9/3/2013 schematic first sensor apd hybrid series data sheet part description ad500-1.3g-to5 us order # 05-006 international order # 500003 pin circle active area: 0.196 mm (500 m diameter) pin 2 pin 1 5 pl ? 0.46 4.2 1 2 pin 4 pin 3 ?5.08 v backside view 113 viewing angle ?6.60 ?8.3 2.2 7.6 min chip dimensions pin 5 case/ gnd 5 pl cc v out+ v out- +v bias 1.00 sq ?9.2 features description applications ? ? 0.500 mm active area ? low noise ? high gain ? long term stability the ad500-1.3g-to5 is an avalanche photodiode ampli fier hybrid containing a 0.196 mm 2 active area apd chip integrated with an internal 1.3 ghz amplifier. hermetically pa ckaged in a to-5 with a borosilicate glass window cap. ? precision photometry ? analytical instruments ? medical equipment ? low light sensor absolute maximum rating spectral response at m = 100 symbol parameter min max units t stg storage temp -55 +125 c t op operating temp 0 +60 c t soldering soldering temp - +240 c p power dissipation - 360 mw v cc single supply voltage +3.0 +5.5 v i cc supply current - 63 ma electro-optical characteristics @ 22 c (v cc = single supply +3.3v, r l = 100 w unless otherwise specified) symbol characteristic test conditions min typ max units ? - 3db frequency response -3db @ 800 nm --- 1.3 --- ghz s sensitivity* = 800 nm; m = 100 --- 100 --- kv/w i cc supply current dark state --- 34 63 ma * sensitivity = apd responsivity (0.45 a/w x 100 g ain) x tia gain (2.5k) these devices are sensitive to electrostatic discha rge. please use esd precautions when handling. disclaimer: due to our policy of continued develop ment, specifications are subject to change without notice. 400 500 600 700 800 900 1000 1100 wavelength (nm) responsivity (a/w) 0 10 20 30 40 50 60 pin 2 c1 c2 +v pin 3 bias pin 1 out+ out- pin 4 case/gnd pin 5 cc (+5v) v ad230-8 h o r s c o m p l i a n t
9/3/2013 avalanche photodiode data @ 22 c symbol characteristic test conditions min typ max units i d dark current m = 100 (see note 2) --- 0.5 2.0 na c capacitance m = 100 (see note 2) --- 2.2 --- pf v br breakdown voltage (see note 1) i d = 2 a 80 --- 200 v temperature coefficient of v br 0.35 0.45 0.55 v/k responsivity m = 100; = 0 v; = 800 nm 45 50 --- a/w ?? 3db bandwidth -3db --- 1.0 --- ghz t r rise time --- 350 --- ps optimum gain 50 60 --- ?excess noise? factor m = 100 --- 2.2 --- ?excess noise? index m = 100 --- 0.2 --- noise current m = 100 --- 1.0 --- pa/hz 1/2 max gain 200 --- --- nep noise equivalent power m = 100; = 800 nm --- 2.0 x 10 - 14 --- w/hz 1/2 note 1: different breakdown voltage ranges are avai lable: p/n 50000303 (80 ? 120 v), 50000301 (120 ? 1 60 v), 50000302 (160 ? 200 v). note 2: measurement conditions: setup of photo cur rent 1.0 na at m = 1 and irradiated by a 680 nm, 60 nm bandwidth led. increase the photo current up to 1 a, (m = 100) by internal mul tiplication due to an increasing bias voltage. transimpedance amplifier data @ 25 c (v cc = +3.0 v to +5.5 v, t a = 0c to 70c, 100 load between out+ and out-. typical values are at t a = 25c, vcc = +3.3 v) par ameter test conditions min typ max units supply voltage 3 5 6 v supply current --- 34 63 ma transimpedance differential, measured with 40 a p- p signal 2.10 2.75 3.40 k output impedance single ended per side 48 50 52 maximum differential output voltage input = 1 ma p- p 220 380 575 mv p-p ac input overload 2 --- --- ma p-p dc input overload 1 --- --- ma input referred rms noise to-5 package, see note 4 --- 490 668 na input referred noise density see note 4 --- 11 --- pa/hz 1/2 small signal bandwidth source capacitance = 0.85 pf , see note 3 1.525 2.00 --- ghz low frequency cutoff -3 db, input < 20 a dc --- 30 --- khz transimpedance linear range gain at 40 a p-p is wi thin 5% of the small signal gain 40 --- --- a p-p power supply rejection ratio (psrr) output