ipp90r340c3 coolmos ? power transistor features ? lowest figure-of-merit r on x q g ? extreme dv/dt rated ? high peak current capability ? qualified according to jedec 1) for target applications ? pb-free lead plating; rohs compliant ? worldwide best r ds,on in to220 ? ultra low gate charge coolmos? 900v is designed for: ? quasi resonant flyback / forward topologies ? pc silverbox and consumer applications ? industrial smps maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c a t c =100 c pulsed drain current 2) i d,pulse t c =25 c avalanche energy, single pulse e as i d =3.1 a, v dd =50 v 678 mj avalanche energy, repetitive t ar 2),3) e ar i d =3.1 a, v dd =50 v avalanche current, repetitive t ar 2),3) i ar a mosfet d v /d t ruggedness d v /d t v ds =0...400 v v/ns gate source voltage v gs static v ac (f>1 hz) power dissipation p tot t c =25 c w operating and storage temperature t j , t stg c mounting torque m3 and m3.5 screws 60 ncm 30 208 -55 ... 150 1 3.1 50 20 value 15 9.5 34 v ds @ t j =25c 900 v r ds(on),max @ t j =25c 0.34 ? q g,typ 94 nc product summary pg-to220 type package marking ipp90r340c3 pg-to220 9r340c rev. 1. 1 page 1 20 12 -0 1 - 10
ipp90r340c3 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous diode forward current i s a diode pulse current 2) i s,pulse 34 reverse diode d v /d t 4) d v /d t 4 v/ns parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 0.6 k/w r thja leaded - - 62 soldering temperature, wavesoldering only allowed at leads t sold 1.6 mm (0.063 in.) from case for 10 s - - 260 c electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 900 - - v gate threshold voltage v gs(th) v ds = v gs , i d =1 ma 2.5 3 3.5 zero gate voltage drain current i dss v ds =900 v, v gs =0 v, t j =25 c -- 2 a v ds =900 v, v gs =0 v, t j =150 c -2 0- gate-source leakage current i gss v gs =20 v, v ds =0 v - - 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =9.2 a, t j =25 c - 0.28 0.34 ? v gs =10 v, i d =9.2 a, t j =150 c - 0.76 - gate resistance r g f =1 mhz, open drain - 1.3 - ? value t c =25 c 9.2 values thermal resistance, junction - ambient rev. 1. page 2 20 -0 -
ipp90r340c3 parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 2400 - pf output capacitance c oss - 120 - effective output capacitance, energy related 5) c o(er) -71- effective output capacitance, time related 6) c o(tr) - 280 - turn-on delay time t d(on) -70-ns rise time t r -20- turn-off delay time t d(off) - 400 - fall time t f -25- gate charge characteristics gate to source charge q gs -11-nc gate to drain charge q gd -41- gate charge total q g - 94 tbd gate plateau voltage v plateau - 4.6 - v reverse diode diode forward voltage v sd v gs =0 v, i f =9.2 a, t j =25 c - 0.8 1.2 v reverse recovery time t rr - 510 - ns reverse recovery charge q rr -11-c peak reverse recovery current i rrm -41-a 6) c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 50% v dss. 5) c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 50% v dss . v r =400 v, i f = i s , d i f /d t =100 a/s 3) repetitive avalanche causes additional power losses that can be calculated as p av = e ar * f. 4) i sd i d , di/dt 200a/s, v dclink =400v, v peak |