c 0.1 1 10 100 10 1000 re v erse v oltage ( v ) j u nction capaci tance (pf) 100 ss32 thr u ss34 ss35 and ss36 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 0.01 0.1 1 10 100 0.1 1 10 100 transient thermal impedance (c/ w ) t - p u lse d u ration (s) cathode band do-214ab ( s mc) 0.126 (3.20) 0.114 (2.90) 0.246 (6.22) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) 0.060 (1.52) 0.030 (0.76) 0.103 (2.62) 0.079 (2.06) mountin g pad layout 0.126 (3.20) min. 0.060 (1.52) min. 0.185 (4.69) max. 0.320 (8.13) ref.
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