q?v~zy??q?v?_rb]qw??qcabeq hfd2n90_HFU2N90 bv dss = 900 v r ds(on) typ
i d = 2.0 a ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 17 nc (typ.) ? extended safe operating area ? lower r ds(on)
7 \ s # 9 gs =10v ? 100% avalanche tested thermal resistance characteristics features absolute maximum ratings t c =25 e unless otherwise specified hfd2n90/HFU2N90 900v n-channel mosfet feb 2014 d-pak 1.gate 2. drain 3. source i-pak hfd2n90 HFU2N90 symbol parameter typ. max. units r jc junction-to-case -- 1.78 `?q r ja junction-to-ambient* -- 50 r ja junction-to-ambient -- 110 * when mounted on the minimum pad size recommended (pcb mount) symbol parameter value units v dss drain-source voltage 900 v i d drain current ? continuous (t c = 25 zq 2.0 a drain current ? continuous (t c = 100 zq 1.3 a i dm drain current ? pulsed (note 1) 8.0 a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 170 mj i ar avalanche current (note 1) 2.0 a e ar repetitive avalanche energy (note 1) 7.0 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t a = 25 ) * 2.5 w power dissipation (t c = 25 zq qqqqqqqqqqqqqqqqqqqqqqqqqqq^qu???q????qcfq 70 w 0.56 w/ q t j , t stg operating and storage temperature range -55 to +150 q t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 q 2 1 2 3 1 3
q?v~zy??q?v?_rb]qw??qcabeq hfd2n90_HFU2N90 notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=65mh, i as =2.2a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ g l g w ? $ v 9 dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & |