maximum ratings (t a =25c) symbol units collector-base voltage v cbo 140 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 7.0 v collector current i c 1.0 a collector current (peak) i cm 1.5 a power dissipation p d 1.2 w operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 104 c/w electrical characteristics (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =90v 10 na i ebo v eb =5.0v 10 na bv cbo i c =100 a 140 v bv ceo i c =30ma 80 v bv ebo i e =100 a 7.0 v v ce(sat) i c =150ma, i b =15ma 0.2 v v ce(sat) i c =500ma, i b =50ma 0.5 v v be(sat) i c =150ma, i b =15ma 1.1 v h fe v ce =10v, i c =0.1ma 50 h fe v ce =10v, i c =10ma 90 h fe v ce =10v, i c =150ma 100 300 h fe v ce =10v, i c =500ma 50 h fe v ce =10v, i c =1.0a 15 CXT3019 surface mount npn silicon transistors sot-89 case central semiconductor corp. tm r3 ( 20-december 2001) description: the central semiconductor CXT3019 type is an npn silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications.
a c e g f h j k m l b r3 1 3 2 central semiconductor corp. tm sot-89 case - mechanical outline CXT3019 surface mount npn silicon transistors r3 ( 20-december 2001) lead code: 1) emitter 2) collector 3) base electrical characteristics (continued) symbol test conditions min max units f t v ce =10v, i c =50ma, f=1.0mhz 100 mhz c ob v cb =10v, i e =0, f=1.0mhz 12 pf c ib v eb =0.5v, i c =0, f=1.0mhz 60 pf nf v ce =10v, i c =100 a, r s =1k ? , f=1.0khz 4.0 db bottom view
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