referred, f < 2 mhz, pssr = -20 log ( vout / vcc) --- 50 --- db note 3: source capacitance for ad500-1.3g-to5 is th e capacitance of apd. note 4: input referred noise is calculated as rms o utput noise/ (gain at f = 10 mhz). noise density is (input referred noise)/ bandwidth. transfer characteristics the circuit used is an avalanche photodiode directl y coupled to a high speed data handling transimpedance amplif ier. the output of the apd (light generated current) is applied to the input o f the amplifier. the amplifier output is in the for m of a differential voltage pulsed signal. the apd responsivity curve is provided in fig. 2. t he term amps/watt involves the area of the apd and can be expressed as amps/mm 2 /watts/mm 2 , where the numerator applies to the current genera ted divided by the area of the detector, the denomi nator refers to the power of the radiant energy present per unit area. as an example assume a radiant input of 1 microwatt at 850 nm. the apd?s corresponding responsivity is 0.4 a/w. if energy in = 1 w, then the current from the apd = (0.4 a/w) x (1 x 10 -6 w) = 0.4 a. we can then factor in the typical gain of the apd of 100, making the input current to the am plifier 40 a. from fig. 5 we can see the amplifier output will be approximately 75 mv p-p. application notes the ad500-1.3g-to5 is a high speed optical data rec eiver. it incorporates an internal transimpedance a mplifier with an avalanche photodiode. this detector requires +3.5 v to +5.0 v voltage sup ply for the amplifier and a high voltage supply (10 0-200 v) for the apd. the internal apd follows the gain curve published for the ad500-8-to 52-s1 avalanche photodiode. the transimpedance ampl ifier provides differential output signals in the range of 200 millivolts differential . in order to achieve highest gain, the avalanche pho todiode needs a positive bias voltage (fig. 1). how ever, a current limiting resistor must be placed in series with the photodiode bias voltage t o limit the current into the transimpedance amplifi er. failure to limit this current may result in permanent failure of the device. the suggested initial value for this limiting resi stor is 390 kohm. when using this receiver, good high frequency place ment and routing techniques should be followed in o rder to achieve maximum frequency response. this includes the use of bypass capacitor s, short leads and careful attention to impedance m atching. the large gain bandwidth values of this device also demand that good shieldi ng practices be used to avoid parasitic oscillation s and reduce output noise.
9/3/2013 fig. 1: apd gain vs bias voltage fig. 2: apd spectral response ( m = 1) 130 135 140 145 150 155 160 165 170 1 10 100 1000 applied voltage (v) gain 400 500 600 700 800 900 1000 1100 wavelength (nm) responsivity (a/w) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 fig. 3 : amplifier output vs temperature fig.4 : apd capacitance vs voltage -40 300 am bient tem perature (c) differential output amplitude (mv p-p) -20 40 60 100 320 340 360 380 400 420 440 460 0 20 80 0 10 20 30 40 50 60 70 80 90 100 40 35 30 25 20 15 10 50 breakdow n voltage (vbr) junction capacitance (pf) fig. 5: amplifier transfer function fig. 6: total frequency response -100 -200 -100 -50 50 100 150 200 -75 0 -50 -25 25 50 75 100 input current (a) differential output voltage (mv p-p) 0 -150 50 55 60 65 70 75 transimpedance (db) 1m 10m 100m 1g 10g frequency (hz) usa: first sensor, inc. 5700 corsa avenue, #105 westlake village, ca 91362 usa t + 818 706-3400 f + 818 889-7053 contact.us@first-sensor.com www.first-sensor.com international sales: first sensor ag peter-behrens-str. 15 12459 berlin, germany t + 49 30 6399 2399 f + 49 30 639923-752 sales.opto@first-sensor.com www.first-sensor.com
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