1 elm51400fa - s 6 - g e neral description f eatures 1 2 3 single n-channel mosfet pin no. pin name 1 gate 2 source 3 drain pin configuration c ircuit s c - 70 (top vi ew) s g d maximum a bsolute ratings thermal characteristics parameter symbol typ. max. unit maximum junction - to - a mbient r ja 120 c /w parameter symbol limit unit drain - s ource voltage vds 3 0 v gate - s ource v oltag e vgs 12 v conti nuous drain current(tj=150 c) t a = 25 c id 1.0 a t a = 70 c 0.6 pulsed d rain current idm 6 a power dissipation t c = 25 c pd 0.35 w t c = 70 c 0.22 j unction and storage temperature range tj , tstg - 55 to 150 c ? vds = 3 0v ? id = 1.0 a ? rds (on) < 430 m (vgs = 4.5 v) ? rds (on) < 5 80 m (vgs = 2 .5v) ? rds (on) < 860 m (vgs = 1 .8v) elm51400fa - s uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. t a = 25 c . u nless otherwise noted.
2 elm51400fa - s 6 - electrical characteristics single n-channel mosfet parameter symbol condition min. typ. max. unit static parameters drain - s ource breakdown voltage bvdss id = 25 0 a , vgs = 0v 3 0 v zero g ate voltage drain current idss vds = 2 4 v, vgs = 0v 1 a t a = 8 5 c 5 gate - b ody leakage current ig s s vds = 0v , vgs = 1 2 v 100 n a gate t hreshold voltage vg s( th) vds = vgs , id = 25 0 a 0.5 1.0 v on s tate drain current i d ( on ) vgs = 4.5 v, vds = 5v 1.8 a static drain - s ource on - r esistance r d s (o n ) vgs = 4.5 v, id = 1 . 5 a 380 430 m vgs = 2 .5v, id = 1. 2 a 500 580 vgs = 1.8 v, id = 0.6 a 760 860 forward transconductance gfs vds = 10 v, id = 1.0 a 1 s diode forward voltage vsd i s = 1.0 a, vgs = 0v 0.65 1.20 v max. body - d iode continuous c urrent is 1.0 a dynamic parameters input capacitance c iss vgs = 0v, vds = 1 5 v, f = 1mh z 85 pf output capacitance c oss 25 pf reverse transfer capacitance c r ss 15 pf switching parameters total gate charge q g vgs = 4.5 v, vds = 1 5 v id = 1.2 a 1.4 1.8 nc gate - s ource charge q gs 0.3 nc gate - d rain charge q gd 0.6 nc turn - o n delay time t d (on) vgs = 4.5 v, vds = 1 5 v r l = 2 0 , id=1.2a rgen = 1 15 25 ns turn - o n rise t ime t r 25 45 ns turn - o ff delay time t d ( of f ) 15 25 ns turn - o ff fall t ime t f 10 20 ns t a = 25 c . u nless otherwise noted.
3 elm51400fa - s 6 - typical electrical and thermal characteristics single n-channel mosfet a f n 1 3 0 6 3 0 v n - c h a n n e l a l f a - m o s t e c h n o l o g y e n h a n c e m e n t m o d e m o s f e t ? a l f a - m o s t e c h n o l o g y c o r p . w w w . a l f a - m o s . c o m r e v . a j u l y 2 0 1 1 p a g e 3 t y p i c a l c h a r a c t e r i s t i c s
4 elm51400fa - s 6 - single n-channel mosfet a f n 1 3 0 6 3 0 v n - c h a n n e l a l f a - m o s t e c h n o l o g y e n h a n c e m e n t m o d e m o s f e t ? a l f a - m o s t e c h n o l o g y c o r p . w w w . a l f a - m o s . c o m r e v . a j u l y 2 0 1 1 p a g e 4 t y p i c a l c h a r a c t e r i s t i c s
5 elm51400fa - s 6 - single n-channel mosfet a f n 1 3 0 6 3 0 v n - c h a n n e l a l f a - m o s t e c h n o l o g y e n h a n c e m e n t m o d e m o s f e t ? a l f a - m o s t e c h n o l o g y c o r p . w w w . a l f a - m o s . c o m r e v . a j u l y 2 0 1 1 p a g e 5 t y p i c a l c h a r a c t e r i s t i c s
6 elm51400fa - s 6 - single n-channel mosfet a f n 1 3 0 6 3 0 v n - c h a n n e l a l f a - m o s t e c h n o l o g y e n h a n c e m e n t m o d e m o s f e t ? a l f a - m o s t e c h n o l o g y c o r p . w w w . a l f a - m o s . c o m r e v . a j u l y 2 0 1 1 p a g e 6 t y p i c a l c h a r a c t e r i s t i c s t est circuit and w aveform
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