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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC5197 description low collector saturation voltage- : v ce(sat) = 2.0v(min) @i c = 6a good linearity of h fe complement to type 2sa1940 applications power amplifier applications recommend for 55w high fidelity audio frequency amplifier output stage applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 5 v i c collector current-continuous 8 a i b b base current-continuous 0.8 a p c collector power dissipation @ t c =25 80 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC5197 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma ; i b = 0 120 v v ce (sat) collector-emitter saturation voltage i c = 6a; i b = 0.6a b 2.0 v v be( on ) base-emitter on voltage i c = 4a ; v ce = 5v 1.5 v i cbo collector cutoff current v cb = 120v ; i e = 0 5 a i ebo emitter cutoff current v eb = 5v; i c = 0 5 a h fe-1 dc current gain i c = 1a ; v ce = 5v 55 160 h fe-2 dc current gain i c = 4a ; v ce = 5v 35 c ob output capacitance i e = 0; v cb = 10v;f test = 1.0mhz 120 pf f t current-gain?bandwidth product i c = 1a ; v ce = 5v 30 mhz ? h fe- 1 classifications r o 55-110 80-160 isc website www.iscsemi.cn 2 inchange semiconductor isc product specification isc silicon npn power transistor 2SC5197 isc website www.iscsemi.cn |
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