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| general description silicon pnp high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose quick reference data limiting values symbol parameter conditions typ max unit v c e s m collector-emitter voltage peak value v be = 0v - 120 v v c e o collector-emitter voltage (open base) - 120 v i c collector current (dc) - 8 a i c m collector current pea k va lue - a p t o t total power dissipation t m b
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