fast switching thyristor atf530 repetitive voltage up to 2000 v mean on-state current 1100 a surge current 15 ka target specification turn-off time 50 s apr 06 - issue : 0 symbol characteristic conditions tj [c] value unit blocking v rrm repetitive peak reverse voltage 125 2000 v v rsm non-repetitive peak reverse voltage 125 2100 v v drm repetitive peak off-state voltage 125 2000 v i rrm repetitive peak reverse current v=vrrm 125 75 ma i drm repetitive peak off-state current v=vdrm 125 75 ma conducting i t (av) mean on-state current 180 sin, 50 hz,th=55c, doubl e side cooled 1100 a i t (av) mean on-state current 180 sin, 1 khz,tc=85c, doub le side cooled 900 a i tsm surge on-state current, non repetitive sine wave, 1 0 ms 125 15 ka i2 t i2 t without reverse voltage 1125 x1e3 a2s poseico spa via n. lorenzi 8, 16152 genova - italy tel. +39 010 6556234 - fax +39 010 6557519 sales office: tel. +39 010 6556775 - fax +39 010 6442510 poseico spa power semiconductors italian corporation poseico i2 t i2 t without reverse voltage 1125 x1e3 a2s v t on-state voltage on-state current = 2000 a 25 2,25 v v t(to) threshold voltage 125 1,30 v r t on-state slope resistance 125 0,410 mohm switching di/dt critical rate of rise of on-state current, min from 50% vdrm 125 800 a/s dv/dt critical rate of rise of off-state voltage, mi n linear ramp up to 70% of vdrm 125 500 v/s td gate controlled delay time, typical vd=vdrm, gate source 20v, 20 ohm , tr=0.1 s 25 1,5 s tq circuit commutated turn-off time di/dt = 20 a/s, i= 1000 a i = 800 a 125 50 s dv/dt = 200 v/s , up to 75% vdrm q rr reverse recovery charge di/dt = 60 a/s, i= 1000 a i = 1000 a 125 620 c i rr peak reverse recovery current vr = 50 v 300 a i h holding current, typical vd=5v, gate open circuit 25 5 00 ma i l latching current, typical vd=5v, tp=30s 25 1000 ma gate v gt gate trigger voltage vd=6v 25 3,0 v i gt gate trigger current vd=6v 25 150 ma v gd non-trigger gate voltage, min. vd=vdrm 125 0,3 v v fgm peak gate voltage (forward) 25 30 v i fgm peak gate current 25 10 a v rgm peak gate voltage (reverse) 25 5 v p gm peak gate power dissipation pulse width 100 s 25 200 w p g(av) average gate power dissipation 25 3 w mounting r th(j-h) thermal impedance, dc junction to heatsink, double s ide cooled 26 c/kw r th(c-h) thermal impedance, dc case to heatsink, double side cooled 6 c/kw t j operating junction temperature -30 / 125 c f mounting force 14.0 / 17.0 kn mass 500 g mass 500 g tq code d 10 s c 12 s b 15 s a 20 s l 25 s ordering information : atf530 s 20 s tq code m 30 s n 35 s p 40 s r 45 s s 50 s standard specification vdrm&vrrm/100 t 60 s u 70 s w 80 s x 100s y 150s
atf530 fast switching thyristor target specification apr 06 - issue : 0 switching characteristics 0 200 400 600 800 1000 1200 1400 1600 1800 0 50 100 150 200 250 300 350 400 qrr [c] di/dt [a/s] reverse recovery charge tj = 125 c 250 a 500 a 1000 a poseico spa power semiconductors italian corporation poseico 0 200 400 600 800 1000 0 50 100 150 200 250 300 350 400 irr [a] di/dt [a/s] reverse recovery current tj = 125 c 1000 a 500 a 250 a ta = irr / (di/dt) tb = trr - ta softness (s factor) s = tb / ta energy dissipation during recovery er = vr (qrr - irr ta / 2 ) di/dt irr i f ta tb vr di/dt [a/s]
atf530 fast switching thyristor target specification apr 06 - issue : 0 0 500 1000 1500 2000 2500 3000 3500 0,6 1,1 1,6 2,1 2,6 on-state current [a] on - state voltage [v] on-state characteristic tj = 125 c 0 2 4 6 8 10 12 14 16 1 10 100 itsm [ka] n cycles surge characteristic tj = 125 c poseico spa power semiconductors italian corporation poseico cathode terminal type din 46244 - a 4.8 - 0.8 gate terminal type amp 60598 - 1 distributed by on - state voltage [v] 0 5 10 15 20 25 30 35 0,001 0,01 0,1 1 10 zth j-h [c/kw] t[s] transient thermal impedance double side cooled n cycles all the characteristics given in this data sheet are guarant eed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 m. in the interest of product improvement poseico spa reserves the right to change any data given in this data sheet at any time without previous notice. if not stated otherwise the maximum value of ratings (simbols over shaded if not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.
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